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Gallium nitride (GaN) power stages

LMG3411R070

ACTIVE

600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

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Data sheet

LMG3411R070

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 600 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VDS (max) (V) 600 RDS(on) (mΩ) 70 ID (max) (A) 12 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 150
VQFN (RWH) 32 64 mm² 8 x 8
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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Technical documentation

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Type Title Date
* Data sheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) PDF | HTML 06 Apr 2020
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU，實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020
Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) 04 Aug 2020
Application note Third quadrant operation of GaN 25 Feb 2019
Technical article Gallium nitride: supporting applications from watts to kilowatts PDF | HTML 19 Dec 2018
EVM User's guide Using the LMG3411R070EVM Half-Bridge and LMG34XXBB-EVM Breakout Board EVM 24 Oct 2018
Application brief Overcurrent Protection in High-Density GaN Power Designs 19 Oct 2018
More literature Product-level Reliability of GaN Devices 26 Apr 2016
White paper Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN 31 Mar 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

User guide: PDF
Not available on TI.com
Daughter card

LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
User guide: PDF
Not available on TI.com
Daughter card

LMG3411EVM-029 — LMG3411R070 600-V 70-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

LMG3411EVM-029 configures two LMG3411R070 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.
User guide: PDF
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG2100R026 — 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage LMG2100R044 — 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 — 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG2640 — 650V 105mΩ GaN half-bridge with integrated driver, protection and current sense LMG2650 — 650V 95mΩ GaN half-bridge with integrated driver, protection and current sense LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 — 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3426R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3426R050 — 600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3427R030 — 600V 30mΩ GaN FET with integrated driver, protection and zero-current detection LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG3526R050 — 650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting LMG5200 — 80V GaN Half Bridge Power Stage
Download
Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3410R050 — 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 — 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 — 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 — 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 — 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 — 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 — 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 — Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 — 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
Download
Reference designs

PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design

Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP21309 — 24-V/500-W resonant converter reference design with HV GaN FET

This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP21842 — 12-V/500-W resonant converter reference design with HV GaN FET

This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
Test report: PDF
Schematic: PDF
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VQFN (RWH) 32 Ultra Librarian
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