INPUT CURRENTS |
IIN |
Supply current from IN |
VDPM < VIN < VOVP AND VIN > VBAT+VSLP PWM switching, CE Enable |
|
13 |
|
mA |
VDPM < VIN < VOVP AND VIN > VBAT+VSLP PWM switching, CE Disable |
|
|
5 |
VIN= 5.5V, 0°C< TJ < 85°C, High-Z Mode |
|
170 |
225 |
μA |
IBAT |
Battery discharge current in high impedance mode, (BAT, SW, SYS) |
0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 0V or 5V, High-Z Mode |
|
16 |
22 |
μA |
Battery discharge current in SYSOFF mode |
0°C< TJ < 85°C, VBAT = 4.2 V, VIN < UVLO, SYSOFF Mode |
|
|
1 |
POWER-PATH MANAGEMENT |
VSYSREG |
System Regulation Voltage |
MINSYS stage (no DPM or DPPM) |
–1% |
3.52 |
1% |
V |
MINSYS stage (DPM or DPPM active) |
–1.50% |
VMINSYS
–200mV |
1.50% |
BATREG stage |
|
VBAT
+ ICHG Ron |
|
SYSREG stage |
VBATREG
+2.1% |
VBATREG
+3.1% |
VBATREG
+4.1% |
VSPLM |
Enter supplement mode voltage threshold |
VBAT = 3.6V |
|
VBAT – 40mV |
|
V |
ISPLM |
Exit supplement mode current threshold |
VBAT = 3.6V |
|
20 |
|
mA |
tDGL(SC1) |
Deglitch Time, OUT Short Circuit during Discharge or Supplement Mode |
Measured from (VBAT – VSYS) = 300 mV |
|
740 |
|
μs |
tREC(SC1) |
Recovery Time, OUT Short Circuit during Discharge or Supplement Mode |
|
|
64 |
|
ms |
BATTERY CHARGER |
RON(BAT-SYS) |
Internal battery charger MOSFET on-resistance |
Measured from BAT to SYS, VBAT = 4.2V (WCSP) |
|
20 |
30 |
mΩ |
Measured from BAT to SYS, VBAT = 4.2V (QFN) |
|
30 |
40 |
VBATREG |
I2C host mode |
Operating in voltage regulation, Programmable Range |
3.5 |
|
4.44 |
V |
SA mode or I2C default mode |
|
|
4.2 |
|
|
Voltage Regulation Accuracy |
TJ = 25°C |
–0.5% |
|
0.5% |
|
TJ = 0°C to 125°C |
–0.75% |
|
0.75% |
|
|
ICHG |
Fast Charge Current Range |
VLOWV ≤ VBAT < VBAT(REG) |
500 |
|
2000 |
mA |
|
Fast Charge Current Accuracy |
I2C mode |
–7% |
|
7% |
|
ICHG-LOW |
Low Charge Current Setting |
Set via I2C |
297 |
330 |
363 |
mA |
KISET |
Programmable Fast Charge Current Factor |
|
232.5 |
250 |
267.5 |
AΩ |
VISET |
Maximum ISET pin voltage (in regulation) |
|
|
0.42 |
|
V |
RISET-SHORT |
Short circuit resistance threshold |
|
45 |
55 |
75 |
Ω |
VLOWV |
Pre-charge to fast charge threshold |
Rising |
2.9 |
3 |
3.1 |
V |
Hysteresis for VLOWV |
Battery voltage falling |
|
100 |
|
mV |
IPRECHG |
Pr-charge current (VBATUVLO < VBAT < VLOWV) |
Ipre-chg is a precentile of the external fast charge settings. |
8 |
10 |
12 |
% |
tDGL(LOWV) |
Deglitch time for pre-charge to fast charge transition |
|
|
32 |
|
ms |
VBAT_UVLO |
Battery Under voltage lockout threshold |
VBAT rising |
2.37 |
2.5 |
2.63 |
V |
|
Battery UVLO hysteresis |
|
|
200 |
|
mV |
VBATSHRT |
