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TS5A23159

ACTIVE

1-Ω on-state resistance, 5-V, 2:1 (SPDT), 2-channel analog switch with powered-off protection

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Data sheet

TS5A23159

ACTIVE
Data sheet Order now

Product details

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 54.5 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 105 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 54.5 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 105 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
UQFN (RSE) 10 3 mm² 2 x 1.5 VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • Isolation in Power-Down Mode, VCC = 0
  • Specified Break-Before-Make Switching
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • Supports Analog and Digital Signals
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Isolation in Power-Down Mode, VCC = 0
  • Specified Break-Before-Make Switching
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • Supports Analog and Digital Signals
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

The TS5A23159 is a bidirectional 2-channel single-pole double-throw (SPDT) switch that is designed to operate from 1.65 V to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the break-before-make feature which prevents signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for a wide variety of portable applications including cell phones, audio devices, and instrumentation.

The TS5A23159 is a bidirectional 2-channel single-pole double-throw (SPDT) switch that is designed to operate from 1.65 V to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the break-before-make feature which prevents signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for a wide variety of portable applications including cell phones, audio devices, and instrumentation.
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Type Title Date
* Data sheet TS5A23159 1-Ω 2-Channel SPDT Analog Switch 5-V / 3.3-V 2-Channel 2:1 Multiplexer / Demultiplexer datasheet (Rev. H) PDF | HTML 26 Feb 2015
Product overview How to Support Two Controllers on the I2C Bus, Avoid Bus Contention, and Prevent Controller Failures PDF | HTML 27 Nov 2024
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design & development

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The EVM-LEADLESS1 board allows for quick testing and bread boarding of TI's common leadless packages.  The board has footprints to convert TI's DRC, DTP, DQE, RBW, RGY, RSE, RSV, RSW RTE, RTJ, RUK , RUC, RUG, RUM,RUT and YZP surface mount packages to 100mil DIP headers.
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Reference designs

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Schematic: PDF
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UQFN (RSE) 10 Ultra Librarian
VSSOP (DGS) 10 Ultra Librarian
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