SBAS652A May   2014  – August 2014 ADS7950-Q1 , ADS7951-Q1 , ADS7952-Q1 , ADS7953-Q1 , ADS7954-Q1 , ADS7956-Q1 , ADS7957-Q1 , ADS7958-Q1 , ADS7959-Q1 , ADS7960-Q1 , ADS7961-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configurations and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  Handling Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: ADS7950-Q1, ADS7951-Q1, ADS7952-Q1, ADS7953-Q1
    6. 7.6  Electrical Characteristics: ADS7954-Q1, ADS7956-Q1, ADS7957-Q1
    7. 7.7  Electrical Characteristics: ADS7958-Q1, ADS7959-Q1, ADS7960-Q1, ADS7961-Q1
    8. 7.8  Timing Requirements
    9. 7.9  Typical Characteristics (All ADS79xx-Q1 Family Devices)
    10. 7.10 Typical Characteristics (12-Bit Devices Only)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Operation
      2. 8.3.2 Device Power-up Sequence
      3. 8.3.3 Analog Input
      4. 8.3.4 Reference
      5. 8.3.5 Power Saving
    4. 8.4 Device Functional Modes
      1. 8.4.1 Channel Sequencing Modes
      2. 8.4.2 Device Programming and Mode Control
        1. 8.4.2.1 Mode Control Register
        2. 8.4.2.2 Program Registers
      3. 8.4.3 Operating In Manual Mode
      4. 8.4.4 Operating In Auto-1 Mode
      5. 8.4.5 Operating In Auto-2 Mode
      6. 8.4.6 Continued Operation In A Selected Mode
    5. 8.5 Digital Output Code
    6. 8.6 Programming: GPIO
      1. 8.6.1 GPIO Registers
      2. 8.6.2 Alarm Thresholds for GPIO Pins
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Unbuffered Multiplexer Output (MXO)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 OPA192 Buffered Multiplexer Output (MXO)
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power-Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted).
MIN MAX UNIT
Supply voltage to ground +VA to AGND, +VBD to BDGND –0.3 7 V
Signal input AINP or CHn to AGND –0.3 V(+VA) + 0.3 V
Digital input To BDGND –0.3 7 V
Digital output To BDGND –0.3 V(+VA) + 0.3 V
Junction temperature, TJ 150 °C
(1) Stresses beyond those listed as absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated as recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1), level H2 –2 2 kV
Charged-device model (CDM), per AEC Q100-001, level C4B Corner pins
(1, 15, 16, and 30 for 30-pin packages
1, 19, 20, and 38 for 38-pin packages)		 –750 750 V
All pins –500 500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V(+VA) Analog power-supply voltage 2.7 3.3 5.25 V
V(+VBD) Digital I/O-supply voltage 1.7 3.3 V(+VA) V
V(REF) Reference voltage 2 2.5 3 V
ƒ(SCLK) SCLK frequency 20 MHz
TA Operating temperature range –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) ADS79xx-Q1 UNIT
DBT (TSSOP) DBT (TSSOP)
38 PINS 30 PINS
RθJA Junction-to-ambient thermal resistance 83.6 89.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 29.8 22.9
RθJB Junction-to-board thermal resistance 44.7 43.1
ψJT Junction-to-top characterization parameter 2.9 0.8
ψJB Junction-to-board characterization parameter 44.1 42.5
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: ADS7950-Q1, ADS7951-Q1, ADS7952-Q1, ADS7953-Q1

