SBAS769 March 2017 ADS7056
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |
---|---|---|---|
AVDD to GND | –0.3 | 3.9 | V |
DVDD to GND | –0.3 | 3.9 | V |
AINP to GND | –0.3 | AVDD + 0.3 | V |
AINM to GND | –0.3 | 0.3 | V |
Input current to any pin except supply pins | –10 | 10 | mA |
Digital input voltage to GND | –0.3 | DVDD + 0.3 | V |
Storage temperature, Tstg | –60 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
AVDD | Analog supply voltage range | 2.35 | 3 | 3.6 | V |
DVDD | Digital supply voltage range | 1.65 | 1.8 | 3.6 | V |
TA | Operating free-air temperature | –40 | 25 | 125 | °C |
THERMAL METRIC(1) | ADS7056 | UNIT | |
---|---|---|---|
RUG (X2QFN) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 177.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 51.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 76.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 1 | °C/W |
ψJB | Junction-to-board characterization parameter | 76.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
ANALOG INPUT | |||||||
Full-scale input voltage span(1) | 0 | AVDD | V | ||||
Absolute input voltage range | AINP to GND | –0.1 | AVDD + 0.1 | V | |||
AINM to GND | –0.1 | 0.1 | |||||
CS | Sampling capacitance | 16 | pF | ||||
SYSTEM PERFORMANCE | |||||||
Resolution | 14 | Bits | |||||
NMC | No missing codes | 14 | Bits | ||||
INL(8) | Integral nonlinearity | –3 | ±2 | 3 | LSB(2) | ||
DNL | Differential nonlinearity | –0.99 | ±0.5 | 1 | LSB | ||
EO (8) | Offset error | After calibration(7) | –6 | ±2.5 | 6 | LSB | |
dVOS/dT | Offset error drift with temperature | 1.75 | ppm/°C | ||||
EG(8) | Gain error | –0.1 | ±0.01 | 0.1 | %FS | ||
Gain error drift with temperature | 0.5 | ppm/°C | |||||
SAMPLING DYNAMICS | |||||||
tCONV | Conversion time | 18 × tSCLK | ns | ||||
tACQ | Acquisition time | 95 | ns | ||||
fSAMPLE | Maximum throughput rate | 60-MHz SCLK, AVDD = 2.35 V to 3.6 V | 2.5 | MHz | |||
Aperture delay | 3 | ns | |||||
Aperture jitter, RMS | 12 | ps | |||||
DYNAMIC CHARACTERISTICS | |||||||
SNR | Signal-to-noise ratio(4) | AVDD = 3.3 V | 72 | 74.9 | dB | ||
AVDD = 2.5 V | 73.7 | ||||||
THD | Total harmonic distortion(4)(3) | fIN = 2 kHz | –85 | dB | |||
fIN = 250 kHz | –84.8 | ||||||
fIN = 1000 kHz | –84.5 | ||||||
SINAD | Signal-to-noise and distortion(4) | fIN = 2 kHz | 71.75 | 74.5 | dB | ||
fIN = 250 kHz | 73.7 | ||||||
fIN = 1000 kHz | 73.7 | ||||||
SFDR | Spurious-free dynamic range(4) | fIN = 2 kHz | 89.8 | dB | |||
fIN = 250 kHz | 88 | ||||||
fIN = 1000 kHz | 87.5 | ||||||
BW(fp) | Full-power bandwidth | At –3 dB | 200 | MHz | |||
DIGITAL INPUT/OUTPUT (CMOS Logic Family) | |||||||
VIH | High-level input voltage(5) | 0.65 DVDD | DVDD + 0.3 | V | |||
VIL | Low-level input voltage(5) | –0.3 | 0.35 DVDD | V | |||
VOH | High-level output voltage(5) | At Isource = 500 µA | 0.8 DVDD | DVDD | V | ||
At Isource = 2 mA | DVDD – 0.45 | DVDD | |||||
VOL | Low-level output voltage(5) | At Isink = 500 µA | 0 | 0.2 DVDD | V | ||
At Isink = 2 mA | 0 | 0.45 | |||||
POWER-SUPPLY REQUIREMENTS | |||||||
AVDD | Analog supply voltage | 2.35 | 3 | 3.6 | V | ||
DVDD | Digital I/O supply voltage | 1.65 | 3 | 3.6 | V | ||
IAVDD | Analog supply current | AVDD = 3.3 V, fSAMPLE = 2.5 MSPS | 1050 | 1250 | µA | ||
AVDD = 3.3 V, fSAMPLE = 100 kSPS | 48 | 50 | |||||
AVDD = 3.3 V, fSAMPLE = 10 kSPS | 5 | ||||||
AVDD = 2.5 V, fSAMPLE = 2.5 MSPS | 750 | ||||||
Static current with CS and SCLK high | 0.02 | ||||||
IDVDD | Digital supply current | DVDD = 1.8 V, CSDO = 20 pF, output code = 2AAAh(6) |
630 | µA | |||
DVDD = 1.8 V, static current with CS and SCLK high | 0.01 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
tCLK | Time period of SCLK | 16.66 | ns | ||
tsu_CSCK | Setup time: CS falling edge to SCLK falling edge | 7 | ns | ||
tht_CKCS | Hold time: SCLK rising edge to CS rising edge | 8 | ns | ||
tph_CK | SCLK high time | 0.45 | 0.55 | tSCLK | |
tpl_CK | SCLK low time | 0.45 | 0.55 | tSCLK | |
tph_CS | CS high time | 15 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tCYCLE(1) | Cycle time | 400 | ns | |||
tCONV | Conversion time | 18 × tSCLK | ns | |||
tden_CSDO | Delay time: CS falling edge to data enable | 6.5 | ns | |||
td_CKDO | Delay time: SCLK rising edge to (next) data valid on SDO | 10 | ns | |||
tht_CKDO | SCLK rising edge to current data invalid | 2.5 | ||||
tdz_CSDO | Delay time: CS rising edge to SDO going to tri-state | 5.5 | ns |
SNR = 75.2 dB, THD = –90.25 dB, ENOB = 12.18 bits |
SNR = 74.2 dB, THD = –90.25 dB, fIN = 500 kHz |
AVDD = 2.35 V |
CS = DVDD |
SNR = 74.3 dB, THD = –87.9 dB, fIN = 250 kHz |
SNR = 73.9 dB, THD = –87.1 dB, fIN = 1000 kHz |
Standard deviation of codes = 0.94 LSB, VIN = AVDD / 2 |
AVDD = 2.35 V |