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LM5112

ACTIVE

3-A/7-A single channel gate driver with 4-V UVLO and input ground for split-supply operation

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Data sheet

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UCC27614 ACTIVE 10-A/10-A single-channel gate driver with 4-V UVLO, 30-V VDD and low prop delay Wide VDD and smaller package

LM5112

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 WSON (NGG) 6 9 mm² 3 x 3
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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Technical documentation

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Type Title Date
* Data sheet LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver datasheet (Rev. C) PDF | HTML 22 Oct 2015
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Application note An Alternative Approach to Higher-Power Boost Converters 30 Nov 2009

Design & development

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Evaluation board

UCC27423-4-5-Q1EVM — UCC2742xQ1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable Evaluation Module (EVM)

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
User guide: PDF
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Simulation model

LM5112 PSpice Transient Model

SNVM300.ZIP (73 KB) - PSpice Model
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Simulation model

LM5112 TINA-TI Transient Reference Design

SNVM391.TSC (579 KB) - TINA-TI Reference Design
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Simulation model

LM5112 TINA-TI Transient Spice Model

SNVM390.ZIP (8 KB) - TINA-TI Spice Model
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Simulation model

LM5112 Unencrypted PSpice Transient Model

SNVMAD6.ZIP (1 KB) - PSpice Model
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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HVSSOP (DGN) 8 Ultra Librarian
WSON (NGG) 6 Ultra Librarian
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