TLV2314-Q1

ACTIVE

Automotive-grade, dual, 5.5-V, 3-MHz, RRIO operational amplifier

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TSV912A-Q1 ACTIVE Automotive-grade, dual, 5.5-V, 8-MHz, RRIO operational amplifier Higher GBW (8 MHz), faster slew rate (6.5 V/us), lower offset voltage (1.5 mV), higher output current (50 mA)

Product details

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 1.5 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.15 Vn at 1 kHz (typ) (nV√Hz) 16 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 96 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0 Output swing headroom (to positive supply) (typ) (V) -0.025
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 1.8 Rail-to-rail In, Out GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 1.5 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.15 Vn at 1 kHz (typ) (nV√Hz) 16 Rating Automotive Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened CMRR (typ) (dB) 96 Iout (typ) (A) 0.02 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0 Output swing headroom (to positive supply) (typ) (V) -0.025
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Low Offset Voltage: 0.75 mV (Typical)
  • Low Input Bias Current: 1 pA (Typical)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Rail-to-Rail Input and Output
  • Gain Bandwidth: 3 MHz
  • Low IQ: 250 µA/Ch (Maximum)
  • Low Noise: 16 nV/√Hz at 1 kHz
  • Internal RF and EMI Filter
  • Number of Channels:
    • TLV314-Q1: 1
    • TLV2314-Q1: 2
    • TLV4314-Q1: 4
  • Extended Temperature Range:
    –40°C to +125°C
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • Low Offset Voltage: 0.75 mV (Typical)
  • Low Input Bias Current: 1 pA (Typical)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Rail-to-Rail Input and Output
  • Gain Bandwidth: 3 MHz
  • Low IQ: 250 µA/Ch (Maximum)
  • Low Noise: 16 nV/√Hz at 1 kHz
  • Internal RF and EMI Filter
  • Number of Channels:
    • TLV314-Q1: 1
    • TLV2314-Q1: 2
    • TLV4314-Q1: 4
  • Extended Temperature Range:
    –40°C to +125°C

The TLVx314-Q1 family of single-, dual-, and quad-channel operational amplifiers represents a new generation of low-power, general-purpose operational amplifiers. Rail-to-rail input and output swings (RRIO), low quiescent current (150 µA typically at 5 V) combine with a wide bandwidth of 3 MHz to make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The TLVx314-Q1 family achieves a low-input bias current of 1 pA, making it an excellent choice for high impedance sensors.

The robust design of the TLVx314-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability, RRIO, capacitive loads of up to 300-pF, an integrated RF and EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended industrial temperature range of –40°C to +125°C.

The TLV314-Q1 (single) is available in both 5-pin SC70 and SOT-23 packages. The TLV2314-Q1 (dual) is offered in 8-pin SOIC and VSSOP packages. The quad-channel TLV4314-Q1 is offered in a 14-pin TSSOP package.

The TLVx314-Q1 family of single-, dual-, and quad-channel operational amplifiers represents a new generation of low-power, general-purpose operational amplifiers. Rail-to-rail input and output swings (RRIO), low quiescent current (150 µA typically at 5 V) combine with a wide bandwidth of 3 MHz to make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. The TLVx314-Q1 family achieves a low-input bias current of 1 pA, making it an excellent choice for high impedance sensors.

The robust design of the TLVx314-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability, RRIO, capacitive loads of up to 300-pF, an integrated RF and EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended industrial temperature range of –40°C to +125°C.

The TLV314-Q1 (single) is available in both 5-pin SC70 and SOT-23 packages. The TLV2314-Q1 (dual) is offered in 8-pin SOIC and VSSOP packages. The quad-channel TLV4314-Q1 is offered in a 14-pin TSSOP package.

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* Data sheet TLVx314-Q1 3-MHz, low-power, internal EMI filter, RRIO, operational amplifier datasheet (Rev. A) PDF | HTML 22 Jan 2019
Functional safety information TLV2314-Q1 Functional Safety FIT Rate, FMD, and Pin FMA PDF | HTML 03 Sep 2020
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 Mar 2017

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