SLUSBP6D september   2013  – april 2023 BQ24296 , BQ24297

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings #GUID-BA2DB09A-966C-4324-B633-1AB165FC219B/SLUSBC14058
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Device Power Up
        1. 9.3.1.1 Power-On-Reset (POR)
        2. 9.3.1.2 Power Up from Battery without DC Source
          1. 9.3.1.2.1 BATFET Turn Off
          2. 9.3.1.2.2 Shipping Mode
        3. 9.3.1.3 Power Up from DC Source
          1. 9.3.1.3.1 REGN LDO
          2. 9.3.1.3.2 Input Source Qualification
          3. 9.3.1.3.3 Input Current Limit Detection
          4. 9.3.1.3.4 D+/D– Detection Sets Input Current Limit (BQ24297)
          5. 9.3.1.3.5 PSEL/OTG Pins Set Input Current Limit
          6. 9.3.1.3.6 HIZ State with 100mA USB Host
          7. 9.3.1.3.7 Force Input Current Limit Detection
        4. 9.3.1.4 Converter Power-Up
        5. 9.3.1.5 Boost Mode Operation from Battery
      2. 9.3.2 Power Path Management
        1. 9.3.2.1 Narrow VDC Architecture
        2. 9.3.2.2 Dynamic Power Management
        3. 9.3.2.3 Supplement Mode
      3. 9.3.3 Battery Charging Management
        1. 9.3.3.1 Autonomous Charging Cycle
        2. 9.3.3.2 Battery Charging Profile
        3. 9.3.3.3 Thermistor Qualification
          1. 9.3.3.3.1 Cold/Hot Temperature Window
        4. 9.3.3.4 Charging Termination
          1. 9.3.3.4.1 Termination When REG02[0] = 1
        5. 9.3.3.5 Charging Safety Timer
          1. 9.3.3.5.1 Safety Timer Configuration Change
        6. 9.3.3.6 USB Timer When Charging from USB100mA Source
      4. 9.3.4 Status Outputs ( PG, STAT, and INT)
        1. 9.3.4.1 Power Good Indicator ( PG) (BQ24296)
        2. 9.3.4.2 Charging Status Indicator (STAT)
        3. 9.3.4.3 Interrupt to Host (INT)
      5. 9.3.5 Protections
        1. 9.3.5.1 Input Current Limit on ILIM
        2. 9.3.5.2 Thermal Regulation and Thermal Shutdown
        3. 9.3.5.3 Voltage and Current Monitoring in Buck Mode
          1. 9.3.5.3.1 Input Over-Voltage (ACOV)
          2. 9.3.5.3.2 System Over-Voltage Protection (SYSOVP)
        4. 9.3.5.4 Voltage and Current Monitoring in Boost Mode
          1. 9.3.5.4.1 Over-Current Protection
          2. 9.3.5.4.2 VBUS Over-Voltage Protection
        5. 9.3.5.5 Battery Protection
          1. 9.3.5.5.1 Battery Over-Voltage Protection (BATOVP)
          2. 9.3.5.5.2 Battery Short Protection
          3. 9.3.5.5.3 System Over-Current Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Host Mode and Default Mode
        1. 9.4.1.1 Plug in USB100mA Source with Good Battery
        2. 9.4.1.2 USB Timer When Charging from USB100mA Source
    5. 9.5 Programming
      1. 9.5.1 Serial Interface
        1. 9.5.1.1 Data Validity
        2. 9.5.1.2 START and STOP Conditions
        3. 9.5.1.3 Byte Format
        4. 9.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 9.5.1.5 Target Address and Data Direction Bit
          1. 9.5.1.5.1 Single Read and Write
          2. 9.5.1.5.2 Multi-Read and Multi-Write
    6. 9.6 Register Map
      1. 9.6.1 I2C Registers
        1. 9.6.1.1  Input Source Control Register REG00 [reset = 00110xxx, or 3x]
        2. 9.6.1.2  Power-On Configuration Register REG01 [reset = 00011011, or 0x1B]
        3. 9.6.1.3  Charge Current Control Register REG02 [reset = 01100000, or 60]
        4. 9.6.1.4  Pre-Charge/Termination Current Control Register REG03 [reset = 00010001, or 0x11]
        5. 9.6.1.5  Charge Voltage Control Register REG04 [reset = 10110010, or 0xB2]
