SLUSCM1A October   2017  – December 2017

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1. 7.1 EN1/EN2 Settings
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Dissipation Ratings
    6. 8.6 Electrical Characteristics
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Power On
      3. 9.3.3 Overvoltage Protection (OVP)
      4. 9.3.4 Dynamic Power-Path Management
        1. 9.3.4.1 Input Source Connected (ADAPTER or USB)
          1. 9.3.4.1.1 Input DPM Mode (VIN-DPM)
          2. 9.3.4.1.2 DPPM Mode
          3. 9.3.4.1.3 Battery Supplement Mode
        2. 9.3.4.2 Input Source Not Connected
      5. 9.3.5 Battery Charging
        1. 9.3.5.1 Charge Current Translator
        2. 9.3.5.2 Battery Detection and Recharge
        3. 9.3.5.3 Battery Disconnect (SYSOFF Input, bq24076, bq24078)
        4. 9.3.5.4 Dynamic Charge Timers (TMR Input)
        5. 9.3.5.5 Status Indicators (PGOOD, CHG)
        6. 9.3.5.6 Thermal Regulation and Thermal Shutdown
      6. 9.3.6 Battery Pack Temperature Monitoring
    4. 9.4 Device Functional Modes
      1. 9.4.1 Sleep Mode
      2. 9.4.2 Explanation of Deglitch Times and Comparator Hysteresis
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 bq2407x Charger Design Example
          1. 10.2.2.1.1 System ON/OFF (SYSOFF) (bq24076 or bq24078 only)
        2. 10.2.2.2 Calculations
          1. 10.2.2.2.1 Program the Fast Charge Current (ISET):
          2. 10.2.2.2.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.2.3 Program 6.25-hour Fast-Charge Safety Timer (TMR)
        3. 10.2.2.3 TS Function
        4. 10.2.2.4 CHG and PGOOD
        5. 10.2.2.5 Selecting IN, OUT, and BAT Pin Capacitors
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8 Specifications

8.1 Absolute Maximum Ratings(1)

over the 0°C to 125°C operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI Input Voltage IN (with respect to VSS) –0.3 28 V
BAT (with respect to VSS) –0.3 5 V
OUT, EN1, EN2, CE, TS, ISET, PGOOD, CHG, ILIM, TMR, ITERM, SYSOFF, TD (with respect to VSS) –0.3 7 V
II Input Current IN 1.6 A
IO Output Current (Continuous) OUT 5 A
BAT (Discharge mode) 5 A
BAT (Charging mode) 1.5(2) A
Output Sink Current CHG, PGOOD 15 mA
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.
(2) The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge current may not be reached.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

MIN MAX UNIT
VI IN voltage range 4.35 26 V
IN operating voltage range 4.35 6.4 V
IIN Input current, IN pin 1.5 A
IOUT Current, OUT pin 4.5 A
IBAT Current, BAT pin (Discharging) 4.5 A
ICHG Current, BAT pin (Charging) 1.5(2) A
TJ Junction Temperature –40 125 °C
RILIM Maximum input current programming resistor 1100 8000 Ω
RISET Fast-charge current programming resistor (1) 590 8900 Ω
RITERM Termination current programming resistor 0 15 kΩ
RTMR Timer programming resistor 18 72 kΩ
(1) Use a 1% tolerance resistor for RISET to avoid issues with the RISET short test when using the maximum charge current setting.
(2) The IC operational charging life is reduced to 20,000 hours, when charging at 1.5A and 125°C. The thermal regulation feature reduces charge current if the IC’s junction temperature reaches 125°C; thus without a good thermal design the maximum programmed charge current may not be reached.

