SBASAQ4A june 2023 – august 2023 AMC3311-Q1
PRODUCTION DATA
The AMC3311-Q1 is powered from the low-side power supply (VDD) with a nominal value of 3.3 V (or 5 V). Use a low-ESR decoupling capacitor of 1 nF (C8 in Figure 8-5) placed as close as possible to the VDD pin, followed by a 1-µF capacitor (C9) to filter this power-supply path.
The low-side of the DC/DC converter is decoupled with a low-ESR 100-nF capacitor (C4) positioned close to the device between the DCDC_IN and DCDC_GND pins. Use a 1-µF capacitor (C2) to decouple the high-side in addition to a low-ESR, 1-nF capacitor (C3) placed as close as possible to the device and connected to the DCDC_OUT and DCDC_HGND pins.
For the high-side LDO, use low-ESR capacitors of 1-nF (C6), placed as close as possible to the AMC3311-Q1, followed by a 100-nF decoupling capacitor (C5).
As shown in Figure 8-5, place ferrite beads in the IN and HGND signal lines for best EMI performance. For more information on reducing radiated emissions and guidelines for component selection, see the Best Practices to Attenuate AMC3301 Family Radiated Emissions EMI application note available for download at www.ti.com
Capacitors must provide adequate effective capacitance under the applicable DC bias conditions they experience in the application. Multilayer ceramic capacitors (MLCC) capacitors typically exhibit only a fraction of the nominal capacitance under real-world conditions and this factor must be taken into consideration when selecting these capacitors. This problem is especially acute in low-profile capacitors, in which the dielectric field strength is higher than in taller components. Reputable capacitor manufacturers provide capacitance versus DC bias curves that greatly simplify component selection.
Table 8-3 lists components suitable for use with the AMC3311-Q1. This list is not exhaustive. Other components can exist that are equally suitable (or better), however these listed components have been validated during the development of the AMC3311-Q1.
DESCRIPTION | PART NUMBER | MANUFACTURER | SIZE (EIA, L x W) | |
---|---|---|---|---|
VDD | ||||
C8 | 1 nF ± 10%, X7R, 50 V | 12065C102KAT2A(1) | AVX | 1206, 3.2 mm x 1.6 mm |
C0603C102K5RACTU | Kemet | 0603, 1.6 mm x 0.8 mm | ||
C9 | 1 µF ± 10%, X7R, 25 V | 12063C105KAT2A(1) | AVX | 1206, 3.2 mm x 1.6 mm |
CGA3E1X7R1E105K080AC | TDK | 0603, 1.6 mm x 0.8 mm | ||
DC/DC CONVERTER | ||||
C4 | 100 nF ± 10%, X7R, 50 V | C0603C104K5RACAUTO | Kemet | 0603, 1.6 mm x 0.8 mm |
C3 | 1 nF ± 10%, X7R, 50 V | C0603C102K5RACTU | Kemet | 0603, 1.6 mm x 0.8 mm |
C2 | 1 µF ± 10%, X7R, 25 V | CGA3E1X7R1E105K080AC | TDK | 0603, 1.6 mm x 0.8 mm |
HLDO | ||||
C1 | 100 nF ± 10%, X7R, 50 V | C0603C104K5RACAUTO | Kemet | 0603, 1.6 mm x 0.8 mm |
C5 | 100 nF ± 5%, NP0, 50 V | C3216NP01H104J160AA(1) | TDK | 1206, 3.2 mm x 1.6 mm |
100 nF ± 10%, X7R, 50 V | C0603C104K5RACAUTO | Kemet | 0603, 1.6 mm x 0.8 mm | |
C6 | 1 nF ± 10%, X7R, 50 V | 12065C102KAT2A(1) | AVX | 1206, 3.2 mm x 1.6 mm |
C0603C102K5RACTU | Kemet | 0603, 1.6 mm x 0.8 mm | ||
FERRITE BEADS | ||||
FB1,FB2 | Ferrite bead(2) | 74269244182 | Wurth Elektronik | 0402, 1.0 mm x 0.5 mm |
BLM15HD182SH1 | Murata | 0402, 1.0 mm x 0.5 mm | ||
BKH1005LM182-T | Taiyo Yuden | 0402, 1.0 mm x 0.5 mm |