        6. 9.6.1.6  Charge Termination/Timer Control Register REG05 [reset = 10011010, or 0x9A]
        7. 9.6.1.7  Boost Voltage/Thermal Regulation Control Register REG06 [reset = 01110011, or 0x73]
        8. 9.6.1.8  Misc Operation Control Register REG07 [reset = 01001011, or 4B]
        9. 9.6.1.9  System Status Register REG08
        10. 9.6.1.10 New Fault Register REG09
        11. 9.6.1.11 Vender / Part / Revision Status Register REG0A
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
        2. 10.2.2.2 Input Capacitor
        3. 10.2.2.3 Output Capacitor
      3. 10.2.3 Application Performance Plots
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Electrical Characteristics

VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
QUIESCENT CURRENTS
IBAT Battery discharge current (BAT, SW, SYS) VVBUS < VUVLO, VBAT = 4.2 V, leakage between BAT and VBUS 5 µA
High-Z Mode, or no VBUS, BATFET disabled (REG07[5] = 1), –40°C – 85°C 16 20 µA
High-Z Mode, or no VBUS, BATFET enabled (REG07[5] = 0), –40°C – 85°C 32 55 µA
IVBUS Input supply current (VBUS) VVBUS = 5 V, High-Z mode, No battery 15 30 µA
VVBUS > VUVLO, VVBUS > VBAT, converter not switching 1.5 3 mA
VVBUS > VUVLO, VVBUS > VBAT, converter switching, VBAT = 3.2 V, ISYS = 0 A 4 mA
VVBUS > VUVLO, VVBUS > VBAT, converter switching, charge disable, VBAT = 3.8 V, ISYS = 100 µA 3.5 mA
IBOOST Battery discharge current in boost mode VBAT = 4.2 V, Boost mode, IVBUS = 0 A, converter switching 3.5 mA
VBUS/BAT POWER UP
VVBUS_OP VBUS operating voltage 3.9 6.2 V
VVBUS_UVLOZ VBUS for active I2C, no battery VVBUS rising 3.6 V
VSLEEP Sleep mode falling threshold VVBUS falling, VVBUS-VBAT 35 80 120 mV
VSLEEPZ Sleep mode rising threshold VVBUS rising, VVBUS-VBAT 170 250 350 mV
VACOV VBUS over-voltage rising threshold VVBUS rising 6.2 6.4 6.6 V
VACOV_HYST VBUS over-voltage falling hysteresis VVBUS falling 250 mV
VBAT_UVLOZ Battery for active I2C, no VBUS VBAT rising 2.3 V
VBAT_DPL Battery depletion threshold VBAT falling 2.4 2.6 V
VBAT_DPL_HY Battery depletion rising hysteresis VBAT rising 200 mV
VVBUSMIN Bad adapter detection threshold VVBUS falling 3.8 V
IBADSRC Bad adapter detection current source 30 mA
POWER PATH MANAGEMENT
VSYS_MAX Typical system regulation voltage Isys = 0 A, BATFET (Q4) off, VBAT up to 4.2 V,
REG01[3:1] = 101, VSYSMIN = 3.5 V		 3.5 4.35 V
VSYS_MIN System voltage outpu REG01[3:1] = 101, VSYSMIN = 3.5 V 3.5 3.65 V
RON(RBFET) Top reverse blocking MOSFET on-resistance between VBUS and PMIID 28 41 mΩ
RON(HSFET) Internal top switching MOSFET on-resistance between PMID and SW TJ = –40°C – 85°C 39 51 mΩ
TJ = -40°C – 125°C 39 58
RON(LSFET) Internal bottom switching MOSFET on-resistance between SW and PGND TJ = –40°C – 85°C 61 82 mΩ
TJ = -40°C – 125°C 61 90
VFWD BATFET forward voltage in supplement mode BAT discharge current 10mA 30 mV
VSYS_BAT SYS/BAT comparator VSYS falling 70 mV
VBATGD Battery good comparator rising threshold VBAT rising 3.55 V
VBATGD_HYST Battery good comparator falling threshold VBAT falling 100 mV
BATTERY CHARGER
VBAT_REG_ACC Charge voltage regulation accuracy VBAT = 4.112 V and 4.208 V –0.5% 0.5%
IICHG_REG_ACC Fast charge current regulation accuracy VBAT = 3.8 V, ICHG = 1024 mA, TJ = 25°C -4% 4%
VBAT = 3.8 V, ICHG = 1024 mA, TJ = -20°C – 125°C -7% 7%
VBAT = 3.8 V, ICHG = 1792 mA, TJ = -20°C – 125°C –10% 10%
ICHG_20pct Charge current with 20% option on VBAT = 3.1 V, ICHG = 104 mA, REG02 = 03 and REG02[0] = 1 75 175 mA
VBATLOWV Battery LOWV falling threshold Fast charge to precharge, REG04[1] = 1 2.6 2.8 2.9 V
