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UCC27519A-Q1

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Automotive 4-A/4-A single-channel gate driver with 5-V UVLO, enable, and CMOS input

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Data sheet

UCC27519A-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 7 Propagation delay time (µs) 0.017 Input threshold CMOS Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Non-Inverting
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 4 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Enable pin Operating temperature range (°C) -40 to 125 Rise time (ns) 8 Fall time (ns) 7 Propagation delay time (µs) 0.017 Input threshold CMOS Channel input logic Non-Inverting Input negative voltage (V) -5 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Non-Inverting
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to +125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • Pin-to-Pin Compatible With TI’s TPSS2828-Q1
    and the TPS2829-Q1
  • 4-A Peak Source and 4-A Peak Sink Symmetrical
    Drive
  • Fast Propagation Delays (17-ns typical)
  • Fast Rise and Fall Times (8-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power-Up and Power-
    Down)
  • CMOS Input Logic Threshold (Function of Supply
    Voltage With Hysteresis)
  • Hysteretic Logic Thresholds for High Noise
    Immunity
  • EN Pin for Enable Function (Allowed to be no
    Connect)
  • Ability to Support Negative Voltages (–5 V) at
    Input and Enable pins
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV Package (SOT-23)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Automotive Qualified Grade 1: –40°C
      to +125°C Ambient Operating Temperature
      Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • Pin-to-Pin Compatible With TI’s TPSS2828-Q1
    and the TPS2829-Q1
  • 4-A Peak Source and 4-A Peak Sink Symmetrical
    Drive
  • Fast Propagation Delays (17-ns typical)
  • Fast Rise and Fall Times (8-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power-Up and Power-
    Down)
  • CMOS Input Logic Threshold (Function of Supply
    Voltage With Hysteresis)
  • Hysteretic Logic Thresholds for High Noise
    Immunity
  • EN Pin for Enable Function (Allowed to be no
    Connect)
  • Ability to Support Negative Voltages (–5 V) at
    Input and Enable pins
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C to 140°C
  • 5-Pin DBV Package (SOT-23)

The UCC2751xA-Q1 single-channel high-speed low-side gate driver devices effectively drive MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC2751xA-Q1 family of devices sources and sinks high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.

The UCC2751xA-Q1 family of devices provides 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC2751xA-Q1 family of devices operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power-semiconductor devices.

The input pin threshold of the UCC2751xA-Q1 family of devices is based on CMOS logic where the threshold voltage is a function of the VDD supply voltage. Typically, the input high threshold (VIN–H) is 55% VDD and the input low threshold (VIN–L) is 39% VDD. Wide hysteresis (16% VDD typically) between the high and low thresholds offers excellent noise immunity and allows users to introduce delays using RC circuits between the input PWM signal and the INx pin of the device.

The UCC2751xA-Q1 family of devices also features a floatable enable function on the EN pin. The EN pin can be left in a no-connect condition, which allows pin-to-pin compatibility between the UCC2751xA-Q1 family of devices and the TPS2828-Q1 or TPS2829-Q1 device, respectively. The enable pin threshold is a fixed voltage threshold and does not vary based on VDD pin bias voltage. Typically, the enable high threshold (VEN-H) is 2.1 V and the enable low threshold (VEN-L) is 1.25 V.

The UCC2751xA-Q1 single-channel high-speed low-side gate driver devices effectively drive MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC2751xA-Q1 family of devices sources and sinks high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.

The UCC2751xA-Q1 family of devices provides 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC2751xA-Q1 family of devices operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power-semiconductor devices.

The input pin threshold of the UCC2751xA-Q1 family of devices is based on CMOS logic where the threshold voltage is a function of the VDD supply voltage. Typically, the input high threshold (VIN–H) is 55% VDD and the input low threshold (VIN–L) is 39% VDD. Wide hysteresis (16% VDD typically) between the high and low thresholds offers excellent noise immunity and allows users to introduce delays using RC circuits between the input PWM signal and the INx pin of the device.

The UCC2751xA-Q1 family of devices also features a floatable enable function on the EN pin. The EN pin can be left in a no-connect condition, which allows pin-to-pin compatibility between the UCC2751xA-Q1 family of devices and the TPS2828-Q1 or TPS2829-Q1 device, respectively. The enable pin threshold is a fixed voltage threshold and does not vary based on VDD pin bias voltage. Typically, the enable high threshold (VEN-H) is 2.1 V and the enable low threshold (VEN-L) is 1.25 V.
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Type Title Date
* Data sheet UCC2751xA-Q1 Single-Channel High-Speed Low-Side Gate Driver With Negative Input Voltage Capability datasheet (Rev. B) PDF | HTML 31 Aug 2014
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Functional safety information UCC27517A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 16 Jun 2021
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018

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