5.9.1.2 I/O and Analog Voltage Decoupling Capacitors
Table 5-10 summarizes the power-supply decoupling capacitor recommendations.
Table 5-10 Power-Supply Decoupling Capacitor Characteristics
PARAMETER |
TYP |
UNIT |
CVDDA_ADC |
10 |
nF |
CVDDA1P8V_USB0 |
10 |
nF |
CCVDDA3P3V_USB0 |
10 |
nF |
CVDDA1P8V_USB1 |
10 |
nF |
CVDDA3P3V_USB1 |
10 |
nF |
CVDDS(1) |
10.04 |
μF |
CVDDS_DDR |
(2) |
|
CVDDS_OSC |
10 |
nF |
CVDDS_PLL_DDR |
10 |
nF |
CVDDS_PLL_CORE_LCD |
10 |
nF |
CVDDS_SRAM_CORE_BG(3) |
10.01 |
μF |
CVDDS_SRAM_MPU_BB(4) |
10.01 |
μF |
CVDDS_PLL_MPU |
10 |
nF |
CVDDS_RTC |
10 |
nF |
CVDDSHV1(5) |
10.02 |
μF |
CVDDSHV2(5) |
10.02 |
μF |
CVDDSHV3(5) |
10.02 |
μF |
CVDDSHV4(5) |
10.02 |
μF |
CVDDSHV5(5) |
10.02 |
μF |
CVDDSHV6(6) |
10.06 |
μF |
- Typical values consist of one capacitor of 10 μF and four capacitors of 10 nF.
- For more details on decoupling capacitor requirements for the mDDR(LPDDR), DDR2, DDR3, DDR3L memory interface, seeSection 7.7.2.1.2.6 and Section 7.7.2.1.2.7 when using mDDR(LPDDR) memory devices,Section 7.7.2.2.2.6 and Section 7.7.2.2.2.7 when using DDR2 memory devices, or Section 7.7.2.3.3.6 and Section 7.7.2.3.3.7 when using DDR3 or DDR3L memory devices.
- VDDS_SRAM_CORE_BG supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the VDDS_SRAM_CORE_BG supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_CORE_BG terminals. A 10 µF is recommended to be placed close to the terminal and routed with widest traces possible to minimize the voltage drop on VDDS_SRAM_CORE_BG terminals.
- VDDS_SRAM_MPU_BB supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the VDDS_SRAM_MPU_BB supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_MPU_BB terminals. A 10 µF is recommended to be placed close to the terminal and routed with widest traces possible to minimize the voltage drop on VDDS_SRAM_MPU_BB terminals.
- Typical values consist of one capacitor of 10 μF and two capacitors of 10 nF.
- Typical values consist of one capacitor of 10 μF and six capacitors of 10 nF.