Gate drivers
Efficiently and reliably drive any power switch at any power level for any application
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Automotive low-side 3A/3A driver with desaturation protection and 12V undervoltage lockout
Approx. price (USD) 1ku | 0.55
120V 4A half-bridge driver with 8V UVLO and enable
Approx. price (USD) 1ku | 0.65
High-speed dual-channel isolated gate driver with 4A source and 6A sink
Approx. price (USD) 1ku | 1.217
Low-side 3A/3A driver with desaturation protection (DESAT) and 12V undervoltage lockout (UVLO)
Approx. price (USD) 1ku | 0.55
Automotive 120V 4A half-bridge gate driver with 8V UVLO and enable
Approx. price (USD) 1ku | 0.65
3kVRMS 4A/6A two-channel gate driver with enable logic and programmable deadtime
Approx. price (USD) 1ku | 0.44
Wide band-gap technologies
High-speed GaN gate drivers enabling high power density and design simplicity for every topology
The combination of fast timing specifications, leadless packages and narrow pulse-width response of our drivers enable you to switch FETs fast. Added features like gate-voltage regulation, programmable dead time and low internal power consumption make sure that high-frequency switching yields the highest efficiency possible.
GaN and SiC technologies enable increased efficiency in power supplies
An Introduction to Automotive LIDAR (Rev. B)
Optimizing multi-megahertz GaN driver design white paper (Rev. A)
Silicon carbide (SiC) gate drivers for energy-efficient, robust and compact system design
Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC and IGBT gate drivers. Our SiC gate drivers help you achieve robust isolation in your system with fast integrated short-circuit protection and high surge immunity. Reduce your system size, weight and cost by switching SiC at higher PWM frequencies with our fast, robust and reliable drivers.
IGBT & SiC Gate Driver Fundamentals
Silicon carbide gate drivers -- a disruptive technology in power electronics (Rev. A)
Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C)
Technical resources
Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A)
Gate Driver Frequently Asked Questions (FAQs)
Impact of an isolated gate driver (Rev. A)
Design & development resources
Power stage reference design for <100-VIN DC/DC converters
Three-phase inverter reference design for 200-480 VAC drives with opto-emulated input gate drivers
480W, <17 mm, Thin Profile, 94% Efficiency, Fast Transient Response AC/DC SMPS Reference Design
The TIDA-01495 is a low profile (17 mm height), 94.1% peak efficiency, high power density, universal input, 24-V DC, 480-W output, consumer AC/DC power supply reference design. The circuit consists of a front-end two phase interleaved transition mode (TM) power factor correction (PFC) based on the (...)