SBAS797 February 2017 AMC1305L25-Q1 , AMC1305M05-Q1 , AMC1305M25-Q1
PRODUCTION DATA.
The AMC1305-Q1 device is a precision, delta-sigma (ΔΣ) modulator with the output separated from the input circuitry by a capacitive double isolation barrier that is highly resistant to magnetic interference. This barrier is certified to provide reinforced isolation of up to 7000 VPEAK according to the DIN V VDE V 0884-10, UL1577, and CSA standards. Used in conjunction with isolated power supplies, the device prevents noise currents on a high common-mode voltage line from entering the local system ground and interfering with or damaging low voltage circuitry.
The AMC1305-Q1 is optimized for direct connection to shunt resistors or other low voltage level signal sources and supports excellent dc and ac performance. Shunt resistors are typically used to sense currents in traction inverters, onboard chargers, or other such automotive applications. By using an appropriate digital filter (that is, as integrated on the TMS320F2837x) to decimate the bit stream, the device can achieve 16 bits of resolution with a dynamic range of 85 dB (13.8 ENOB) at a data rate of 78 kSPS.
On the high-side, the modulator is supplied with a nominal voltage of 5 V (AVDD), whereas the isolated digital interface operates from a 3.3-V or 5-V power supply (DVDD).
The AMC1305-Q1 is available in a wide-body SOIC-16 (DW) package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
AMC1305x-Q1 | SOIC (16) | 10.30 mm × 7.50 mm |
DATE | REVISION | NOTES |
---|---|---|
February 2017 | * | Initial release. |
PART NUMBER | INPUT VOLTAGE RANGE | DIFFERENTIAL INPUT RESISTANCE | SNR (sinc3 Filter, 78 kSPS) |
OUTPUT INTERFACE |
---|---|---|---|---|
AMC1305L25-Q1 | ±250 mV | 25 kΩ | 82 dB | LVDS |
AMC1305M05-Q1 | ±50 mV | 5 kΩ | 76 dB | CMOS |
AMC1305M25-Q1 | ±250 mV | 25 kΩ | 82 dB | CMOS |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
AGND | 4 | — | This pin is internally connected to pin 8 and can be left unconnected or tied to high-side ground |
8 | — | High-side ground reference | |
AINN | 3 | I | Inverting analog input |
AINP | 2 | I | Noninverting analog input |
AVDD | 7 | — | High-side power supply, 4.5 V to 5.5 V. See the Power-Supply Recommendations section for decoupling recommendations. |
CLKIN | 13 | I | Modulator clock input, 5 MHz to 20.1 MHz |
CLKIN_N | 12 | I | AMC1305L25-Q1 only: inverted modulator clock input |
DGND | 9, 16 | — | Controller-side ground reference |
DOUT | 11 | O | Modulator data output |
DOUT_N | 10 | O | AMC1305L25-Q1 only: inverted modulator data output |
DVDD | 14 | — | Controller-side power supply, 3.0 to 5.5 V |
NC | 1 | — | This pin can be connected to AVDD or can be left unconnected |
5 | — | This pin can be left unconnected or tied to AGND only | |
6, 10, 12 | — | These pins have no internal connection (pins 10 and 12 on the AMC1305Mx-Q1 only). | |
15 | — | This pin can be left unconnected or tied to DVDD only |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, AVDD to AGND or DVDD to DGND | –0.3 | 6.5 | V | |
Analog input voltage at AINP, AINN | AGND – 6 | AVDD + 0.5 | V | |
Digital input voltage at CLKIN, CLKIN_N | DGND – 0.3 | DVDD + 0.3 | V | |
Input current to any pin except supply pins | –10 | 10 | mA | |
Maximum virtual junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | ±2500 | V |
Charged device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
AVDD | High-side (analog) supply voltage | 4.5 | 5.0 | 5.5 | V |
DVDD | Controller-side (digital) supply voltage | 3.0 | 3.3 | 5.5 | V |
TA | Operating ambient temperature range | –40 | 125 | °C |
THERMAL METRIC(1) | AMC1305x-Q1 | UNIT | |
---|---|---|---|
DW (SOIC) | |||