Trickle charge to pre-charge threshold |
|
1.9 |
2 |
2.1 |
V |
|
Hysteresis for VBATSHRT |
Battery voltage falling |
|
100 |
|
mV |
IBATSHRT |
Trickle charge mode charge current (VBAT < VBATSHRT) |
|
25 |
35 |
50 |
mA |
tDGL(BATSHRT) |
Deglitch time for trickle charge to pre-charge transition |
|
|
256 |
|
us |
ITERM |
Termination Current Threshold |
Termination current on SA only |
|
10 |
|
%ICHG |
Termination Current Threshold Tolerance |
|
–10% |
|
10% |
|
tDGL(TERM) |
Deglitch time for charge termination |
Both rising and falling, 2-mV over-drive, tRISE, tFALL = 100 ns |
|
64 |
|
ms |
VRCH |
Recharge threshold voltage |
Below VBATREG |
70 |
115 |
160 |
mV |
tDGL(RCH) |
Deglitch time |
VBAT falling below VRCH, tFALL = 100 ns |
|
32 |
|
ms |
BATTERY DETECTION |
VBATREG_HI |
Battery Detection High Regulation Voltage |
Same as VBATREG |
|
VBATREG |
|
V |
VBATREG_LO |
Battery Detection Low Regulation Voltage |
360 mV offset from VBATREG |
|
VBATREG
–480mV |
|
V |
VBATDET Hi |
Battery detection comparator |
VBATREG = VBATREG_HI |
|
VBATREG
–120mV |
|
V |
VBATDET LO |
Battery detection comparator |
VBATREG = VBATREG_LO |
|
VBATREG
+120mV |
|
V |
IDETECT |
Battery Detection Current Sink |
Always on during battery detection |
|
7.5 |
|
mA |
tDETECT |
Battery detection time |
For both VBATREG_HI and VBATREG_LO |
|
32 |
|
ms |
Tsafe |
Safety Timer Accuracy |
|
–10% |
|
+10% |
|
INPUT PROTECTION |
IIN |
Input current limiting |
IIN_LIMIT = 100 mA |
90 |
95 |
100 |
mA |
IIN_LIMIT = 150 mA |
135 |
142.5 |
150 |
|
IIN_LIMIT = 500 mA |
450 |
475 |
500 |
|
IIN_LIMIT = 900 mA |
810 |
860 |
910 |
|
IIN_LIMIT = 1500 mA |
1400 |
1475 |
1550 |
|
IIN_LIMIT = 2000 mA |
1850 |
1950 |
2050 |
|
IIN_LIMIT = External |
|
|
ILIM |
Maximum input current limit programmable range for IN input |
|
500 |
|
2000 |
mA |
KILIM |
Maximum input current factor for IN input |
ILIM = 500 mA to 2.0 A |
240 |
270 |
300 |
AΩ |
VILIM |
Maximum ILIM pin voltage (in regulation) |
|
|
0.42 |
|
V |
IIN /IILIM |
Ratio between input current and the ILIM pin current in external control or stand alone mode |
External ILIM control or stand alone |
|
540 |
|
A/A |
RILIM-SHORT |
Short circuit resistance threshold |
|
|
55 |
75 |
Ω |
VIN_DPM |
VIN_DPM threshold range |
SA mode |
4.2 |
|
10 |
V |
I2C mode |
4.2 |
|
4.76 |
VIN_DPM threshold for USB Input in SA mode |
USB100, USB150, USB500, USB900, current limit selected. Also I2C register default. |
4.27 |
4.36 |
4.45 |
VIN_DPM threshold with adaptor current limit and VDPM shorted to GND |
Must set to external resistor settings via the EN1/EN2 pins or the I2C register interface. |
VIN_DPM
.
–2% |
VIN_DPM |
VIN_DPM
.
