SLUSC35B April 2015 – April 2019 AM3358-EP
PRODUCTION DATA.
High-speed (HS) bypass capacitors are critical for proper DDR3 interface operation. It is particularly important to minimize the parasitic series inductance of the HS bypass capacitors, the AM3358-EP device DDR3 power, and the AM3358-EP device DDR3 ground connections. Table 7-65 contains the specification for the HS bypass capacitors as well as for the power connections on the PCB. Generally speaking, it is good to:
NO. | PARAMETER | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
1 | HS bypass capacitor package size(1) | 0201 | 0402 | 10 mils | |
2 | Distance, HS bypass capacitor to AM3358-EP VDDS_DDR and VSS terminal being bypassed(2)(3)(4) | 400 | mils | ||
3 | AM3358-EP VDDS_DDR HS bypass capacitor count | 20 | devices | ||
4 | AM3358-EP VDDS_DDR HS bypass capacitor total capacitance | 1 | μF | ||
5 | Trace length from AM3358-EP VDDS_DDR and VSS terminal to connection via(2) | 35 | 70 | mils | |
6 | Distance, HS bypass capacitor to DDR3 device being bypassed(5) | 150 | mils | ||
7 | DDR3 device HS bypass capacitor count(6) | 12 | devices | ||
8 | DDR3 device HS bypass capacitor total capacitance(6) | 0.85 | μF | ||
9 | Number of connection vias for each HS bypass capacitor(7)(8) | 2 | vias | ||
10 | Trace length from bypass capacitor connect to connection via(2)(8) | 35 | 100 | mils | |
11 | Number of connection vias for each DDR3 device power and ground terminal(9) | 1 | vias | ||
12 | Trace length from DDR3 device power and ground terminal to connection via(2)(7) | 35 | 60 | mils |