SBASA45 December 2022 ADC3544
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | NOM | MAX | UNIT | |
---|---|---|---|---|---|---|
ADC Timing Specifications | ||||||
tAD | Aperture delay | 0.85 | ns | |||
tA | Aperture jitter | Square wave clock with fast edges | 230 | fs | ||
tJ | Jitter on DCLKIN | Serial CMOS output mode | ± 50 | ps (pk-pk) | ||
tACQ | Signal acquisition period | Referenced to sampling clock falling edge | -TS/4 | Sampling Clock Period | ||
tCONV | Signal conversion period | Referenced to sampling clock falling edge | 6 | ns | ||
Wake up time | Time to valid data after coming out of power down. Internal reference. | Bandgap reference enabled, single ended clock | 13 | us | ||
Bandgap reference enabled, differential clock | 15 | |||||
Bandgap reference disabled, single ended clock | 2.4 | ms | ||||
Bandgap reference disabled, differential clock | 2.3 | |||||
Time to valid data after coming out of power down. External 1.6V reference. | Bandgap reference enabled, single ended clock | 13 | us | |||
Bandgap reference enabled, differential clock | 14 | |||||
Bandgap reference disabled, single ended clock | 2.0 | ms | ||||
Bandgap reference disabled, differential clock | 2.2 | |||||
tS,SYNC | Setup time for SYNC input signal | Referenced to sampling clock rising edge | 500 | ps | ||
tH,SYNC | Hold time for SYNC input signal | 600 | ||||
ADC Latency | Signal input to data output | SDR CMOS | 1 | Clock cycles | ||
DDR CMOS | 1 | |||||
Serialized CMOS: 2-wire | 2 | |||||
Serialized CMOS: 1-wire | 1 | |||||
Add Latency | Real decimation by 2 | 21 | Output clock cycles | |||
Complex decimation by 2 | 22 | |||||
Real or complex decimation by 4, 8, 16, 32 | 23 | |||||
INTERFACE TIMING - SDR CMOS | ||||||
tPD | Propagation delay: sampling clock falling edge to DCLK rising edge | Propagation delay: sampling clock falling edge to DCLK rising edge | 3 | 5 | 7 | ns |
tCD | DCLK rising edge to output data delay | Fout = 125 MSPS | -0.5 | -0.2 | ||
tDV | Data valid, SDR CMOS | Fout = 125 MSPS | 7.7 | 7.9 | ||
INTERFACE TIMING - DDR CMOS | ||||||
tPD | Propagation delay: sampling clock falling edge to DCLK rising edge | Propagation delay: sampling clock falling edge to DCLK rising edge | 3 | 5 | 7 | ns |
tCD | DCLK rising edge to output data delay | Fout = 125 MSPS | -0.5 | -0.3 | ||
tDV | Data valid, DDR CMOS | Fout = 125 MSPS | 3.5 | 3.8 | ||
INTERFACE TIMING - SERIAL CMOS | ||||||
tPD | Propagation delay: sampling clock falling edge to DCLK rising edge | Delay between sampling clock falling edge to DCLKIN falling edge < 2.5ns. TDCLK = DCLK period tCDCLK = Sampling clock falling edge to DCLKIN falling edge |
2 + TDCLK + tCDCLK | 3 + TDCLK + tCDCLK | 4 + TDCLK + tCDCLK | ns |
tPD | Propagation delay: sampling clock falling edge to DCLK rising edge | Delay between sampling clock falling edge to DCLKIN falling edge >= 2.5ns. TDCLK = DCLK period tCDCLK = Sampling clock falling edge to DCLKIN falling edge |
2 + tCDCLK | 3 + tCDCLK | 4 + tCDCLK | ns |
tCD | DCLK rising edge to output data delay, 2-wire serial CMOS |
Fout = 10 MSPS, D11/D12 = 80 MBPS | -0.24 | 0.10 | ns | |
DCLK rising edge to output data delay, 2-wire serial CMOS |
Fout = 20 MSPS, D11/D12 = 160 MBPS | -0.29 | 0.10 | |||
DCLK rising edge to output data delay, 2-wire serial CMOS |
Fout = 30 MSPS, D11/D12 = 240 MBPS | -0.28 | 0.09 | |||
DCLK rising edge to output data delay, 1-wire series CMOS |
Fout = 5 MSPS, D11 = 80 MBPS | -0.22 | 0.11 | |||
DCLK rising edge to output data delay, 1-wire series CMOS |
Fout = 10 MSPS, D11 = 160 MBPS | -0.27 | 0.11 | |||
DCLK rising edge to output data delay, 1-wire series CMOS |
Fout = 15 MSPS, D11 = 240 MBPS | -0.52 | 0.08 | |||
tDV | Data valid, 2-wire serial CMOS | Fout = 10 MSPS, D11/D12 = 80 MBPS | 12.19 | 12.36 | ns | |
Data valid, 2-wire serial CMOS | Fout = 20 MSPS, D11/D12 = 160 MBPS | 5.93 | 6.1 | |||
Data valid, 2-wire serial CMOS | Fout = 30 MSPS, D11/D12 = 240 MBPS | 3.91 | 4.07 | |||
Data valid, 1-wire serial CMOS | Fout = 5 MSPS, D11 = 80 MBPS | 12.21 | 12.39 | |||
Data valid, 1-wire serial CMOS | Fout = 10 MSPS, D11 = 160 MBPS | 5.95 | 6.1 | |||
Data valid, 1-wire serial CMOS | Fout = 15 MSPS, D11 = 240 MBPS | 3.83 | 4.08 | |||
SERIAL PROGRAMMING INTERFACE (SCLK, SEN, SDIO) - Input | ||||||
fCLK(SCLK) | Serial clock frequency | 20 | MHz | |||
tSU(SEN) | SEN to rising edge of SCLK | 10 | ns | |||
tH(SEN) | SEN from rising edge of SCLK | 9 | ns | |||
tSU(SDIO) | SDIO to rising edge of SCLK | 17 | ns | |||
tH(SDIO) | SDIO from rising edge of SCLK | 9 | ns | |||
SERIAL PROGRAMMING INTERFACE (SDIO) - Output | ||||||
t(OZD) | SDIO tri-state to driven | 3.9 | 10.8 | ns | ||
t(ODZ) | SDIO data to tri-state | 3.4 | 14 | ns | ||
t(OD) | SDIO valid from falling edge of SCLK | 3.9 | 10.8 | ns |