8.4 Thermal Information

THERMAL METRIC(1) bq2407x UNIT
RGT (VQFN)
16 PIN
RθJA Junction-to-ambient thermal resistance 44.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 54.2 °C/W
RθJB Junction-to-board thermal resistance 17.2 °C/W
ψJT Junction-to-top characterization parameter 1.0 °C/W
ψJB Junction-to-board characterization parameter 17.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

8.5 Dissipation Ratings

PACKAGE(2) RθJA RθJC POWER RATING
TA ≤ 25°C TA = 85°C
RGT (1) 39.47°C/W 2.4°C/W 2.3 W 225 mW
(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is connected to the ground plane by a 2 × 3 via matrix.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.

8.6 Electrical Characteristics

Over junction temperature range (0° ≤ TJ ≤ 125°C) and the recommended supply voltage range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
UVLO Undervoltage lock-out VIN: 0 V → 4 V 3.2 3.3 3.4 V
Vhys Hysteresis on UVLO VIN: 4 V → 0 V 200 300 mV
VIN(DT) Input power detection threshold Input power detected when VIN > VBAT + VIN(DT)
VBAT = 3.6 V, VIN: 3.5 V → 4 V		 55 80 130 mV
Vhys Hysteresis on VIN(DT) VBAT = 3.6 V, VIN: 4 V → 3.5 V 20 mV
tDGL(PGOOD) Deglitch time, input power detected status Time measured from VIN: 0 V → 5 V 1 μs
rise-time to PGOOD = LO		 1.2 ms
VOVP Input overvoltage protection threshold VIN: 5 V → 7 V 6.4 6.6 6.8 V
Vhys Hysteresis on OVP VIN: 7 V → 5V 110 mV
tDGL(OVP) Input overvoltage blanking time (OVP fault deglitch) 50 μs
tREC Input overvoltage recovery time Time measured from VIN: 11 V → 5 V with 1 μs
fall-time to PGOOD = LO		 1.2 ms
ILIM, ISET SHORT-CIRCUIT DETECTION (CHECKED DURING STARTUP)
ISC Current source VIN > UVLO and VIN > VBAT + VIN(DT) 1.3 mA
VSC VIN > UVLO and VIN > VBAT + VIN(DT) 520 mV
QUIESCENT CURRENT
IBAT(PDWN) Sleep current into BAT pin CE = LO or HI, input power not detected,
No load on OUT pin, TJ = 85°C		 4.1 7 μA
IIN Standby current into IN pin EN1= HI, EN2=HI, VIN = 6 V, TJ < 85°C 39 50 μA
EN1= HI, EN2=HI, VIN = 10 V, TJ < 85°C 91 200
ICC Active supply current, IN pin CE = LO, VIN = 6 V, no load on OUT pin,
VBAT > VBAT(REG), (EN1, EN2) ≠ (HI, HI)		 1.5 mA
POWER PATH
VDO(IN-OUT) VIN – VOUT VIN = 4.3 V, IIN = 1 A, VBAT = 4.2 V 300 475 mV
VDO(BAT-OUT) VBAT – VOUT IOUT = 1 A, VIN = 0 V, VBAT > 3 V 50 100 mV
VO(REG) OUT pin voltage regulation VIN > VOUT + VDO(IN-OUT), VBAT < 3.2 V 3.31 3.41 3.51 V
VIN > VOUT + VDO(IN-OUT), VBAT ≥ 3.2 V VBAT + 145mV VBAT + 210mV VBAT + 275mV
IINmax Maximum input current EN1 = LO, EN2 = LO 90 95 100 mA
EN1 = HI, EN2 = LO 450 475 500
EN2 = HI, EN1 = LO KILIM/RILIM A
KILIM Maximum input current factor ILIM = 500 mA to 1.5 A 1500 1610 1720 AΩ
ILIM = 200 mA to 500 mA 1330 1525 1720
IINmax Programmable input current limit range EN2 = HI, EN1 = LO, RILIM = 8 kΩ to 1.1 kΩ 200 1500 mA
VIN-DPM Input voltage threshold when input current is reduced EN2 = LO, EN1 = X 4.35 4.5 4.63 V
VDPPM Output voltage threshold when charging current is reduced VBAT + 125mV VBAT + 100mV VBAT + 85mV V
VBSUP1 Enter battery supplement mode VBAT = 3.6 V, RILIM = 1.5 kΩ, RLOAD = 10 Ω → 2 Ω VOUT ≤ VBAT –40mV V
VBSUP2 Exit battery supplement mode VBAT = 3.6 V, RILIM = 1.5 kΩ, RLOAD = 2 Ω → 10 Ω VOUT ≥ VBAT–20mV V
VO(SC1) Output short-circuit detection threshold, power-on VIN > VUVLO and VIN > VBAT + VIN(DT) 0.8 0.9 1 V
VO(SC2) Output short-circuit detection threshold, supplement mode VBAT – VOUT > VO(SC2) indicates short-circuit VIN > VUVLO and VIN > VBAT + VIN(DT) 200 250 300 mV
