5 Specifications
5.1 Absolute Maximum Ratings
over operating case temperature range (unless otherwise noted)(1)
Supply voltage(2): |
CVDD |
–0.3 V to 1.3 V |
CVDD1 |
–0.3 V to 1.3 V |
CVDDT1 |
–0.3 V to 1.3 V |
DVDD15 |
–0.3 V to 1.98 V |
DVDD18 |
–0.3 V to 2.45 V |
DVDD33 |
–0.3V to 3.63 V |
DDR3VREFSSTL |
0.49 × DVDD15 to 0.51 × DVDD15 |
VDDAHV |
–0.3 V to 1.98 V |
VDDALV |
–0.3 V to 0.935 V |
VDDUSB |
–0.3V to 0.935 V |
AVDDA1, AVDDA2, AVDDA3,AVDDA4, AVDDA5 |
–0.3 V to 1.98 V |
AVDDA6, AVDDA7, AVDDA8, AVDDA9, AVDDA10, AVDDA11, AVDDA12, AVDDA13, AVDDA14, AVDDA15 |
–0.3 V to 1.98 V |
VSS Ground |
0 V |
Input voltage (VI):(3) |
LVCMOS (1.8 V) |
–0.3 V to DVDD18+0.3 V |
DDR3A, DDR3B |
–0.3 V to 1.98 V |
I2C |
–0.3 V to 2.45 V |
LVDS |
–0.3 V to DVDD18+0.3 V |
LJCB |
–0.3 V to 1.3 V |
SerDes |
–0.3 V to VDDAHV1+0.3 V |
Output voltage (VO):(3) |
LVCMOS (1.8 V) |
–0.3 V to DVDD18+0.3 V |
DDR3A, DDR3B |
–0.3 V to 1.98 V |
I2C |
–0.3 V to 2.45 V |
SerDes |
–0.3 V to VDDAHV+0.3 V |
Operating case temperature, TC: |
Commercial |
0°C to 85°C |
Extended |
–40°C to 100°C |
Overshoot/undershoot (4) |
LVCMOS (1.8 V) |
20% overshoot/undershoot for 20% of signal duty cycle |
DDR3A, DDR3B |
I2C |
Storage temperature, Tstg: |
–65°C to 150°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS.
(3) For USB High-Speed, Full-Speed, and Low -Speed modes, USB I/Os adhere to Universal Serial Bus, revision 2.0 standard. For USB Super-Speed mode, USB I/Os adhere to Universal Serial Bus, revision 3.1 specification, revision 1.0 standard.
(4) Overshoot/Undershoot percentage relative to I/O operating values - for example the maximum overshoot value for 1.8 V LVCMOS signals is DVDD18 + 0.20 × DVDD18 and maximum undershoot value would be VSS - 0.20 × DVDD18
5.2 ESD Ratings
|
VALUE |
UNIT |
VESD |
Electrostatic discharge (ESD) |
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±1000 |
V |
Charged device model (CDM), per JESD22-C101(2) |
±250 |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
(1)(2)
|
MIN |
NOM |
MAX |
UNIT |
CVDD |
SR DSP core supply |
Initial (3) |
0.95 |
1.0 |
1.05 |
V |
1000-MHz device |
SRVnom*0.95 (4) |
SRVnom |
SRVnom*1.05 |
V |
1200-MHz device |
SRVnom*0.95 (4) |
SRVnom |
SRVnom*1.05 |
V |
CVDD1 |
DSP core supply |
|
|
0.902 |
0.95 |
0.997 |
V |
CVDDT1 |
Cortex-A15 processor core supply |
0.902 |
0.95 |
0.997 |
V |
DVDD18 |
1.8-V supply I/O voltage |
|
1.71 |
1.8 |
1.89 |
V |
DVDD15 |
DDR3 I/O voltage |
DDR3 |
1.425 |
1.5 |
1.575 |
V |
DDR3L at 1.5 V |
1.425 |
1.5 |
1.575 |
DDR3L at 1.35 V |
1.283 |
1.35 |
1.45 |
DDR3VREFSSTL |
DDR3A, DDR3B reference voltage |
|
0.49 × DVDD15 |
0.5 × DVDD15 |
0.51 × DVDD15 |
V |
VDDAHV |
SerDes regulator supply |
|
1.71 |
1.8 |
1.89 |
V |
AVDDx (5) |
PLL analog, DDR DLL supply |
|
1.71 |
1.8 |
1.89 |
V |
VDDALH |
SerDes termination supply |
|
0.807 |
0.85 |
0.892 |
V |
DVDD33 |
USB |
|
|
3.135 |
3.3 |
3.465 |
V |
VDDUSB |
USB |
|
|
0.807 |
0.85 |
0.892 |
V |
VSS |
Ground |
|
|
0 |
0 |
0 |
V |
VIH(6) |