V(+VA) = 2.7 V to 5.25 V, V(+VBD) = 1.7 V to V(+VA), Vref = 2.5 V ± 0.1 V, TA = –40°C to 125°C, ƒsample = 1 MHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input span(1) Range 1 0 Vref V
Range 2 while 2 × Vref ≤ +VA 0 2 × Vref V
Absolute input range Range 1 –0.2 Vref + 0.2 V
Range 2 while 2 × Vref ≤ +VA –0.2 2 × Vref + 0.2 V
Input capacitance 15 ρF
Input leakage current TA = 125°C 61 nA
SYSTEM PERFORMANCE
Resolution 12 Bits
No missing codes 11 Bits
Integral linearity –1.5 ±0.75 1.5 LSB(2)
Differential linearity –2 ±0.75 1.5 LSB
Offset error(3) –3.5 ±1.1 3.5 LSB
Gain error Range 1 –2 ±0.2 2 LSB
Range 2 ±0.2 LSB
TUE Total unadjusted error ±2 LSB
SAMPLING DYNAMICS
Conversion time 20-MHz SCLK 800 ns
Acquisition time 325 ns
Maximum throughput rate 20-MHz SCLK 1 MHz
Aperture delay 5 ns
Step response 150 ns
Over voltage recovery 150 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(4) 100 kHz –82 dB
SNR Signal-to-noise ratio 100 kHz 70 71.7 dB
SINAD Signal-to-noise + distortion 100 kHz 68 71.3 dB
SFDR Spurious-free dynamic range 100 kHz 84 dB
Small signal bandwidth At –3 dB 47 MHz
Channel-to-channel crosstalk Any off-channel with 100 kHz. Full-scale input to channel being sampled with DC input (isolation crosstalk). –95 dB
From previously sampled to channel with 100 kHz. Full-scale input to channel being sampled with DC input (memory crosstalk). –85 dB
EXTERNAL REFERENCE INPUT
Vref Reference voltage at REFP(5) 2 2.5 3 V
Rref Reference resistance 100 kΩ
ALARM SETTING
Higher threshold range 0 FFC Hex
Lower threshold range 0 FFC Hex
DIGITAL INPUT/OUTPUT (CMOS Logic Family)
VIH High logic-level input voltage 0.7 × V(+VBD) V
VIL Low logic-level input voltage V(+VA) = 5 V 0.8 V
V(+VA) = 3 V 0.4 V
VOH High logic-level output voltage At source current (IS) = 200 μA V(+VBD) – 0.2 V
VOL Low logic-level output voltage At Isink = 200 μA 0.4 V
Data format MSB first MSB first
POWER SUPPLY REQUIREMENTS
V(+VA) Analog power-supply voltage 2.7 3.3 5.25 V
V(+VBD) Digital I/O-supply voltage 1.7 3.3 V(+VA) V
I(+VA) Supply current (normal mode) At V(+VA) = 2.7 V to 3.6 V and 1-MHz throughput 1.8 mA
At V(+VA) = 2.7 V to 3.6 V static state 1.05 mA
At V(+VA) = 4.7 V to 5.25 V and 1-MHz throughput 2.3 3 mA
At V(+VA) = 4.7 V to 5.25 V static state 1.1 1.5 mA
Power-down state supply current 1 μA
I(+VBD) Digital I/O-supply current V(+VA) = 5.25 V, ƒsample = 1 MHz 1 mA
Power-up time 1 µs
Invalid conversions after power up or reset 1 cycle
Latch-up JESD78 class I
TEMPERATURE RANGE
Specified performance –40 125 °C
(1) Ideal input span; does not include gain or offset error.
(2) LSB means least-significant bit.
(3) Measured relative to an ideal full-scale input
(4) Calculated on the first nine harmonics of the input frequency.
(5) The device is designed to operate over Vref = 2 V to 3 V. However, lower noise performance can be expected at Vref < 2.4 V, because of SNR degradation resulting from lowered signal range.