16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 80.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 40.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 45.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 11.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 44.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | °C/W |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
PD | Maximum power dissipation (both sides) | AVDD = 5.5 V, DVDD = 5.5 V, LVDS, RLOAD = 100 Ω | 89.1 | mW |
PD1 | Maximum power dissipation (high-side supply) | AVDD = 5.5 V | 45.1 | mW |
PD2 | Maximum power dissipation (low-side supply) | DVDD = 5.5 V, LVDS, RLOAD = 100 Ω | 44 | mW |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
GENERAL | ||||
CLR | Minimum air gap (clearance)(1) | Shortest pin-to-pin distance through air | ≥ 8 | mm |
CPG | Minimum external tracking (creepage)(1) | Shortest pin-to-pin distance across the package surface | ≥ 8 | mm |
DTI | Distance through insulation | Minimum internal gap (internal clearance) of the double insulation (2 × 0.0135 mm) | 0.027 | mm |
CTI | Comparative tracking index | DIN EN 60112 (VDE 0303-11); IEC 60112 | ≥ 600 | V |
Material group | According to IEC 60664-1 | I | ||
Overvoltage category per IEC 60664-1 | Rated mains voltage ≤ 300 VRMS | I-IV | ||
Rated mains voltage ≤ 600 VRMS | I-III | |||
Rated mains voltage ≤ 1000 VRMS | I-II | |||
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12(2) | ||||
VIORM | Maximum repetitive peak isolation voltage | At ac voltage (bipolar or unipolar) | 1414 | VPK |
VIOWM | Maximum-rated isolation working voltage | At ac voltage (sine wave) | 1000 | VRMS |
At dc voltage | 1500 | VDC | ||
VIOTM | Maximum transient isolation voltage | VTEST = VIOTM, t = 60 s (qualification test) | 7000 | VPK |
VTEST = 1.2 x VIOTM, t = 1 s (100% production test) | 8400 | |||
VIOSM | Maximum surge isolation voltage(3) | Test method per IEC 60065, 1.2/50-μs waveform, VTEST = 1.6 x VIOSM = 10000 VPK (qualification) | 6250 | VPK |
qpd | Apparent charge(4) | Method a, after input/output safety test subgroup 2 / 3, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 x VIORM = 1697 VPK, tm = 10 s | ≤ 5 | pC |
Method a, after environmental tests subgroup 1, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.6 x VIORM = 2263 VPK, tm = 10 s | ≤ 5 | pC | ||
Method b1, at routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s, Vpd(m) = 1.875 x VIORM = 2652 VPK, tm = 1 s | ≤ 5 | pC | ||
CIO | Barrier capacitance, input to output(5) | VIO = 0.5 VPP at 1 MHz | 1.2 | pF |
RIO | Insulation resistance, input to output(5) | VIO = 500 V at TS = 150°C | > 109 | Ω |
Pollution degree | 2 | |||
Climatic category | 40/125/21 | |||
UL1577 | ||||
VISO | Withstand isolation voltage | VTEST = VISO = 5000 VRMS or 7000 VDC, t = 60 s (qualification test), VTEST = 1.2 x VISO = 6000 VRMS, t = 1 s (100% production test) | 5000 | VRMS |
VDE | UL | ||
---|---|---|---|
Certified according to DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12, DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08, and DIN EN 60095 (VDE 0860): 2005-11 | Recognized under UL1577 component recognition and CSA component acceptance NO 5 programs | ||
Reinforced insulation | Single protection | ||
File number: 40040142 | File number: E181974 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IS | Safety input, output, or supply current | θJA = 80.2°C/W, AVDD = DVDD = 5.5 V, TJ = 150°C, TA = 25°C, see Figure 3 | 283 | mA | ||
θJA = 80.2°C/W, AVDD = DVDD = 3.6 V, TJ = 150°C, TA = 25°C, see Figure 3 | 432 | mA | ||||
PS | Safety input, output, or total power | θJA = 80.2°C/W, TJ = 150°C, TA = 25°C, see Figure 4 | 1558(1) | mW | ||