High-level input voltage |
LVCMOS (1.8 V) |
0.65 × DVDD18 |
|
|
V |
I2C |
0.7 × DVDD18 |
|
|
DDR3A, DDR3B EMIF |
VREFSSTL + 0.1 |
|
|
VIL (6) |
Low-level input voltage |
LVCMOS (1.8 V) |
|
|
0.35 × DVDD18 |
V |
DDR3A, DDR3B EMIF |
-0.3 |
|
VREFSSTL - 0.1 |
I2C |
|
|
0.3 × DVDD18 |
TC |
Operating case temperature |
Commercial |
0 |
|
85 |
°C |
Extended |
–40 |
|
100 |
(1) All differential clock inputs comply with the LVDS Electrical Specification, IEEE 1596.3-1996 and all SerDes I/Os comply with the XAUI Electrical Specification, IEEE 802.3ae-2002.
(2) All SerDes I/Os comply with the XAUI Electrical Specification, IEEE 802.3ae-2002.
(3) Users are required to program their board CVDD supply initial value to 1.0 V on the device. The initial CVDD voltage at power-on will be 1.0 V nominal and it must transition to VID set value, immediately after being presented on the VCNTL pins. This is required to maintain full power functionality and reliability targets ensured by TI.
(4) SRVnom refers to the unique SmartReflex core supply voltage that has a potential range of 0.8 V and 1.1 V which preset from the factory for each individual device. Your device may never be programmed to operate at the upper range but has been designed accordingly should it be determined to be acceptable or necessary. Power supplies intended to support the variable SRV function shall be capable of providing a 0.8 V-1.1 V dynamic range using a 4- or 6-bit binary input value which as provided by the DSP SmartReflex output.
(5) Where x = 1,2,3,4... to indicate all supplies of the same kind.
(6) For USB High-Speed, Full-Speed, and Low -Speed modes, USB I/Os adhere to Universal Serial Bus, revision 2.0 standard. For USB Super-Speed mode, USB I/Os adhere to Universal Serial Bus, revision 3.1 specification, revision 1.0 standard.
5.5 Electrical Characteristics
over recommended ranges of supply voltage and operating case temperature (unless otherwise noted)
PARAMETER |
TEST CONDITIONS(1) |
MIN |
TYP |
MAX |
UNIT |
VOH (2) |
High-level output voltage |
LVCMOS (1.8 V) |
IO = IOH |
DVDD18 – 0.45 |
|
|
V |
DDR3A, DDR3B |
|
DVDD15 – 0.4 |
|
|
I2C(3) |
|
|
|
|
VOL(2) |
Low-level output voltage |
LVCMOS (1.8 V) |
IO = IOL |
|
|
0.45 |
V |
DDR3A, DDR3B |
|
|
|
0.4 |
I2C |
IO = 3 mA, pulled up to 1.8 V |
|
|
0.4 |
II(4) |
Input current [DC] |
LVCMOS (1.8 V) |
No IPD/IPU |
–10 |
|
10 |
µA |
Internal pullup |
50 |
100 |
170 |
Internal pulldown |
–170 |
–100 |
–50 |
I2C |
0.1 × DVDD18 V < VI < 0.9 × DVDD18 V |
–10 |
|
10 |
IOH |
High-level output current [DC] |
LVCMOS (1.8 V) |
|
|
|
–6 |
mA |
DDR3A, DDR3B |
|
|
|
–8 |
I2C(5) |
|
|
|
|
IOL |
Low-level output current [DC] |
LVCMOS (1.8 V) |
|
|
|
6 |
mA |
DDR3A, DDR3B |
|
|
|
8 |
I2C |
|
|
|
3 |
IOZ(6) |
Off-state output current [DC] |
LVCMOS (1.8 V) |
|
–10 |
|
10 |
µA |
DDR3A, DDR3B |
|
–10 |
|
10 |
I2C |
|
–10 |
|
10 |
(1) For test conditions shown as MIN, MAX, or TYP, use the appropriate value specified in the recommended operating conditions table.