VBATLOWV_HYST Battery LOWV rising threshold Precharge to fast charge, REG04[1] = 1
(Typical 200-mV hysteresis)		 2.8 3.0 3.1 V
IPRECHG_ACC Precharge current regulation accuracy VBAT = 2.6 V, ICHG = 256 mA –20% 20%
ITYP_TERM_ACC Typical termination current ITERM = 256 mA, ICHG = 2048 mA 265 mA
ITERM_ACC Termination current accuracy ITERM = 256 mA, ICHG = 2048 mA –22.5% 22.5%
VSHORT Battery short voltage VBAT falling 2.0 V
VSHORT_HYST Battery Short Voltage hysteresis VBAT rising 200 mV
ISHORT Battery short current VBAT < 2.2 V 100 mA
VRECHG Recharge threshold below VBAT_REG VBAT falling, REG04[0] = 0 100 mV
tRECHG Recharge deglitch time VBAT falling, REG04[0] = 0 20 ms
RON_BATFET SYS-BAT MOSFET on-resistance TJ = 25°C 24 28 mΩ
TJ = –40°C – 125°C 24 35
INPUT VOLTAGE/CURRENT REGULATION
VINDPM_REG_ACC Input voltage regulation accuracy -2% 2%
IUSB_DPM USB Input current regulation limit, VBUS = 5V, current pulled from SW USB100 85 100 mA
USB150 125 150 mA
USB500 440 500 mA
USB900 750 900 mA
IADPT_DPM Input current regulation accuracy IADP = 1.5 A, REG00[2:0] = 101 1.3 1.5 A
IIN_START Input current limit during system start up VSYS < 2.2 V 100 mA
KILIM IIN = KILIM/RILIM IINDPM = 1.5 A 395 435 475 A x Ω
D+/D- DETECTION (BQ24297)
VD+_SRC D+ voltage source 0.5 0.7 V
ID+_SRC D+ connection check current source 7 14 µA
ID–_SINK D– current sink 50 100 150 µA
ID_LKG Leakage current into D+/D– D–, switch open –1 1 µA
D+, switch open –1 1 µA
VD+_LOW D+ low comparator threshold 0.8 V
VD–_LOWdatref D– low comparator threshold 250 400 mV
RD–_DWN D– pulldown for connection check 14.25 24.8 kΩ
tSDP_DEFAULT Charging timer with 100mA USB host in default mode 45 mins
Vadpt1_lo D+ low comparator threshold for non-standard adapter Divider-1 As percentage of REGN, 0°C – 85°C(1) 46.5% 48% 49.5%
Vadpt1_hi D+ low comparator threshold for non-standard adapter divider-1 As percentage of REGN, 0°C – 85°C(1) 58.5% 60% 61.5%
Vadpt2_lo D+ low comparator threshold for non-standard adapter divider-2 As percentage of REGN, 0°C – 85°C(1) 15.5% 17% 18.5%
Vadpt2_hi D+ low comparator threshold for Non-standard adapter divider-2 As percentage of REGN, 0°C – 85°C(1) 28.5% 30% 31.5%
Vadpt3_lo D- low comparator threshold for non-standard adapter divider-3 As percentage of REGN, 0°C – 85°C(1) 46.5% 48% 49.5%
Vadpt3_hi D- high comparator threshold for non-standard adapter divider-3 As percentage of REGN, 0°C – 85°C(1) 58.5% 60% 61.5%
BAT OVER-VOLTAGE PROTECTION
VBATOVP Battery over-voltage threshold VBAT rising, as percentage of VBAT_REG 104%
VBATOVP_HYST Battery over-voltage hysteresis VBAT falling, as percentage of VBAT_REG 2%
tBATOVP Battery over-voltage deglitch time to disable charge 1 µs
THERMAL REGULATION AND THERMAL SHUTDOWN
TJunction_REG Junction temperature regulation accuracy REG06[1:0] = 11 120 °C
TSHUT Thermal shutdown rising temperature Temperature increasing 160 °C
TSHUT_HYS Thermal shutdown hysteresis 30 °C
Thermal shutdown rising deglitch Temperature increasing delay 1 ms
Thermal shutdown falling deglitch Temperature decreasing delay 1 ms
COLD/HOT THERMISTER COMPARATOR
VLTF Cold temperature threshold, TS pin voltage rising threshold Charger suspends charge. as percentage to VREGN 73% 73.5% 74%
VLTF_HYS Cold temperature hysteresis, TS pin voltage falling As percentage to VREGN 0.4%
VHTF Hot temperature TS pin voltage rising threshold As percentage to VREGN 46.6% 47.2% 48.8%
VTCO Cut-off temperature TS pin voltage falling threshold As percentage to VREGN 44.2% 44.7% 45.2%