+2% |
VIN_DPM threshold Accuracy |
Both I2C and SA mode |
–2% |
|
2% |
|
VREF_DPM |
DPM regulation voltage |
External resistor setting only |
1.15 |
1.2 |
1.25 |
V |
VDPM_SHRT |
VIN_DPM short threshold |
If VDPM is shorted to ground, VIN_DPM threshold will use internal default value |
|
0.3 |
|
V |
VUVLO |
IC active threshold voltage |
VIN rising |
3.15 |
3.35 |
3.5 |
V |
IC active hysteresis |
VIN falling from above VUVLO |
|
175 |
|
mV |
VSLP |
Sleep-mode entry threshold, VIN-VBAT |
2.0 V ≤ VBAT ≤ VBATREG, VIN falling |
0 |
50 |
100 |
mV |
Sleep-mode exit hysteresis, VIN-VBAT |
2.0 V ≤ VBAT ≤ VBATREG |
40 |
100 |
160 |
mV |
tDGL(SLP) |
Deglitch time for IN rising above VIN+VSLP_EXIT |
Rising voltage, 2-mV over drive, tRISE = 100 ns |
|
32 |
|
ms |
VOVP |
Input supply OVP threshold voltage |
IN rising |
Input OVP –200mV |
Input OVP |
Input OVP +200mV |
V |
VOVP hysteresis |
IN falling from VOVP |
|
100 |
|
mV |
tDGL(OVP) |
Deglitch time for IN Rising above VOVP |
IN rising voltage, tRISE = 100 ns |
|
32 |
|
ms |
VBOVP |
Battery OVP threshold voltage |
VBAT threshold over VBATREG to turn off charger during charge |
102.5 |
105 |
107.5 |
% VBATREG |
VBOVP hysteresis |
Lower limit for VBAT falling from above VBOVP |
|
1 |
|
% VBATREG |
tDGL(BOVP) |
BOVP Deglitch |
Battery entering/exiting BOVP |
|
1 |
|
ms |
PWM CONVERTER |
RON(BLK) |
Internal blocking MOSFET on-resistance |
Measured from IN to PMID (WCSP & QFN) |
|
60 |
100 |
mΩ |
RON(HS) |
Internal high-side MOSFET on-resistance |
Measured from PMID to SW (WCSP & QFN) |
|
100 |
150 |
mΩ |
RON(LS) |
Internal low-side MOSFET on-resistance |
Measured from SW to PGND (WCSP & QFN) |
|
110 |
165 |
mΩ |
ICbC |
Cycle-by-cycle current limit |
VSYS shorted |
2.6 |
3.2 |
3.8 |
A |
fOSC |
Oscillator frequency |
|
2.7 |
3 |
3.3 |
MHz |
DMAX |
Maximum duty cycle |
|
|
95% |
|
|
DMIN |
Minimum duty cycle |
|
0% |
|
|
|
TSHTDWN |
Thermal trip |
|
|
150 |
|
°C |
Thermal hysteresis |
|
|
10 |
|
|
TREG |
Thermal regulation threshold |
Charge current begins to cut off |
|
125 |
|
|
LDO (LINEAR DROPOUT) |
VLDO |
LDO Output Voltage |
bq24250 |
VIN = 5.5 V, ILDO = 0 to 50 mA |
4.65 |
4.85 |
5.04 |
V |
bq24251 and bq24253 |
4.65 |
4.95 |
5.25 |
ILDO |
Maximum LDO Output Current |
|
50 |
|
|
mA |
VDO |
LDO Dropout Voltage (VIN – VLDO) |
VIN = 5.0 V, ILDO = 50 mA |
|
200 |
300 |
mV |
BATTERY-PACK NTC MONITOR (1) |
VHOT |
High temperature threshold |
VTS falling |
29.6 |
30 |
30.4 |
% VLDO |
VHYS(HOT) |
Hysteresis on high threshold |
VTS rising |
|
1 |
|
VWARM |
Warm temperature threshold |
VTS falling |
37.9 |
38.3 |
