SBAS667G april   2016  – april 2023 AMC1301

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
    1.     Device Comparison Table
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Timing Diagram
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Analog Input
      2. 7.3.2 Isolation Channel Signal Transmission
      3. 7.3.3 Analog Output
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Shunt Resistor Sizing
        2. 8.2.2.2 Input Filter Design
        3. 8.2.2.3 Differential to Single-Ended Output Conversion
      3. 8.2.3 Application Curve
    3. 8.3 Best Design Practices
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.9 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to +125°C (for AMC1301S: TA = –55°C to +125°C), VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP = –250 mV to +250 mV, and INN = GND1; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
VCMov Common-mode overvoltage detection level (VINP + VINN) / 2 to GND1 VDD1 – 2 V
Hysteresis of common-mode overvoltage detection level 60 mV
VOS Input offset voltage(1) Initial, at TA = 25°C, INP = INN = GND1 –0.2 ±0.05 0.2 mV
TCVOS Input offset drift(1)(4) AMC1301 –3 ±1 3 µV/°C
AMC1301S –4 ±1 4
CMRR Common-mode rejection ratio fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max –93 dB
fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max –93
RIN Single-ended input resistance INN = GND1 18 kΩ
RIND Differential input resistance 22 kΩ
IIB Input bias current INP = INN = GND1; IIB = (IIBP + IIBN) / 2 –41 –30 –24 µA
TCIIB Input bias current drift 1 nA/°C
CIND Differential input capacitance 1 pF
ANALOG OUTPUT
Nominal gain 8.2 V/V
EG Gain error(1) at TA = 25°C –0.3% ±0.05% 0.3%
TCEG Gain drift(1)(5) AMC1301 –50 ±15 50 ppm/°C
AMC1301S –60 ±15 60
Nonlinearity(1) –0.03% ±0.01% 0.03%
Nonlinearity drift ±1 ppm/°C
THD Total harmonic distortion(3) fIN = 10 kHz –87 dB
Output noise INP = INN = GND1, fIN = 0 Hz,
BW = 100 kHz brickwall filter		 220 µVRMS
SNR Signal-to-noise ratio fIN = 1 kHz, BW = 10 kHz 80 84 dB
fIN = 10 kHz, BW = 100 kHz 71
PSRR Power-supply rejection ratio(2) PSRR vs VDD1, at DC –94 dB
PSRR vs VDD1,
100-mV and 10-kHz ripple		 –90
PSRR vs VDD2, at DC –100
PSRR vs VDD2,
100-mV and 10-kHz ripple		 –94
VCMout Common-mode output voltage 1.39 1.44 1.49 V
VCLIPout Clipping differential output voltage VOUT = (VOUTP – VOUTN);
|VIN| = |VINP – VINN| > |VClipping|		 –2.52 ±2.49 2.52 V
VFailsafe Failsafe differential output voltage VCM ≥ VCMov, or VDD1 missing –2.563 –2.545 V
BW Output bandwidth 190 210 kHz
ROUT Output resistance On OUTP or OUTN < 0.2 Ω
Output short-circuit current On OUTP or OUTN, sourcing or sinking,
INN = INP = GND1, outputs shorted to
either GND2 or VDD2		 13 mA
CMTI Common-mode transient immunity |GND1 – GND2| = 1 kV 15 kV/µs
POWER SUPPLY
IDD1 High-side supply current 3.0 V ≤ VDD1 ≤ 3.6 V 6.3 8.5 mA
4.5 V ≤ VDD1 ≤ 5.5 V 7.2 9.8
IDD2 Low-side supply current 3.0 V ≤ VDD2 ≤ 3.6 V 5.3
7.2

 mA
4.5 V ≤ VDD2 ≤ 5.5 V 5.9 8.1
(1) The typical value includes one standard deviation (sigma) at nominal operating conditions.
(2) This parameter is input referred.
(3) THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.
(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCVOS = (VOS,MAX - VOS,MIN) / TempRange where VOS,MAX and VOS,MIN refer to the maximum and minimum VOS values measured within the temperature range (–40 to 125℃).
(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 125℃).