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UCC21231

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High-speed dual-channel isolated gate driver with 4A source and 6A sink

Product details

Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2000 Transient isolation voltage (VIOTM) (VPK) 2500 Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
Number of channels 2 Isolation rating Functional Withstand isolation voltage (VISO) (Vrms) 2000 Transient isolation voltage (VIOTM) (VPK) 2500 Power switch GaNFET, MOSFET Features Enable, High CMTI, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 6.5 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Capable Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5
WSON (DLG) 13 16 mm² 4 x 4
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Up to 4A peak source and 6A peak sink output
  • 1.6KVRMS basic isolation rating.
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • Up to 25V VDD output drive supply with 5V VDD UVLO protection
  • UVLO protection for all power supplies
  • Fast enable for power sequencing
  • 4×4mm SON package with >1.2mm spacing:

    • Thermal PAD under each channel
    • 14.1°C/W RƟJB

  • Junction temperature range –40 to +150°C

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21231 is an isolated dual-channel gate driver family with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. UCC21231 is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, and GaN transistors.

The UCC21231 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 1.6kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, enable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.

The UCC21231 device accepts VDD supply voltages up to 25V. An input VCCI range from 3V to 5.5V makes the driver suitable for interfacing with digital controllers. All supply voltage pins have undervoltage lock-out (UVLO) protection.

With all these advanced features, the UCC21231 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

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Technical documentation

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Type Title Date
* Data sheet UCC21231 4A Source, 6A Sink, High-Speed, Dual-Channel Isolated Gate Driver in Low-Profile SON Package datasheet PDF | HTML 15 Apr 2024
EVM User's guide UCC21231AEVM-108 Evaluation Module User's Guide PDF | HTML 26 Apr 2024

Design & development

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Evaluation board

UCC21231AEVM-108 — UCC21231A evaluation module

The UCC21231AEVM-108 is designed for evaluating the UCC21231A gate driver. The UCC21231A is a 1.6kVrms isolated dual-channel gate driver with 4A source and 6A sink peak current for driving Si MOSFETs, IGBTs and WBG devices such as SiC and GaN transistors. This user's guide provides a complete (...)
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PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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WSON (DLG) 13 View options

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