SWRS296B July   2023  – June 2024 AWRL1432

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Terminal Configurations and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Signal Descriptions
      1.      11
      2.      12
      3.      13
      4.      14
      5.      15
      6.      16
      7.      17
      8.      18
      9.      19
      10.      20
      11.      21
      12.      22
      13.      23
      14.      24
      15.      25
      16.      26
      17.      27
    3.     28
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Power-On Hours (POH)
    4. 7.4  Recommended Operating Conditions
    5. 7.5  VPP Specifications for One-Time Programmable (OTP) eFuses
      1. 7.5.1 Recommended Operating Conditions for OTP eFuse Programming
      2. 7.5.2 Hardware Requirements
      3. 7.5.3 Impact to Your Hardware Warranty
    6. 7.6  Power Supply Specifications
      1. 7.6.1 Power Optimized 3.3V I/O Topology
      2. 7.6.2 BOM Optimized 3.3V I/O Topology
      3. 7.6.3 Power Optimized 1.8V I/O Topology
      4. 7.6.4 BOM Optimized 1.8V I/O Topology
      5. 7.6.5 System Topologies
        1. 7.6.5.1 Power Topologies
          1. 7.6.5.1.1 BOM Optimized Mode
          2. 7.6.5.1.2 Power Optimized Mode
      6. 7.6.6 Internal LDO output decoupling capacitor and layout conditions for BOM optimized topology
        1. 7.6.6.1 Single-capacitor rail
          1. 7.6.6.1.1 1.2V Digital LDO
        2. 7.6.6.2 Two-capacitor rail
          1. 7.6.6.2.1 1.2V RF LDO
          2. 7.6.6.2.2 1.2V SRAM LDO
          3. 7.6.6.2.3 1.0V RF LDO
      7. 7.6.7 Noise and Ripple Specifications
    7. 7.7  Power Save Modes
      1. 7.7.1 Typical Power Consumption Numbers
    8. 7.8  Peak Current Requirement per Voltage Rail
    9. 7.9  RF Specification
    10. 7.10 Supported Front End features
    11. 7.11 CPU Specifications
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 Timing and Switching Characteristics
      1. 7.13.1  Power Supply Sequencing and Reset Timing
      2. 7.13.2  Synchronized Frame Triggering
      3. 7.13.3  Input Clocks and Oscillators
        1. 7.13.3.1 Clock Specifications
      4. 7.13.4  MultiChannel buffered / Standard Serial Peripheral Interface (McSPI)
        1. 7.13.4.1 McSPI Features
        2. 7.13.4.2 SPI Timing Conditions
        3. 7.13.4.3 SPI—Controller Mode
          1. 7.13.4.3.1 Timing and Switching Requirements for SPI - Controller Mode
          2. 7.13.4.3.2 Timing and Switching Characteristics for SPI Output Timings—Controller Mode
        4. 7.13.4.4 SPI—Peripheral Mode
          1. 7.13.4.4.1 Timing and Switching Requirements for SPI - Peripheral Mode
          2. 7.13.4.4.2 Timing and Switching Characteristics for SPI Output Timings—Secondary Mode
      5. 7.13.5  RDIF Interface Configuration
        1. 7.13.5.1 RDIF Interface Timings
        2. 7.13.5.2 RDIF Data Format
      6. 7.13.6  LIN
      7. 7.13.7  General-Purpose Input/Output
        1. 7.13.7.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      8. 7.13.8  Controller Area Network - Flexible Data-rate (CAN-FD)
        1. 7.13.8.1 Dynamic Characteristics for the CANx TX and RX Pins
      9. 7.13.9  Serial Communication Interface (SCI)
        1. 7.13.9.1 SCI Timing Requirements
      10. 7.13.10 Inter-Integrated Circuit Interface (I2C)
        1. 7.13.10.1 I2C Timing Requirements
      11. 7.13.11 Quad Serial Peripheral Interface (QSPI)
        1. 7.13.11.1 QSPI Timing Conditions
        2. 7.13.11.2 Timing Requirements for QSPI Input (Read) Timings
        3. 7.13.11.3 QSPI Switching Characteristics
      12. 7.13.12 JTAG Interface
        1. 7.13.12.1 JTAG Timing Conditions
        2. 7.13.12.2 Timing Requirements for IEEE 1149.1 JTAG
        3. 7.13.12.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Subsystems
      1. 8.3.1 RF and Analog Subsystem
      2. 8.3.2 Clock Subsystem
      3. 8.3.3 Transmit Subsystem
      4. 8.3.4 Receive Subsystem
      5. 8.3.5 Processor Subsystem
      6. 8.3.6 Automotive Interface
      7. 8.3.7 Host Interface
      8. 8.3.8 Application Subsystem
      9. 8.3.9 Hardware Accelerator (HWA1.2) Features
        1. 8.3.9.1 Hardware Accelerator Feature Differences Between HWA1.1 and HWA1.2
    4. 8.4 Other Subsystems
      1. 8.4.1 GPADC Channels (Service) for User Application
      2. 8.4.2 GPADC Parameters
    5. 8.5 Memory Partitioning Options
    6. 8.6 Boot Modes
  10. 9 Monitoring and Diagnostics
  11. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Reference Schematic
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • AMF|102
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.13.7.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)

Table 7-27 lists the switching characteristics of output timing relative to load capacitance.

Table 7-27 Switching Characteristics for Output Timing versus Load Capacitance (CL)
PARAMETER(1)(2)TEST CONDITIONSVIOIN = 1.8VVIOIN = 3.3VUNIT
trMax rise timeSlew control = 0CL = 20 pF2.83.0ns
CL = 50 pF6.46.9
CL = 75 pF9.410.2
tfMax fall timeCL = 20 pF2.82.8ns
CL = 50 pF6.46.6
CL = 75 pF9.49.8
trMax rise timeSlew control = 1CL = 20 pF3.33.3ns
CL = 50 pF6.77.2
CL = 75 pF9.610.5
tfMax fall timeCL = 20 pF3.13.1ns
CL = 50 pF6.66.6
CL = 75 pF9.69.6
(1) Slew control, which is configured by PADxx_CFG_REG, changes behavior of the output driver (faster or slower output slew rate).
(2) The rise/fall time is measured as the time taken by the signal to transition from 10% and 90% of VIOIN voltage.