SLUSCB6B May   2015  – June 2017

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Battery Preconditioning
      2. 7.3.2  Battery Fast-Charge Constant Current
      3. 7.3.3  Charge-Current Monitor
      4. 7.3.4  Battery Fast-Charge Voltage Regulation
      5. 7.3.5  Charge Termination Detection and Recharge
      6. 7.3.6  Charge Status Outputs
      7. 7.3.7  PG Output (bq24080-Q1)
      8. 7.3.8  Charge-Enabled (CE) Input (bq24080-Q1)
      9. 7.3.9  Timer Enabled (TE) Input (bq24081-Q1)
      10. 7.3.10 Temperature Qualification (bq24081-Q1)
      11. 7.3.11 Timer Fault and Recovery
        1. 7.3.11.1 Condition Number 1
        2. 7.3.11.2 Condition Number 2
    4. 7.4 Device Functional Modes
      1. 7.4.1 Sleep Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Calculations
        2. 8.2.2.2 Battery Temperature Sense (bq24081-Q1):
        3. 8.2.2.3 STAT Pins (All Devices) and PG Pin (bq24080-Q1):
        4. 8.2.2.4 Selecting Input and Output Capacitors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
    2. 11.2 Documentation Support
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
bq24080-Q1, bq24081-Q1 UNIT
MIN MAX
Input voltage(2) IN, CE, ISET, OUT, PG, STAT1, STAT2, TE, TS –0.3 7 V
Output sink/source current STAT1, STAT2, PG 15 mA
Output current OUT 1.5 A
Operating free-air temperature range, TA –40 125 °C
Junction temperature range, TJ °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to VSS.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 4.5 6.5 V
TJ Operating junction temperature range –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) bq24080-Q1,
bq24081-Q1		 UNIT
DRC (10 PINS)
RθJA Junction-to-ambient thermal resistance 44.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.4 °C/W
RθJB Junction-to-board thermal resistance 19.7 °C/W
ψJT Junction-to-top characterization parameter 0.7 °C/W
ψJB Junction-to-board characterization parameter 19.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over –40°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENT
ICC(VCC) VCC current VCC > VCC(min) 1.2 2 mA
ICC(SLP) Sleep current Sum of currents into OUT pin,
VCC < V(SLP) 		2 5 μA
ICC(STBY) Standby current CE = High, 0°C ≤ TJ ≤ 85°C 150
IIB(OUT) Input current on OUT pin Charge DONE, VCC > VCC(MIN) 1 5
VOLTAGE REGULATION VO(REG) + V(DO−MAX) ≤ VCC, I(TERM) < IO(OUT) ≤ 1 A
VO(REG) Output voltage 4.2 V
Voltage regulation accuracy TA = 25°C −0.35% 0.35%
−1% 1%
V(DO) Dropout voltage (V(IN) − V(OUT)) VO(OUT) = VO(REG), IO(OUT) = 1 A
VO(REG) + V(DO)) ≤ VCC 		350 500 mV
CURRENT REGULATION
IO(OUT) Output current range(1) VI(OUT) > V(LOWV),
VI(IN) − VI(OUT) > V(DO),
VCC ≥ 4.5 V		 20 1000 mA
V(SET) Output current set voltage Voltage on ISET pin, VCC ≥ 4.5 V,
VI ≥ 4.5 V, VI(OUT) > V(LOWV),
VI − VI(OUT) > V(DO) 		2.463 2.5 2.538 V
K(SET) Output current set factor 50 mA ≤ IO(OUT) ≤ 1 A 307 322 337
10 mA ≤ IO(OUT) < 50 mA 296 320 346
1 mA ≤ IO(OUT) < 10 mA 246 320 416
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
V(LOWV) Precharge to fast-charge transition threshold Voltage on OUT pin 2.8 3 3.2 V
IO(PRECHG) Precharge range(2) 0 V < VI(OUT) < V(LOWV), t < t(PRECHG) 2 100 mA
V(PRECHG) Precharge set voltage Voltage on ISET pin,
VO(REG) = 4.2 V,
0 V < VI(OUT) > V(LOWV), t < t(PRECHG) 		240 255 270 mV
TERMINATION DETECTION
I(TERM) Charge termination detection range(3) VI(OUT) > V(RCH), t < t(TRMDET) 2 100 mA
V(TERM) Charge termination detection set voltage Voltage on ISET pin,
VO(REG) = 4.2 V,
VI(OUT) > V(RCH), t < t(TRMDET) 		235 250 265 mV
BATTERY RECHARGE THRESHOLD
V(RCH) Recharge threshold VO(REG) – 0.115 VO(REG) − 0.10 VO(REG) − 0.085 V
STAT1, STAT2, and PG OUTPUTS
VOL Low-level output saturation voltage IO = 5 mA 0.25 V
CE and TE INPUTS
VIL Low-level input voltage 0 0.4 V
VIH High-level input voltage 1.4
IIL Low-level input current –1 μA
IIH High-level input current 1
TIMERS
I(FAULT) Timer fault recovery current 200 μA
SLEEP COMPARATOR
V(SLP) Sleep-mode entry threshold voltage 2.3 V ≤ VI(OUT) ≤ VO(REG) VCC ≤ VI(OUT)
+ 80 mV		 V
V(SLPEXIT) Sleep-mode exit threshold voltage VCC ≥ VI(OUT)
+ 190
THERMAL SHUTDOWN THRESHOLDS
T(SHTDWN) Thermal trip threshold TJ increasing 165 °C
Thermal hysteresis 15
UNDERVOLTAGE LOCKOUT
UVLO Undervoltage lockout Decreasing VCC 2.4 2.5 2.6 V
Hysteresis 27 mV
TEMPERATURE SENSE COMPARATOR (bq24081-Q1)
V(TS1) High-voltage threshold 2.475 2.5 2.525 V
V(TS2) Low-voltage threshold 0.485 0.5 0.515
I(TS) TS pin current source 96 102 108 μA
(1) See Equation 2.
(2) See Equation 1.
(3) See Equation 4.

