SWRS223D February   2020  – February 2024 AWR2243

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Terminal Configuration and Functions
    1. 6.1 Pin Diagram
    2. 6.2 Signal Descriptions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Power-On Hours (POH)
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Power Supply Specifications
    6. 7.6 Power Consumption Summary
    7. 7.7 RF Specification
    8. 7.8 Thermal Resistance Characteristics for FCBGA Package [ABL0161]
    9. 7.9 Timing and Switching Characteristics
      1. 7.9.1 Power Supply Sequencing and Reset Timing
      2. 7.9.2 Synchronized Frame Triggering
      3. 7.9.3 Input Clocks and Oscillators
        1. 7.9.3.1 Clock Specifications
      4. 7.9.4 Multibuffered / Standard Serial Peripheral Interface (MibSPI)
        1. 7.9.4.1 Peripheral Description
          1. 7.9.4.1.1 SPI Timing Conditions
          2. 7.9.4.1.2 SPI Peripheral Mode Switching Parameters (SPICLK = input, SPISIMO = input, and SPISOMI = output)
          3. 7.9.4.1.3 SPI Peripheral Mode Timing Requirements (SPICLK = input, SPISIMO = input, and SPISOMI = output)
        2. 7.9.4.2 Typical Interface Protocol Diagram (Peripheral Mode)
      5. 7.9.5 Inter-Integrated Circuit Interface (I2C)
        1. 7.9.5.1 I2C Timing Requirements
      6. 7.9.6 LVDS Interface Configuration
        1. 7.9.6.1 LVDS Interface Timings
      7. 7.9.7 General-Purpose Input/Output
        1. 7.9.7.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      8. 7.9.8 Camera Serial Interface (CSI)
        1. 7.9.8.1 CSI Switching Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Subsystems
      1. 8.3.1 RF and Analog Subsystem
        1. 8.3.1.1 Clock Subsystem
        2. 8.3.1.2 Transmit Subsystem
        3. 8.3.1.3 Receive Subsystem
      2. 8.3.2 Host Interface
    4. 8.4 Other Subsystems
      1. 8.4.1 ADC Data Format Over CSI2 Interface
      2. 8.4.2 ADC Channels (Service) for User Application
        1. 8.4.2.1 GPADC Parameters
  10. 9 Monitoring and Diagnostic Mechanisms
  11. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Short-, Medium-, and Long-Range Radar
    3. 10.3 Imaging Radar using Cascade Configuration
    4. 10.4 Reference Schematic
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Export Control Notice
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ABL|161
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
PARAMETERS MIN MAX UNIT
VDDIN 1.2 V digital power supply –0.5 1.4 V
VIN_SRAM 1.2 V power rail for internal SRAM –0.5 1.4 V
VNWA 1.2 V power rail for SRAM array back bias –0.5 1.4 V
VIOIN I/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this supply. –0.5 3.8 V
VIOIN_18 1.8 V supply for CMOS IO –0.5 2 V
VIN_18CLK 1.8 V supply for clock module –0.5 2 V
VIOIN_18DIFF 1.8 V supply for CSI2 port –0.5 2 V
VIN_13RF1 1.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could be shorted on the board. –0.5 1.45 V
VIN_13RF2
VIN_13RF1 1-V Internal LDO bypass mode. Device supports mode where external Power Management block can supply 1 V on VIN_13RF1 and VIN_13RF2 rails. In this configuration, the internal LDO of the device would be kept bypassed. –0.5 1.4 V
VIN_13RF2
VIN_18BB 1.8-V Analog baseband power supply –0.5 2 V
VIN_18VCO supply 1.8-V RF VCO supply –0.5 2 V
RX1-4 Externally applied power on RF inputs 10 dBm
TX1-4 Externally applied power on RF outputs(3) 10 dBm
Input and output voltage range Dual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State) –0.3V VIOIN + 0.3 V
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V
(Transient Overshoot/Undershoot) or external oscillator input		 VIOIN + 20% up to
20% of signal period
CLKP, CLKM Input ports for reference crystal –0.5 2 V
Clamp current Input or Output Voltages 0.3 V above or below their respective power rails. Limit clamp current that flows through the internal diode protection cells of the I/O. –20 20 mA
TJ Operating junction temperature range –40 140 °C
TSTG Storage temperature range after soldered onto PC board –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) This value is for an externally applied signal level on the TX. Additionally, a reflection coefficient up to Gamma= 1 can be applied on the TX output.