tDGL(SC2) Deglitch time, supplement mode short circuit 250 μs
tREC(SC2) Recovery time, supplement mode short circuit 60 ms
BATTERY CHARGER
IBAT Source current for BAT pin short-circuit detection VBAT = 1.5 V 4 7.5 11 mA
VBAT(SC) BAT pin short-circuit detection threshold VBAT rising 1.6 1.8 2 V
VBAT(REG) Battery charge voltage ('76) 4.358 4.4 4.44 V
('78) 4.31 4.35 4.39
VLOWV Pre-charge to fast-charge transition threshold VIN > VUVLO and VIN > VBAT + VIN(DT) 2.9 3 3.1 V
tDGL1(LOWV) Deglitch time on pre-charge to fast-charge transition 25 ms
tDGL2(LOWV) Deglitch time on fast-charge to pre-charge transition 25 ms
ICHG Battery fast charge current range VBAT(REG) > VBAT > VLOWV, VIN = 5 V CE = LO,
EN1 = LO, EN2 = HI 		100 1500 mA
Battery fast charge current CE = LO, EN1= LO, EN2 = HI,
VBAT > VLOWV, VIN = 5 V, IINmax > ICHG, no load on OUT pin, thermal loop and DPPM loop not active		 KISET/RISET A
KISET Fast charge current factor 797 890 975 AΩ
IPRECHG Pre-charge current KPRECHG/RISET A
KPRECHG Pre-charge current factor 60 88 118 AΩ
ITERM Termination comparator detection threshold (internally set) CE = LO, (EN1, EN2) ≠ (LO, LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPPM loop and thermal loop not active 		0.09×ICHG 0.1×ICHG 0.11×ICHG A
CE = LO, (EN1, EN2) = (LO, LO),
VBAT > VRCH, t < tMAXCH, VIN = 5 V, DPPM loop and thermal loop not active 		0.027×ICHG 0.033×ICHG 0.040×ICHG
IBIAS(ITERM) Current for external termination-setting resistor VIN > VUVLO and VIN > VBAT + VIN(DT) 72 75 78 μA
tDGL(TERM) Deglitch time, termination detected 25 ms
VRCH Recharge detection threshold VIN > VUVLO and VIN > VBAT + VIN(DT) VBAT(REG) –140mV VBAT(REG) –100mV VBAT(REG) –60mV V
tDGL(RCH) Deglitch time, recharge threshold detected 62.5 ms
tDGL(NO-IN) Delay time, input power loss to OUT LDO turn-off VBAT = 3.6 V. Time measured from
VIN: 5 V → 3 V 1 μs fall-time		 20 ms
IBAT(DET) Sink current for battery detection VBAT = 2.5 V 5 7.5 10 mA
tDET Battery detection timer BAT high or low 250 ms
BATTERY CHARGING TIMERS
tPRECHG Pre-charge safety timer value TMR = floating 1440 1800 2160 s
tMAXCHG Charge safety timer value TMR = floating 14400 18000 21600 s
tPRECHG Pre-charge safety timer value 18 kΩ < RTMR < 72 kΩ RTMR × KTMR s
tMAXCHG Charge safety timer value 18 kΩ < RTMR < 72 kΩ 10×R TMR ×KTMR s
KTMR Timer factor 36 48 60 s/kΩ
BATTERY-PACK NTC MONITOR(1)
INTC NTC bias current VIN > UVLO and VIN > VBAT + VIN(DT) 72 75 80 μA
VHOT High temperature trip point Battery charging, VTS Falling 270 300 330 mV
VHYS(HOT) Hysteresis on high trip point Battery charging, VTS Rising from VHOT 30 mV
VCOLD Low temperature trip point Battery charging, VTS Rising 2000 2100 2200 mV
VHYS(COLD) Hysteresis on low trip point Battery charging, VTS Falling from VCOLD 300 mV
tDGL(TS) Deglitch time, pack temperature fault detection TS fault detected to charger disable 50 ms
VDIS(TS) TS function disable threshold TS unconnected VIN - 200mV V
THERMAL REGULATION
TJ(REG) Temperature regulation limit 125 °C
TJ(OFF) Thermal shutdown temperature TJ Rising 155 °C
TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C
LOGIC LEVELS ON EN1, EN2, CE, SYSOFF, TD
VIL Logic LOW input voltage 0 0.4 V
VIH Logic HIGH input voltage 1.4 6 V
IIL Input sink current VIL= 0 V 1 μA
IIH Input source current VIH= 1.4 V 10 μA
LOGIC LEVELS ON PGOOD, CHG
VOL Output LOW voltage ISINK = 5 mA 0.4 V
(1) These numbers set trip points of 0°C and 50°C while charging, with 3°C hysteresis on the trip points, with a Vishay Type 2 curve NTC with an R25 of 10 kΩ.