6.6 Timing Requirements

MIN NOM MAX UNIT
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
Deglitch time for fast-charge to precharge transition VCC(MIN) ≥ 4.5 V, tFALL = 100 ns,
10-mV overdrive,
VI(OUT) decreasing below threshold		 250 375 500 ms
TERMINATION DETECTION
tTRMDET Deglitch time for termination detection VCC(MIN) ≥ 4.5 V, tFALL = 100 ns
charging current decreasing below
10-mV overdrive		 250 375 500 ms
BATTERY RECHARGE THRESHOLD
t(DEGL) Deglitch time for recharge detect VCC(MIN) ≥ 4.5 V, tFALL = 100 ns
decreasing below or increasing above threshold, 10-mV overdrive		 250 375 500 ms
TIMERS
t(PRECHG) Precharge time 1,584 1,800 2,016 s
t(CHG) Charge time 22,176 25,200 28,224 s
SLEEP COMPARATOR
Sleep-mode entry deglitch time V(IN) decreasing below threshold,
tFALL = 100 ns, 10-mV overdrive		 250 375 500 ms
TEMPERATURE SENSE COMPARATOR (bq24081-Q1)
t(DEGL) Deglitch time for temperature fault 250 375 500 ms

6.7 Typical Characteristics

bq24080-Q1 bq24081-Q1 drop_v_tj_lvs563.gif Figure 1. Dropout Voltage vs Junction Temperature
bq24080-Q1 bq24081-Q1 c002_lus698.png Figure 3. Charge Enable Power-Up Sequence
(CE = High-to-Low)
bq24080-Q1 bq24081-Q1 c004_lus698.png
No battery – In termination deglitch prior to STAT1 going high. VOUT (VBAT) cycling between charge and done prior to screen capture
Stat1 goes high – In done state
2-V battery is inserted during the charge done state.
Charging is initiated – STAT1 goes low and charge current is applied.
Battery is removed – VOUT goes into regulation, IOUT goes to zero, and termination deglitch timer starts running (same as state 1).
Deglitch timer expires – charge done is declared.
Figure 5. Battery Hot-Plug and Removal Power Sequence
bq24080-Q1 bq24081-Q1 c001_lus698.png
Figure 2. VIN Hot-Plug Power-Up Sequence
bq24080-Q1 bq24081-Q1 c003_lus698.png Figure 4. Battery Hot-Plug During Charging Phase