SBASB17 October   2024 AMC0381D-Q1

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5.   Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Timing Diagram
  8. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Isolation Channel Signal Transmission
      3. 6.3.3 Analog Output
    4. 6.4 Device Functional Modes
  9. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Best Design Practices
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. Revision History
  12. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DFX|15
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Switching Characteristics

over operating ambient temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tr Output signal rise time 1.8 µs
tf Output signal fall time 1.8 µs
VHVIN to VOUTx signal delay (50% – 10%) Unfiltered output 2.4 µs
VHVIN to VOUTx signal delay (50% – 50%) Unfiltered output 3.0 3.2 µs
VHVIN to VOUTx signal delay (50% – 90%) Unfiltered output 4.2 µs
tAS Analog settling time VDD1 step to 3.0V with VDD2 ≥ 3.0V, to VOUTP, VOUTN valid, 0.1% settling 50 100 µs