7.6 Electrical Characteristics: ADS7954-Q1, ADS7956-Q1, ADS7957-Q1

V(+VA) = 2.7 V to 5.25 V, V(+VBD) = 1.7 V to V(+VA), Vref = 2.5 V ± 0.1 V, TA = –40°C to 125°C, ƒsample = 1 MHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input span(1) Range 1 0 Vref V
Range 2 while 2 × Vref ≤ +VA 0 2 × Vref V
Absolute input range Range 1 –0.2 Vref + 0.2 V
Range 2 while 2 × Vref ≤ +VA –0.2 2 × Vref +0.2 V
Input capacitance 15 ρF
Input leakage current TA = 125°C 61 nA
SYSTEM PERFORMANCE
Resolution 10 Bits
No missing codes 10 Bits
Integral linearity –0.5 ±0.2 0.5 LSB(2)
Differential linearity –0.5 ±0.2 0.5 LSB
Offset error(3) –1.5 ±0.5 1.5 LSB
Gain error Range 1 –1 ±0.1 1 LSB
Range 2 ±0.1 LSB
SAMPLING DYNAMICS
Conversion time 20-MHz SCLK 800 ns
Acquisition time 325 ns
Maximum throughput rate 20-MHz SCLK 1 MHz
Aperture delay 5 ns
Step response 150 ns
Over voltage recovery 150 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(4) 100 kHz –80 dB
SNR Signal-to-noise ratio 100 kHz 60 dB
SINAD Signal-to-noise + distortion 100 kHz 60 dB
SFDR Spurious-free dynamic range 100 kHz 82 dB
Full-power bandwidth At –3 dB 47 MHz
Channel-to-channel crosstalk Any off-channel with 100 kHz. Full-scale input to channel being sampled with dc input. –95 dB
From previously sampled to channel with 100 kHz. Full-scale input to channel being sampled with dc input. –85 dB
EXTERNAL REFERENCE INPUT
Vref Reference voltage at REFP 2 2.5 3 V
Rref Reference resistance 100 kΩ
ALARM SETTING
Higher threshold range 000 FFC Hex
Lower threshold range 000 FFC Hex
DIGITAL INPUT/OUTPUT (CMOS Logic Family)
VIH High logic-level input voltage 0.7 × V(+VBD) V
VIL Low logic-level input voltage V(+VBD) = 5 V 0.8 V
V(+VBD) = 3 V 0.4 V
VOH High logic-level output voltage At source current (IS) = 200 μA V(+VBD) – 0.2 V
VOL Low logic-level output voltage At Isink = 200 μA 0.4 V
Data format MSB first MSB first
POWER SUPPLY REQUIREMENTS
V(+VA) Analog power-supply voltage 2.7 3.3 5.25 V
V(+VBD) Digital I/O-supply voltage 1.7 3.3 V(+VA) V
I(+VA) Supply current (normal mode) At V(+VA) = 2.7 V to 3.6 V and 1-MHz throughput 1.8 mA
At V(+VA) = 2.7 V to 3.6 V static state 1.05 1 mA
At V(+VA) = 4.7 V to 5.25 V and 1-MHz throughput 2.3 3 mA
At V(+VA) = 4.7 V to 5.25 V static state 1.1 1.5 mA
Power-down state supply current 1 μA
I(+VBD) Digital I/O-supply current V(+VA) = 5.25 V, ƒsample = 1 MHz 1 mA
Power-up time 1 μs
Invalid conversions after power up or reset 1 cycle
Latch-up JESD78 class I
TEMPERATURE RANGE
Specified performance –40 125 °C
(1) Ideal input span; does not include gain or offset error.
(2) LSB means least significant bit.
(3) Measured relative to an ideal full-scale input
(4) Calculated on the first nine harmonics of the input frequency.