38.7 |
VHYS(WARM) |
Hysteresis on warm temperature threshold |
VTS rising |
|
1 |
|
VCOOL |
Cool temperature threshold |
VTS rising |
56.1 |
56.5 |
56.9 |
VHSY(COOL) |
Hysteresis on cool temperature threshold |
VTS falling |
|
1 |
|
VCOLD |
Low temperature threshold |
VTS rising |
59.6 |
60 |
60.4 |
VHYS(COLD) |
Hysteresis on low threshold |
VTS falling |
|
1 |
|
VFRZ |
Freeze temperature threshold |
VTS rising |
62 |
62.5 |
63 |
VHYS(FRZ) |
Hysteresis on freeze threshold |
VTS falling |
|
1 |
|
VTS_DIS |
TS disable threshold |
|
70 |
|
73 |
tDGL(TS) |
Deglitch time on TS change |
|
|
32 |
|
ms |
INPUTS (EN1, EN2, EN2, CE, CE1, CE2, BATREG, SCL, SDA, DBP) |
VIH |
Input high threshold |
|
1 |
|
|
V |
VIL |
Input low threshold |
|
|
|
0.4 |
V |
STATUS OUTPUTS (CHG, PG, STAT, INT, BATRDY) |
VOL |
Low-level output saturation voltage |
IO = 5 mA, sink current |
|
|
0.4 |
V |
IIH |
High-level leakage current |
Hi-Z and 5V applies |
|
|
1 |
µA |
TIMERS |
tSAFETY |
45 min safety timer |
|
|
2700 |
|
s |
6 hr safety timer |
|
|
21600 |
|
9 hr safety timer |
|
|
32400 |
|
tWATCH-DOG |
Watch dog timer |
|
|
50 |
|
s |
D+/D– DETECTION |
IDP_SRC |
D+ current source for DCD |
DCD |
7 |
|
13 |
µA |
RDM_DWN |
D– pull-down resistance for DCD |
DCD |
14.25 |
|
24.8 |
kΩ |
VDP_LOW |
D+ low comparator threshold for DCD |
DCD |
0.85 |
0.9 |
0.95 |
V |
VDP_SRC |
D+ source voltage for Primary Detection |
Primary Detection |
0.5 |
0.6 |
0.7 |
V |
IDP_SRC_PD |
D+ source voltage output current for Primary Detection |
Primary Detection |
200 |
|
|
µA |
IDM_SINK |
D– sink current for Primary Detection |
Primary Detection |
50 |
100 |
150 |
µA |
VDAT_REF |
Primary Detection threshold |
Primary Detection |
250 |
325 |
400 |
mV |
VLGC |
Primary Detection threshold |
Primary Detection |
0.85 |
0.9 |
0.95 |
V |
VDM_SRC |
D- source voltage for Secondary Detection |
Secondary Detection |
0.5 |
0.6 |
0.7 |
V |
IDM_SRC_PD |
D- source voltage output current for Secondary Detection |
Secondary Detection |
200 |
|
|
µA |
IDP_SINK |
D+ sink current for Secondary Detection |
Secondary Detection |
50 |
100 |
150 |
µA |
VDAT_REF |
Secondary Detection threshold |
Secondary Detection |
250 |
325 |
400 |
mV |
VATT_LO |
Apple/TomTom detection low threshold |
Apple/TomTom Detection |
1.8 |
1.85 |
1.975 |
V |
VATT_HI |
Apple/TomTom detection high threshold |
Apple/TomTom Detection |
3.2 |
3.5 |
3.8 |
V |
CI |
Input Capacitance |
D– , switch open |
|
4.5 |
|
pF |
D+, switch open |
|
4.5 |
|
ID_LKG |
Leakage Current into D+/D– |
D–, switch open |
–1 |
|
1 |
µA |
D+, switch open |
–1 |
|
1 |