8.7 Typical Characteristics

VIN = 6 V, EN1=1, EN2=0, bq24078 application circuit, TA = 25°C, unless otherwise noted.
bq24076 bq24078 ibat_v_temp_luscm2.gif
Figure 1. Thermal Regulation
bq24076 bq24078 do2_tj_luscm1.gif
IL = 1 A
Figure 3. Dropout Voltage vs Temperature
No Input Supply
bq24076 bq24078 vo_tj_luscm1.gif
VIN = 5 V, VBAT = 3.5 V, IL = 1 A
Figure 5. bq24078
Output Regulation Voltage vs Temperature
bq24076 bq24078 vbat_tj_luscm1.gif
Figure 7. bq24076
BAT Regulation Voltage vs Temperature
bq24076 bq24078 ibat_vbat_luscm1.gif
RISET = 900 Ω
Figure 9. Fastcharge Current vs Battery Voltage
bq24076 bq24078 ibat3_vbat_luscm1.gif
RISET = 900 Ω
Figure 11. Precharge Current vs Battery Voltage
bq24076 bq24078 do_tj_luscm1.gif
IL = 1 A
Figure 2. Dropout Voltage vs Temperature
bq24076 bq24078 vo_vbat_luscm1.gif
VIN = 5 V
Figure 4. bq24078
Output Regulation Voltage vs Battery Voltage
bq24076 bq24078 vo2_tj_luscm1.gif
VIN = 5 V, IL = 1 A
Figure 6. bq24076
Output Regulation Voltage vs Temperature
bq24076 bq24078 ovp2_tj_luscm1.gif
6.6 V
Figure 8. bq24076/78
Overvoltage Protection Threshold vs Temperature
bq24076 bq24078 ibat2_vbat_luscm1.gif
RISET = 3 kΩ
Figure 10. Fastcharge Current vs Battery Voltage
bq24076 bq24078 ibat4_vbat_luscm1.gif
RISET = 3 kΩ
Figure 12. Precharge Current vs Battery Voltage