TS | Maximum safety temperature | 150 | °C |
The maximum safety temperature is the maximum junction temperature specified for the device. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUTS | ||||||
VClipping | Maximum differential voltage input range (AINP-AINN) |
±62.5 | mV | |||
FSR | Specified linear full-scale range (AINP-AINN) |
–50 | 50 | mV | ||
VCM | Operating common-mode input range | –0.032 | AVDD – 2 | V | ||
CID | Differential input capacitance | 2 | pF | |||
IIB | Input current | Inputs shorted to AGND | –97 | –72 | -57 | μA |
RID | Differential input resistance | 5 | kΩ | |||
IOS | Input offset current | ±5 | nA | |||
CMTI | Common-mode transient immunity | 15 | kV/μs | |||
CMRR | Common-mode rejection ratio | fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max |
–104 | dB | ||
fIN from 0.1 Hz to 50 kHz, VCM min ≤ VIN ≤ VCM max |
–75 | |||||
BW | Input bandwidth | 800 | kHz | |||
DC ACCURACY | ||||||
DNL | Differential nonlinearity | Resolution: 16 bits | –0.99 | 0.99 | LSB | |
INL | Integral nonlinearity(3) | Resolution: 16 bits | –5 | ±1.5 | 5 | LSB |
EO | Offset error | Initial, at 25°C | –50 | ±2.5 | 50 | µV |
TCEO | Offset error thermal drift(1) | –1.3 | 1.3 | μV/°C | ||
EG | Gain error | Initial, at 25°C | –0.3% | –0.02% | 0.3% | |
TCEG | Gain error thermal drift(2) | –40 | ±20 | 40 | ppm/°C | |
PSRR | Power-supply rejection ratio | VAVDD from 4.5 to 5.5V, at dc | 105 | dB | ||
AC ACCURACY | ||||||
SNR | Signal-to-noise ratio | fIN = 1 kHz | 76 | 81 | dB | |
SINAD | Signal-to-noise + distortion | fIN = 1 kHz | 76 | 81 | dB | |
THD | Total harmonic distortion | fIN = 1 kHz | –90 | –83 | dB | |
SFDR | Spurious-free dynamic range | fIN = 1 kHz | 83 | 92 | dB | |
DIGITAL INPUTS/OUTPUTS | ||||||
External Clock | ||||||
fCLKIN | Input clock frequency | 5 | 20 | 20.1 | MHz | |
DutyCLKIN | Duty cycle | 5 MHz ≤ fCLKIN ≤ 20.1 MHz | 40% | 50% | 60% | |
CMOS Logic Family, CMOS with Schmitt-Trigger | ||||||
IIN | Input current | DGND ≤ VIN ≤ DVDD | –1 | 1 | μA | |
CIN | Input capacitance | 5 | pF | |||
VIH | High-level input voltage | 0.7 × DVDD | DVDD + 0.3 | V | ||
VIL | Low-level input voltage | –0.3 | 0.3 × DVDD | V | ||
CLOAD | Output load capacitance | fCLKIN = 20 MHz | 30 | pF | ||
VOH | High-level output voltage | IOH = –20 µA | DVDD – 0.1 | V | ||
IOH = –4 mA | DVDD – 0.4 | |||||
VOL | Low-level output voltage | IOL = 20 µA | 0.1 | V | ||
IOL = 4 mA | 0.4 | |||||
POWER SUPPLY | ||||||
AVDD | High-side supply voltage | 4.5 | 5.0 | 5.5 | V | |
IAVDD | High-side supply current | 6.5 | 8.2 | mA | ||
PAVDD | High-side power dissipation | 32.5 | 45.1 | mW | ||
DVDD | Controller-side supply voltage | 3.0 | 3.3 | 5.5 | V | |
IDVDD | Controller-side supply current | 3.0 V ≤ DVDD ≤ 3.6 V | 2.7 | 4.0 | mA | |
4.5 V ≤ DVDD ≤ 5.5 V | 3.2 | 5.5 | ||||
PDVDD | Controller-side power dissipation | 3.0 V ≤ DVDD ≤ 3.6 V | 8.9 | 14.4 | mW | |
4.5 V ≤ DVDD ≤ 5.5 V | 16.0 | 30.3 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUTS | ||||||
VClipping | Maximum differential voltage input range (AINP-AINN) |
±312.5 | mV | |||
FSR | Specified linear full-scale range (AINP-AINN) |
–250 | 250 | mV | ||
VCM | Operating common-mode input range | –0.16 | AVDD – 2 | V | ||
CID | Differential input capacitance | 1 | pF | |||
IIB | Input current | Inputs shorted to AGND | –82 | –60 | –48 | μA |
RID | Differential input resistance | 25 | kΩ | |||
IOS | Input offset current | ±5 | nA | |||
CMTI | Common-mode transient immunity | 15 | kV/μs | |||
CMRR | Common-mode rejection ratio | fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max |
–95 | dB | ||
fIN from 0.1 Hz to 50 kHz, VCM min ≤ VIN ≤ VCM max |
–76 | |||||
BW | Input bandwidth | 1000 | kHz | |||