7.7 Electrical Characteristics: ADS7958-Q1, ADS7959-Q1, ADS7960-Q1, ADS7961-Q1

V(+VA) = 2.7 V to 5.25 V, V(+VBD) = 1.7 V to V(+VA), Vref = 2.5 V ± 0.1 V, TA = –40°C to 125°C, ƒsample = 1 MHz (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input span(1) Range 1 0 Vref V
Range 2 while 2 × Vref ≤ +VA 0 2 × Vref V
Absolute input range Range 1 –0.20 Vref + 0.2 V
Range 2 while 2 × Vref ≤ +VA –0.20 2 × Vref + 0.2 V
Input capacitance 15 ρF
Input leakage current TA = 125°C 61 nA
SYSTEM PERFORMANCE
Resolution 8 Bits
No missing codes 8 Bits
Integral linearity –0.3 ±0.1 0.3 LSB(2)
Differential linearity –0.3 ±0.1 0.3 LSB
Offset error(3) –0.5 ±0.2 0.5 LSB
Gain error Range 1 –0.6 ±0.1 0.6 LSB
Range 2 ±0.1 LSB
SAMPLING DYNAMICS
Conversion time 20-MHz SCLK 800 ns
Acquisition time 325 ns
Maximum throughput rate 20-MHz SCLK 1 MHz
Aperture delay 5 ns
Step response 150 ns
Over voltage recovery 150 ns
DYNAMIC CHARACTERISTICS
THD Total harmonic distortion(4) 100 kHz –75 dB
SNR Signal-to-noise ratio 100 kHz 49 dB
SINAD Signal-to-noise + distortion 100 kHz 49 dB
SFDR Spurious-free dynamic range 100 kHz –78 dB
Full-power bandwidth At –3 dB 47 MHz
Channel-to-channel crosstalk Any off-channel with 100 kHz. Full-scale input to channel being sampled with dc input. –95 dB
From previously sampled to channel with 100 kHz. Full-scale input to channel being sampled with dc input. –85 dB
EXTERNAL REFERENCE INPUT
Vref reference voltage at REFP 2 2.5 3 V
Reference resistance 100 kΩ
ALARM SETTING
Higher threshold range 000 FF Hex
Lower threshold range 000 FF Hex
DIGITAL INPUT/OUTPUT (CMOS Logic Family)
VIH High logic-level input voltage 0.7 × V(+VBD) V
VIL Low logic-level input voltage V(+VBD) = 5 V 0.8 V
V(+VBD) = 3 V 0.4 V
VOH High logic-level output voltage At source current (IS) = 200 μA V(+VBD) – 0.2 V
VOL Low logic-level output voltage At Isink = 200 μA 0.4 V
Data format MSB first
POWER SUPPLY REQUIREMENTS
V(+VA) Analog power-supply voltage 2.7 3.3 5.25 V
V(+VBD) Digital I/O-supply voltage 1.7 3.3 V(+VA) V
I(+VA) Supply current (normal mode) At V(+VA) = 2.7 V to 3.6 V and 1-MHz throughput 1.8 mA
At V(+VA) = 2.7 V to 3.6 V static state 1.05 mA
At V(+VA) = 4.7 V to 5.25 V and 1-MHz throughput 2.3 3 mA
At V(+VA) = 4.7 V to 5.25 V static state 1.1 1.5 mA
Power-down state supply current 1 μA
I(+VBD) Digital I/O-supply current V(+VA) = 5.25 V, ƒsample = 1 MHz 1 mA
Power-up time 1 μs
Invalid conversions after power up or reset 1 cycle
Latch-up JESD78 class I
TEMPERATURE RANGE
Specified performance –40 125 °C
(1) Ideal input span; does not include gain or offset error.
(2) LSB means least significant bit.
(3) Measured relative to an ideal full-scale input
(4) Calculated on the first nine harmonics of the input frequency.

