SBAS444E May 2009 – December 2024 ADS1113 , ADS1114 , ADS1115
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
ANALOG INPUT | |||||||
Common-mode input impedance | FSR = ±6.144V(1) | 10 | MΩ | ||||
FSR = ±4.096V(1), FSR = ±2.048V | 6 | ||||||
FSR = ±1.024V | 3 | ||||||
FSR = ±0.512V, FSR = ±0.256V | 100 | ||||||
Differential input impedance | FSR = ±6.144V(1) | 22 | MΩ | ||||
FSR = ±4.096V(1) | 15 | ||||||
FSR = ±2.048V | 4.9 | ||||||
FSR = ±1.024V | 2.4 | ||||||
FSR = ±0.512V, ±0.256V | 710 | kΩ | |||||
SYSTEM PERFORMANCE | |||||||
Resolution (no missing codes) | 16 | Bits | |||||
DR | Data rate | 8, 16, 32, 64, 128, 250, 475, 860 | SPS | ||||
Data rate variation | All data rates | –10% | 10% | ||||
Output noise | See Noise Performance section | ||||||
INL | Integral nonlinearity | DR = 8SPS, FSR = ±2.048V(2) | 1 | LSB | |||
Offset error | FSR = ±2.048V, differential inputs | –3 | ±1 | 3 | LSB | ||
FSR = ±2.048V, single-ended inputs | ±3 | ||||||
Offset drift over temperature | FSR = ±2.048V | 0.005 | LSB/°C | ||||
Long-term Offset drift | FSR = ±2.048V, TA = 125°C, 1000 hours |
±1 | LSB | ||||
Offset power-supply rejection | FSR = ±2.048V, DC supply variation | 1 | LSB/V | ||||
Offset channel match | Match between any two inputs | 3 | LSB | ||||
Gain error(3) | FSR = ±2.048V, TA = 25°C | 0.01% | 0.15% | ||||
Gain drift over temperature(3) | FSR = ±0.256V | 7 | ppm/°C | ||||
FSR = ±2.048V | 5 | 40 | |||||
FSR = ±6.144V(1) | 5 | ||||||
Long-term gain drift(3) | FSR = ±2.048V, TA = 125°C, 1000 hours |
±0.05% | |||||
Gain power-supply rejection | 80 | ppm/V | |||||
Gain match(3) | Match between any two gains | 0.02% | 0.1% | ||||
Gain channel match | Match between any two inputs | 0.05% | 0.1% | ||||
CMRR | Common-mode rejection ratio | At DC, FSR = ±0.256V | 105 | dB | |||
At DC, FSR = ±2.048V | 100 | ||||||
At DC, FSR = ±6.144V(1) | 90 | ||||||
fCM = 60Hz, DR = 8SPS | 105 | ||||||
fCM = 50Hz, DR = 8SPS | 105 | ||||||
DIGITAL INPUT/OUTPUT | |||||||
VIH | High-level input voltage | 0.7 VDD | 5.5 | V | |||
VIL | Low-level input voltage | GND | 0.3 VDD | V | |||
VOL | Low-level output voltage | IOL = 3mA | GND | 0.15 | 0.4 | V | |
Input leakage current | GND < VDIG < VDD | –10 | 10 | µA | |||
POWER-SUPPLY | |||||||
IVDD | Supply current | Power-down | TA = 25°C | 0.5 | 2 | µA | |
5 | |||||||
Operating | TA = 25°C | 150 | 200 | ||||
300 | |||||||
PD | Power dissipation | VDD = 5.0V | 0.9 | mW | |||
VDD = 3.3 V | 0.5 | ||||||
VDD = 2.0V | 0.3 |