DC ACCURACY | ||||||
DNL | Differential nonlinearity | Resolution: 16 bits | –0.99 | 0.99 | LSB | |
INL | Integral nonlinearity(1) | Resolution: 16 bits | –4 | ±1.5 | 4 | LSB |
EO | Offset error | Initial, at 25°C | –150 | ±40 | 150 | µV |
TCEO | Offset error thermal drift(2) | –1.3 | 1.3 | μV/°C | ||
EG | Gain error | Initial, at 25°C | –0.3 | –0.02 | 0.3 | %FS |
TCEG | Gain error thermal drift(3) | –40 | ±20 | 40 | ppm/°C | |
PSRR | Power-supply rejection ratio | VAVDD from 4.5 V to 5.5 V, at dc | 90 | dB | ||
AC ACCURACY | ||||||
SNR | Signal-to-noise ratio | fIN = 1 kHz | 82 | 85 | dB | |
SINAD | Signal-to-noise + distortion | fIN = 1 kHz | 80 | 84 | dB | |
THD | Total harmonic distortion | fIN = 1 kHz | –90 | –83 | dB | |
SFDR | Spurious-free dynamic range | fIN = 1 kHz | 83 | 92 | dB | |
DIGITAL INPUTS/OUTPUTS | ||||||
External Clock | ||||||
fCLKIN | Input clock frequency | 5 | 20 | 20.1 | MHz | |
DutyCLKIN | Duty cycle | 5 MHz ≤ fCLKIN ≤ 20.1 MHz | 40% | 50% | 60% | |
CMOS Logic Family (AMC1305M25-Q1), CMOS with Schmitt-Trigger | ||||||
IIN | Input current | DGND ≤ VIN ≤ DVDD | –1 | 1 | μA | |
CIN | Input capacitance | 5 | pF | |||
VIH | High-level input voltage | 0.7 × DVDD | DVDD + 0.3 | V | ||
VIL | Low-level input voltage | –0.3 | 0.3 × DVDD | V | ||
CLOAD | Output load capacitance | fCLKIN = 20 MHz | 30 | pF | ||
VOH | High-level output voltage | IOH = –20 µA | DVDD – 0.1 | V | ||
IOH = –4 mA | DVDD – 0.4 | |||||
VOL | Low-level output voltage | IOL = 20 µA | 0.1 | V | ||
IOL = 4 mA | 0.4 | |||||
LVDS Logic Family (AMC1305L25-Q1) | ||||||
VOD | Differential output voltage | RLOAD = 100 Ω | 250 | 350 | 450 | mV |
VOCM | Output common-mode voltage | 1.125 | 1.23 | 1.375 | V | |
IS | Output short-circuit current | 24 | mA | |||
VICM | Input common-mode voltage | VID = 100 mV | 0.05 | 1.25 | 3.25 | V |
VID | Differential input voltage | 100 | 350 | 600 | mV | |
IIN | Input current | DGND ≤ VIN ≤ 3.3 V | –24 | 0 | 20 | µA |
POWER SUPPLY | ||||||
AVDD | High-side supply voltage | 4.5 | 5.0 | 5.5 | V | |
IAVDD | High-side supply current | 6.5 | 8.2 | mA | ||
PAVDD | High-side power dissipation | 32.5 | 45.1 | mW | ||
DVDD | Controller-side supply voltage | 3.0 | 3.3 | 5.5 | V | |
IDVDD | Controller-side supply current | AMC1305L25-Q1, RLOAD = 100 Ω | 6.1 | 8.0 | mA | |
AMC1305M25-Q1, 3.0 ≤ DVDD ≤ 3.6 V, CLOAD = 5 pF |
2.7 | 4.0 | ||||
AMC1305M25-Q1, 4.5 ≤ DVDD ≤ 5.5 V, CLOAD = 5 pF |
3.2 | 5.5 | ||||
PDVDD | Controller-side power dissipation | AMC1305L25-Q1, RLOAD = 100 Ω | 20.1 | 44.0 | mW | |
AMC1305M25-Q1, 3.0 ≤ DVDD ≤ 3.6 V, CLOAD = 5 pF |
8.9 | 14.4 | ||||
AMC1305M25-Q1, 4.5 ≤ DVDD ≤ 5.5 V, CLOAD = 5 pF |
16.0 | 30.3 |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
tCLK | CLKIN, CLKIN_N clock period | 49.75 | 50 | 200 | ns |
tHIGH | CLKIN, CLKIN_N clock high time | 19.9 | 25 | 120 | ns |
tLOW | CLKIN, CLKIN_N clock low time | 19.9 | 25 | 120 | ns |
tD | Falling edge of CLKIN, CLKIN_N to DOUT, DOUT_N valid delay, CLOAD = 5 pF |
0 | 15 | ns | |
tISTART | Interface startup time (DVDD at 3.0 V min to DOUT, DOUT_N valid with AVDD ≥ 4.5 V) |
32 | 32 | CLKIN cycles | |
tASTART | Analog startup time (AVDD step up to 4.5 V with DVDD ≥ 3.0 V) | 1 | ms |
TA up to 150°C, stress voltage frequency = 60 Hz |
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AMC1305x25-Q1 |
AMC1305M05-Q1 |
AMC1305M05-Q1 |
AMC1305M05-Q1 |
AMC1305x25-Q1, 4096-point FFT, VIN = 500 mVPP |
AMC1305M05-Q1, 4096-point FFT, VIN = 500 mVPP |
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AMC1305M05-Q1 |
AMC1305x25-Q1 |
AMC1305x25-Q1 |
AMC1305x25-Q1 |
AMC1305x25-Q1, 4096-point FFT, VIN = 500 mVPP |
AMC1305M05-Q1, 4096-point FFT, VIN = 500 mVPP |