Entwickeln Sie effizientere, kompaktere Motorsysteme mit dem DRV7308 GaN-IPM
Entwickeln Sie kleinere, leisere und effizientere Motorantriebssysteme mit unserem DRV7308, dem branchenweit ersten integrierten intelligenten GaN-Leistungsmodul (IPM) für Motorantriebsanwendungen von 150 W bis 250 W. Dieser IPM bietet eine hohe Leistungsdichte in einem 12 mm x 12 mm großen Gehäuse und macht einen externen Kühlkörper überflüssig. Im Vergleich zu IPM-Lösungen des Wettbewerbs reduziert der DRV7308 die Größe der Leiterplatte (PCB) des Motorantriebsinverters um bis zu 55 %.
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Quieter and smaller, our GaN technology helps you design for efficiency and reliability. At TI, we find ways to help you optimize performance. Introducing the industry's first GaN intelligent power module, the DRV7308. This three-phase, brushless DC motor driver has integrated 650 volt GaN FETs.
Now, you can achieve more than 99% inverter efficiency, obtain ultra-quiet performance, eliminate the need for a heat sink, extend motor drive lifetimes, and improve system reliability. All in a small 12-by-12 millimeter QFN package. Applications include home appliances, such as washing machines, dishwasher pumps, refrigerator compressors, ceiling fans, air conditioner fans, and for industrial environments, HVAC blowers and factory motor drives. Power levels range from 20 to 350 watts, with an absolute maximum voltage of 650 volts.
What TI's GaN technology, you can shrink your board from a conventional IGBT solution. When compared to MOSFETs and IGBTs, TI's GaN IPM can help you achieve reductions in size and power losses that translate into big savings, whether you're needing to meet energy standards or reduce motor costs for system efficiency.
Our GaN IPM enables a 50% reduction in power loss with zero reverse recovery, low output capacitance, no turn off tail current as in IGBTs, optimized slew rate with integrated slew rate control, and low drain to source on resistance. Our new GaN IPM also enables ultra-quiet operation with reduced harmonics, by lowering dead time and propagation delay to less than 200 nanoseconds. These improvements are in comparison to existing IGBT and MOSFET solutions that have more than 1 microsecond of dead time and more than 500 nanoseconds of propagation delay.
With optimized switching losses, TI's new GaN IPM enables switching frequencies of more than 15 kilohertz with three-phase modulation. Learn more about how you can achieve 99% motor efficiency and optimize your system solution with the DRV7308 at ti.com/drv7308.
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