Deglitch time for temperature out of range detection VTS > VLTF, or VTS < VTCO, or VTS < VHTF 10 ms
VBCOLD0 Cold temperature threshold, TS pin voltage rising threshold As percentage to VREGN REG02[1] = 0
(Approx. -10°C w/ 103AT)		 75.5% 76% 76.5%
VBCOLD0_HYS As percentage to VREGN REG02[1] = 0
(Approx. 1°C w/ 103AT)		 1%
VBCOLD1 Cold temperature threshold 1, TS pin voltage rising threshold As percentage to VREGN REG02[1] = 1
(Approx. -20°C w/ 103AT)		 78.5% 79% 79.5%
VBCOLD1_HYS As percentage to VREGN REG02[1] = 1
(Approx. 1°C w/ 103AT)		 1%
VBHOT0 Hot temperature threshold, TS pin voltage falling threshold As percentage to VREGN REG06[3:2] = 01
(Approx. 55°C w/ 103AT)		 35.5% 36% 36.5%
VBHOT0_HYS As percentage to VREGN REG06[3:2] = 01
(Approx. 3°C w/ 103AT)		 3%
VBHOT1 Hot temperature threshold 1, TS pin voltage falling threshold As percentage to VREGN REG06[3:2] = 00
(Approx. 60°C w/ 103AT)		 32.5% 33% 33.5%
VBHOT1_HYS As percentage to VREGN REG06[3:2] = 00
(Approx. 3°C w/ 103AT)		 3%
VBHOT2 Hot temperature threshold 2, TS pin voltage falling threshold As percentage to VREGN REG06[3:2] = 10
(Approx. 65°C w/ 103AT)		 29.5% 30% 30.5%
VBHOT2_HYS As percentage to VREGN REG06[3:2] = 10
(Approx. 3°C w/ 103AT)		 3%
CHARGE OVER-CURRENT COMPARATOR
IHSFET_OCP HSFET cycle by cycle over-current threshold 5.3 7.5 A
IBATFET_OCP System over load threshold 5.5 6.6 A
VLSFET_UCP LSFET charge under-current falling threshold From sync mode to non-sync mode 100 mA
FSW PWM Switching frequency, and digital clock 1300 1500 1700 kHz
DMAX Maximum PWM duty cycle 97%
VBTST_REFRESH Bootstrap refresh comparator threshold VBTST-VSW when LSFET refresh pulse is requested, VBUS = 5 V 3.6 V
BOOST MODE OPERATION
VOTG_REG_ACC OTG output voltage I(VBUS) = 0, REG06[7:4] = 0111 (4.998 V) 5 V
VOTG_REG_ACC OTG output voltage accuracy I(VBUS) = 0, REG06[7:4] = 0111 (4.998 V) -3% 3%
VOTG_BAT Battery voltage exiting OTG mode BAT falling, REG04[1] = 1 2.9 V
IOTG OTG mode output current REG01[0] = 0 1 A
REG01[0] = 1 1.5 A
VOTG_OVP OTG over-voltage threshold Rising threshold 5.8 6 V
VOTG_OVP_HYS OTG over-voltage threshold hysteresis Falling threshold 300 mV
IOTG_LSOCP LSFET cycle by cycle current limit 5 A
IOTG_HSZCP HSFET under current falling threshold 100 mA
IRBFET_OCP RBFET over-current threshold REG01[0] = 0 1.00 1.15 1.30 A
REG01[0] = 1 1.50 1.70 1.90
REGN LDO
VREGN REGN LDO output voltage VVBUS = 6 V, IREGN = 40 mA 4.8 5 5.5 V
VVBUS = 5 V, IREGN = 20 mA 4.7 4.8 V
IREGN REGN LDO current limit VVBUS = 5 V, VREGN = 3.8 V 50 mA
LOGIC I/O PIN CHARACTERISTICS (OTG, CE, STAT, QON, PSEL, PG)
VILO Input low threshold 0.4 V
VIH Input high threshold ( CE, STAT, QON, PSEL, PG) 1.3 V
VIH_OTG Input high threshold (OTG) 1.1 V
VOUT_LO Output low saturation voltage Sink current = 5 mA 0.4 V
IBIAS High level leakage current (OTG, CE, STAT , PSEL, PG) Pull-up rail 1.8 V 1 µA
IBIAS High level leakage current (QON) Pull-up rail 3.6 V 8 µA
I2C INTERFACE (SDA, SCL, INT)
VIH Input high threshold level VPULL-UP = 1.8 V, SDA and SCL 1.3 V
VIL Input low threshold level VPULL-UP = 1.8 V, SDA and SCL 0.4 V
VOL Output low threshold level Sink current = 5 mA 0.4 V
IBIAS High-level leakage current VPULL-UP = 1.8 V, SDA and SCL 1 µA
fSCL SCL clock frequency 400 kHz
DIGITAL CLOCK AND WATCHDOG TIMER
fHIZ Digital crude clock REGN LDO disabled 15 35 50 kHz
fDIG Digital clock REGN LDO enabled 1300 1500 1700 kHz
(1) REGN LDO is configured in drop-out mode. VBUS is close to REGN when IREGN = 0 mA.