7.8 Timing Requirements

All specifications typical at –40°C to 125°C, V(+VA) = 2.7 V to 5.25 V (unless otherwise specified). See Figure 45, Figure 46, Figure 47, and Figure 48.
PARAMETER(1)(2) MIN TYP MAX UNIT
tc Conversion time V(+VBD) = 1.8 V 16 SCLK
V(+VBD) = 3 V 16 SCLK
V(+VBD) = 5 V 16 SCLK
tq Minimum quiet sampling time needed from bus Tri-state to start of next conversion V(+VBD) = 1.8 V 40 ns
V(+VBD) = 3 V 40 ns
V(+VBD) = 5 V 40 ns
td1 Delay time, CS low to first data (DO–15) out V(+VBD) = 1.8 V 38 ns
V(+VBD) = 3 V 27 ns
V(+VBD) = 5 V 17 ns
tsu1 Setup time, CS low to first rising edge of SCLK V(+VBD) = 1.8 V 8 ns
V(+VBD) = 3 V 6 ns
V(+VBD) = 5 V 4 ns
td2 Delay time, SCLK falling to SDO next data bit valid V(+VBD) = 1.8 V 35 ns
V(+VBD) = 3 V 27 ns
V(+VBD) = 5 V 17 ns
th1 Hold time, SCLK falling to SDO data bit valid V(+VBD) = 1.8 V 7 ns
V(+VBD) = 3 V 5 ns
V(+VBD) = 5 V 3 ns
td3 Delay time, 16th SCLK falling edge to SDO 3-state V(+VBD) = 1.8 V 26 ns
V(+VBD) = 3 V 22 ns
V(+VBD) = 5 V 13 ns
tsu2 Setup time, SDI valid to rising edge of SCLK V(+VBD) = 1.8 V 2 ns
V(+VBD) = 3 V 3 ns
V(+VBD) = 5 V 4 ns
th2 Hold time, rising edge of SCLK to SDI valid V(+VBD) = 1.8 V 12 ns
V(+VBD) = 3 V 10 ns
V(+VBD) = 5 V 6 ns
tw1 Pulse duration CS high V(+VBD) = 1.8 V 20 ns
V(+VBD) = 3 V 20 ns
V(+VBD) = 5 V 20 ns
td4 Delay time CS high to SDO 3-state V(+VBD) = 1.8 V 24 ns
V(+VBD) = 3 V 21 ns
V(+VBD) = 5 V 12 ns
twH Pulse duration SCLK high V(+VBD) = 1.8 V 20 ns
V(+VBD) = 3 V 20 ns
V(+VBD) = 5 V 20 ns
twL Pulse duration SCLK low V(+VBD) = 1.8 V 20 ns
V(+VBD) = 3 V 20 ns
V(+VBD) = 5 V 20 ns
ƒ(SCLK) Frequency SCLK V(+VBD) = 1.8 V 20 MHz
V(+VBD) = 3 V 20 MHz
V(+VBD) = 5 V 20 MHz
(1) 1.8-V specifications apply from 1.7 V to 1.9 V, 3-V specifications apply from 2.7 V to 3.6 V, 5-V specifications apply from 4.75 V to 5.25 V.
(2) With 50-pF load

7.9 Typical Characteristics (All ADS79xx-Q1 Family Devices)

icc_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C
Figure 1. Supply Current (I(+VA)) vs Supply Voltage (V(+VA))
icc_ta_sbas652.gif
ƒsample = 1 MSPS V(+VBD) = 5.5 V
Figure 3. Supply Current (I(+VA)) vs Free-Air Temperature
icc_fs_sbas652.gif
No power-down TA = 25°C
Figure 5. Supply Current (I(+VA)) vs Sample Rate
icc2_vcc_sbas652.gif
ƒsample = 0 MSPS TA = 25°C
Figure 2. Idle Supply Current (I(+VA)) vs Supply Voltage (V(+VA))
icc_ta2_sbas652.gif
ƒsample = 0 MSPS V(+VBD) = 5.5 V
Figure 4. Idle Supply Current (I(+VA)) vs
Free-Air Temperature
icc_fs2_sbas652.gif
With power-down mode enabled TA = 25°C
Figure 6. Supply Current (I(+VA)) vs Sample Rate with
Power-Down Mode Enabled