(2) For USB High-Speed, Full-Speed, and Low-Speed modes, USB I/Os adhere to Universal Serial Bus, revision 2.0 standard. For USB Super-Speed mode, USB I/Os adhere to Universal Serial Bus, revision 3.1 specification, revision 1.0 standard.
(3) I2C uses open collector I/Os and does not have a VOH minimum.
(4) II applies to input-only pins and bidirectional pins. For input-only pins, II indicates the input leakage current. For bidirectional pins, II includes input leakage current and off-state (Hi-Z) output leakage current.
(5) I2C uses open collector I/Os and does not have a IOH maximum.
(6) IOZ applies to output-only pins, indicating off-state (Hi-Z) output leakage current.
5.6 Thermal Resistance Characteristics for PBGA Package [AAW]
NO. |
|
°C/W(1)(2) |
1 |
RΘJC |
Junction-to-case |
0.11 |
2 |
RΘJB |
Junction-to-board |
1.65 |
(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
- JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
- JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
- JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
- JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
(2) °C/W = degrees Celsius per watt.
5.7 Power Supply to Peripheral I/O Mapping
over recommended ranges of supply voltage and operating case temperature (unless otherwise noted)(1)(2)
POWER SUPPLY |
I/O BUFFER TYPE |
ASSOCIATED PERIPHERAL |
CVDD |
Supply core AVS voltage |
LJCB |
SYSCLK(P|N) PLL input buffer |
ALTCORECLK(P|N) PLL input buffer |
SRIOSGMIICLK(P|N) SerDes PLL input buffer |
DDR3ACLK(P|N) PLL input buffer |
DDR3BCLK(P|N) PLL input buffer |
PASSCLK(P|N) PLL input buffer |
ARMCLK(P|N) PLL input buffer |
VDDALV |
|
LJCB |
SERDES low voltage |
VDDAHV |
SerDes I/O voltage |
SerDes/CML |
PCIECLK(P|N) SerDes Clock Reference |
HYP0CLK(P|N) SerDes Clock Reference |
HYP1CLK(P|N) SerDes Clock Reference |
USBCLK(P|M) SerDes Clock Reference |
DVDD15 |
1.35-V / 1.5-V supply I/O voltage |
DDR3A, DDR3B (1.35 V / 1.5 V) |
All DDR3A, DDR3B memory controller peripheral I/O buffer |
DVDD18 |
1.8-V supply I/O voltage |
LVCMOS (1.8 V) |
All GPIO peripheral I/O buffer |
All JTAG and EMU peripheral I/O buffer |
All TIMER peripheral I/O buffer |
All SPI peripheral I/O buffer |
All RESETs, NMI, control peripheral I/O buffer |
All SmartReflex peripheral I/O buffer |
All Hyperlink sideband peripheral I/O buffer |
All MDIO peripheral I/O buffer |
All UART peripheral I/O buffer |
Open-drain (1.8 V) |
All I2C peripheral I/O buffer |
(1) This table does not try to describe all functions of all power supply terminals but only those whose purpose it is to power peripheral I/O buffers and clock input buffers.