SCES888C May   2018  – May 2024 2N7001T

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Operating Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Load Circuit and Voltage Waveforms
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Up-Translation or Down-Translation from 1.65 V to 3.60 V
      2. 7.3.2 Balanced CMOS Push-Pull Outputs
      3. 7.3.3 Standard CMOS Inputs
      4. 7.3.4 Negative Clamping Diodes
      5. 7.3.5 Partial Power Down (Ioff)
      6. 7.3.6 Over-voltage Tolerant Inputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Processor Error Up Translation
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Discrete FET Translation Replacement
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2 Discrete FET Translation Replacement

The 2N7001T device is an excellent option for replacing discrete translators, as shown in Figure 8-3, and has the following benefits regarding discrete translation implementations:

  • A single device vs a four component solution
  • Minimized implementation size
  • Lower power consumption
  • VCC isolation feature
  • Higher data rates
  • Integrated ESD protection
  • Improved glitch performance

2N7001T Discrete Translation vs. 2N7001T SolutionFigure 8-3 Discrete Translation vs. 2N7001T Solution