SBAS444E May   2009  – December 2024 ADS1113 , ADS1114 , ADS1115

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5.   Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements: I2C
    7. 5.7 Typical Characteristics
  8. Parameter Measurement Information
    1. 6.1 Noise Performance
  9. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Multiplexer
      2. 7.3.2 Analog Inputs
      3. 7.3.3 Full-Scale Range (FSR) and LSB Size
      4. 7.3.4 Voltage Reference
      5. 7.3.5 Oscillator
      6. 7.3.6 Output Data Rate and Conversion Time
      7. 7.3.7 Digital Comparator (ADS1114 and ADS1115 Only)
      8. 7.3.8 Conversion Ready Pin (ADS1114 and ADS1115 Only)
      9. 7.3.9 SMbus Alert Response
    4. 7.4 Device Functional Modes
      1. 7.4.1 Reset and Power-Up
      2. 7.4.2 Operating Modes
        1. 7.4.2.1 Single-Shot Mode
        2. 7.4.2.2 Continuous-Conversion Mode
      3. 7.4.3 Duty Cycling For Low Power
    5. 7.5 Programming
      1. 7.5.1 I2C Interface
        1. 7.5.1.1 I2C Address Selection
        2. 7.5.1.2 I2C General Call
        3. 7.5.1.3 I2C Speed Modes
      2. 7.5.2 Target Mode Operations
        1. 7.5.2.1 Receive Mode
        2. 7.5.2.2 Transmit Mode
      3. 7.5.3 Writing To and Reading From the Registers
      4. 7.5.4 Data Format
  10. Registers
    1. 8.1 Register Map
      1. 8.1.1 Address Pointer Register (address = N/A) [reset = N/A]
      2. 8.1.2 Conversion Register (P[1:0] = 00b) [reset = 0000h]
      3. 8.1.3 Config Register (P[1:0] = 01b) [reset = 8583h]
      4. 8.1.4 Lo_thresh (P[1:0] = 10b) [reset = 8000h] and Hi_thresh (P[1:0] = 11b) [reset = 7FFFh] Registers
  11. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Single-Ended Inputs
      3. 9.1.3 Input Protection
      4. 9.1.4 Unused Inputs and Outputs
      5. 9.1.5 Analog Input Filtering
      6. 9.1.6 Connecting Multiple Devices
      7. 9.1.7 Quick-Start Guide
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor Considerations
        2. 9.2.2.2 Operational Amplifier Considerations
        3. 9.2.2.3 ADC Input Common-Mode Considerations
        4. 9.2.2.4 Resistor (R1, R2, R3, R4) Considerations
        5. 9.2.2.5 Noise and Input Impedance Considerations
        6. 9.2.2.6 First-Order RC Filter Considerations
        7. 9.2.2.7 Circuit Implementation
        8. 9.2.2.8 Results Summary
      3. 9.2.3 Application Curves
  12. 10Power Supply Recommendations
    1. 10.1 Power-Supply Sequencing
    2. 10.2 Power-Supply Decoupling
  13. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  14. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  15. 13Revision History
  16. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Noise and Input Impedance Considerations

If vn_res represents the input-referred rms noise from all the resistors, vn_op represents the input-referred rms noise of OPA333, and vn_ADC represents the input-referred rms noise of ADS1115, the total input-referred noise of the entire system, vN, can be approximated by Equation 13.

Equation 13. vN2 = vn_res2 + vn_op2 + vn_ADC/ (1 + R2 / R1)2

The ADC noise contribution, vn_ADC, is attenuated by the noninverting gain stage.

If the gain of the noninverting gain stage is high (≥ 5), a good approximation for vn_res2 is given by Equation 14. The noise contribution from resistors R2, R4, R5, and R6 when referred to the input is smaller in comparison to R1 and R3 and can be neglected for approximation purposes.

Equation 14. vn_res2 = 4 · k · T · (R1 + R3) · Δf

where:

  • where k = Boltzmann constant
  • T = temperature (in kelvins)
  • Δf = noise bandwidth

An approximation for the input impedance, RIN, of the application circuit is given by Equation 15. RIN can be modeled as a resistor in parallel with the shunt resistor, and can contribute to additional gain error.

Equation 15. RIN = R3 + R4

From Equation 14 and Equation 15, a trade-off exists between vN and RIN. If R3 increases, vn_res increases, and therefore, the total input-referred rms system noise, vN, increases. If R3 decreases, the input impedance, RIN, drops, and causes additional gain error.