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UC2705

ACTIVE

1.5-A/1.5-A dual-channel gate driver with 40-V VDD and 40-ns fall time, in 8-pin packages

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Data sheet

UC2705

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Thermal shutdown Operating temperature range (°C) -40 to 85 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Complementary
Number of channels 1 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Thermal shutdown Operating temperature range (°C) -40 to 85 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Complementary
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • 1.5 A Source/Sink Drive
  • 100 nsec Delay
  • 40 nsec Rise Fall into 1000 pF
  • Inverting and Non-Inverting Inputs
  • Low Cross-Conduction Current Spike
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • Minidip and Power Packages
  • 1.5 A Source/Sink Drive
  • 100 nsec Delay
  • 40 nsec Rise Fall into 1000 pF
  • Inverting and Non-Inverting Inputs
  • Low Cross-Conduction Current Spike
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • Minidip and Power Packages

The UC1705 family of power drivers is made with a high sppeed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices are also an optimum choise for capacitive line drivers where up to 1.5 A may be switched in either direction. With both inverting and non-inverting inputs available, logic signals of either polarity may be accepted, or one input can be used to gate or strobe the other.

Supply voltages for both VS and VC can independently range from 5 V to 40 V. For additional application details, see the UC1707/3707 data sheet (SLUS177).

The UC1705 is packaged in an 8-pin hermetically sealed CERDIP for -55°C to 125°C operation. The UC3705 is specified for a temperature range of 0°C to 70°C and is available in either a plastic minidip or a 5-pin, power
TO-220 package.

The UC1705 family of power drivers is made with a high sppeed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices are also an optimum choise for capacitive line drivers where up to 1.5 A may be switched in either direction. With both inverting and non-inverting inputs available, logic signals of either polarity may be accepted, or one input can be used to gate or strobe the other.

Supply voltages for both VS and VC can independently range from 5 V to 40 V. For additional application details, see the UC1707/3707 data sheet (SLUS177).

The UC1705 is packaged in an 8-pin hermetically sealed CERDIP for -55°C to 125°C operation. The UC3705 is specified for a temperature range of 0°C to 70°C and is available in either a plastic minidip or a 5-pin, power
TO-220 package.
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Technical documentation

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Type Title Date
* Data sheet High Speed Power Driver datasheet (Rev. D) 08 Mar 2012
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Application note U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 05 Sep 1999
Application note U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 05 Sep 1999

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