7.10 Typical Characteristics (12-Bit Devices Only)

Variations for 10-bit and 8-bit devices are too small to be illustrated through the characteristic curves.
dnl_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C
Figure 7. Differential Nonlinearity vs Supply Voltage (V(+VA))
dnl_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 9. Differential Nonlinearity vs Free-Air Temperature
oe_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 1.8 V
Figure 11. Offset Error vs Supply Voltage (V(+VA))
ge_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 1.8 V
Figure 13. Gain Error vs Supply Voltage (V(+VA))
oe_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5.5 V V(+VBD) = 1.8 V
Figure 15. Offset Error vs Free-Air Temperature
snr_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 17. Signal-to-Noise Ratio vs Supply Voltage (+VA)
thd_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 19. Total Harmonic Distortion (THD) vs Supply Voltage (V(+VA))
snr_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 21. Signal-to-Noise Ratio vs Free-Air Temperature
thd_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 23. Total Harmonic Distortion vs Free-Air Temperature
snr_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
TA = 25°C MXO shorted to AINP
Figure 25. Signal-to-Noise Ratio vs Input Frequency
thd_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
TA = 25°C MXO shorted to AINP
Figure 27. Total Harmonic Distortion vs Input Frequency
sinad2_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
TA = 25°C Buffer between MXO and AINP
Figure 29. Signal-to-Noise With Distortion vs Input Frequency (Across Different Source Resistance Values)
sfdr2_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
TA = 25°C Buffer between MXO and AINP
Figure 31. Spurious-Free Dynamic Range vs Input Frequency (Across Different Source Resistance Values)
inl_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 33. Integral Nonlinearity Variation Across Channels
eg_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 35. Gain-Error Variation Across Channels
sinad_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 37. Signal-to-Noise With Distortion Variation Across Channels
ainp_ta_sbas652.gif
V(+VA) = 5 V V(+VBD) = 5 V
Figure 39. Input Leakage Current vs Free-Air Temperature
unadj2_error_sbas652.gif
Figure 41. Total Unadjusted Error (TUE) Minimum
inl_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C
Figure 8. Integral Nonlinearity vs Supply Voltage (V(+VA))
inl_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 10. Integral Nonlinearity vs Free-Air Temperature
oe_vbd_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VA) = 5.5 V
Figure 12. Offset Error vs Interface Supply Voltage (V(+VBD))
ge_vbd_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VA) = 5.5 V
Figure 14. Gain Error vs Interface Supply Voltage (V(+VBD))
ge_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5.5 V V(+VBD) = 1.8 V
Figure 16. Gain Error vs Free-Air Temperature
sinad_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 18. Signal-to-Noise With Distortion vs Supply Voltage (V(+VA))
sfdr_vcc_sbas652.gif
ƒsample = 1 MSPS TA = 25°C V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 20. Spurious-Free Dynamic Range (SFDR) vs Supply Voltage (V(+VA))
sinad_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 22. Signal-to-Noise With Distortion vs Free-Air Temperature
sfdr_ta_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
ƒinput = 100 kHz
Figure 24. Spurious-Free Dynamic Range vs Free-air Temperature
sinad_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
TA = 25°C MXO shorted to AINP
Figure 26. Signal-to-Noise With Distortion vs Input Frequency
sfdr_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 3 V
TA = 25°C MXO shorted to AINP
Figure 28. Spurious-Free Dynamic Range vs Input Frequency
thd2_fin_sbas652.gif
ƒsample= 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
TA = 25°C Buffer between MXO and AINP
Figure 30. Total Harmonic Distortion vs Input Frequency (Across Different Source Resistance Values)
dnl_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 32. Differential Nonlinearity Variation Across Channels
eo_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 34. Offset-Error Variation Across Channels
snr_chn_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 36. Signal-to-Noise Ratio Variation Across Channels
crosstlk_fin_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
CH0, CH1
Figure 38. Crosstalk vs Input Frequency
unadj_error_sbas652.gif
Figure 40. Total Unadjusted Error (TUE) Maximum
dnl_code_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
TA = 25°C
Figure 42. Differential Linearity (DNL) Error
inl_code_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
Figure 43. Integral Linearity (INL) Error
fft_f_sbas652.gif
ƒsample = 1 MSPS V(+VA) = 5 V V(+VBD) = 5 V
ƒinput = 100 kHz Npoints = 16,384
Figure 44. Power Spectrum