SBAS837B August   2018  – April 2020 AMC1035

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Example
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Modulator
      3. 7.3.3 Reference Output
      4. 7.3.4 Clock Input
      5. 7.3.5 Digital Output
      6. 7.3.6 Manchester Coding Feature
    4. 7.4 Device Functional Modes
      1. 7.4.1 Output Behavior in Case of a Full-Scale Input
      2. 7.4.2 Fail-Safe Output
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Digital Filter Usage
    2. 8.2 Typical Applications
      1. 8.2.1 Voltage Sensing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 IGBT Temperature Sensing
      3. 8.2.3 What to Do and What Not to Do
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to +125°C, VDD = 3.0 V to 5.5 V, AINP = –1 V to 1 V, AINN = GND, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are at TA = 25°C, CLKIN = 20 MHz, and VDD = 3.3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
VCMuv(1) Negative common-mode undervoltage detection level(2) (VAINP + VAINN) / 2, VAINP = VAINN –1.45 V
(VAINP + VAINN) / 2, |VAINP – VAINN| = 1.25 V –0.85
VCMov(1) Positive common-mode overvoltage detection level(2) 3.0 V ≤ VDD < 4 V, VAINP = VAINN VDD – 1.35 V
3.0 V ≤ VDD < 4.5 V, |VAINP – VAINN| = 1.25 V VDD – 2.35
4 V ≤ VDD ≤ 5.5 V, VAINP = VAINN 2.75
4.5 V ≤ VDD ≤ 5.5 V, |VAINP – VAINN| = 1.25 V 2.15
RIN Single-ended input resistance AINN = GND 0.1 0.4 GΩ
RIND  Differential input resistance 0.16 1.6 GΩ
CIN Single-ended input capacitance AINN = GND 2 pF
CIND  Differential input capacitance 2 pF
IIB  Input bias current AINP = AINN = GND, (IAINP + IAINN) / 2 –10 ±3 10 nA
TCIIB  Input bias current thermal drift AINP = AINN = GND, (IAINP + IAINN) / 2 ±5 pA/°C
IIO  Input offset current IIO = IAINP – IAINN –5 ±1 5 nA
CMRR Common-mode rejection ratio AINP = AINN, fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max –104 dB
AINP = AINN, fIN from 0.1 Hz to 50 kHz,
–0.5 V ≤ VIN ≤ 0.5 V 		–88
DC ACCURACY
Resolution(3) 16 Bits
INL Integral nonlinearity(4) Resolution: 16 bits –12 ±2 12 LSB
EO Offset error  Initial, at TA = 25°C, AINP = AINN = GND –0.5 ±0.03 0.5 mV
TCEO Offset error thermal drift(5) –6 ±0.1 6 µV/°C
EG Gain error Initial, at TA = 25°C –0.25% ±0.02% 0.25%
Initial, at TA = 25°C, ratiometric mode –0.3% ±0.02% 0.3%
TCEG Gain error thermal drift(6) –45 ±20 45 ppm/°C
Ratiometric mode –15 ±4 15
PSRR Power-supply rejection ratio AINP = AINN = GND, at dc –90 dB
AINP = AINN = GND, 10 kHz, 100-mV ripple –84
AC ACCURACY
SNR Signal-to-noise ratio fIN = 1 kHz 81 87 dB
SINAD Signal-to-noise + distortion fIN = 1 kHz 77 83 dB
THD Total harmonic distortion fIN = 1 kHz –87 –78 dB
SFDR Spurious-free dynamic range fIN = 1 kHz 78 87 dB
REFERENCE OUTPUT
VREFOUT Reference output voltage Initial, at TA = 25°C, no load 2.495 2.5 2.505 V
TCVREFOUT Reference output voltage drift –50 ±20 50 ppm/°C
IREFOUT Reference output current CLOAD < 1 nF(7) –5 5 mA
Load regulation Load to GND or VDD 0.15 0.35 mV/mA
ISC Short-circuit current REFOUT to GND 23 mA
REFOUT to VDD –21
PSRR Power-supply rejection ratio –200 ±30 200 µV/V
DIGITAL INPUTS (CMOS Logic With Schmitt-Trigger)
IIN Input current GND ≤ VIN ≤ VDD 35 μA
CIN Input capacitance 3 pF
VIH High-level input voltage 0.7 × VDD VDD + 0.3 V
VIL Low-level input voltage –0.3 0.3 × VDD V
DIGITAL OUTPUT: CMOS
CLOAD Output load capacitance fCLKIN = 21 MHz 15 30 pF
VOH High-level output voltage IOH = –20 µA VDD – 0.1 V
IOH = –4 mA VDD – 0.4
VOL Low-level output voltage IOL = 20 µA 0.1 V
IOL = 4 mA 0.4
POWER SUPPLY
IVDD High-side supply current 3.0 V ≤ VDD ≤ 3.6 V, IREFOUT = 0 mA, MCE = 0, CLOAD = 15 pF 5.2 6.8 mA
3.0 V ≤ VDD ≤ 3.6 V, IREFOUT = 0 mA, MCE = 1, CLOAD = 15 pF(8) 4.6 6.1
4.5 V ≤ VDD ≤ 5.5 V, IREFOUT = 0 mA, MCE = 0, CLOAD = 15 pF 6.4 8.3
4.5 V ≤ VDD ≤ 5.5 V, IREFOUT = 0 mA, MCE = 1, CLOAD = 15 pF(8) 5.4 7.2
(1) See the Analog Input section for more details.
(2) The common-mode overvoltage detection level has a typical hysteresis of 35 mV.
(3) The filter output is truncated to 16 bits. 16 bits of no missing codes is specified by design.
(4) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(5) Offset error drift is calculated using the box method, as described by the following equation: AMC1035 ec_eodrift_bas654.gif.
(6) Gain error drift is calculated using the box method, as described by the following equation: AMC1035 ec_egdrift_bas654.gif .
(7) Capacitive load with a value ≥ 1nF requires series resistor to be connected to the REFOUT pin. See the Reference Output section for more details.
(8) Typical value is specified at fCLKIN = 10 MHz, maximum value is specified at fCLKIN = 11 MHz.