SLUSBV8C August   2014  – November 2014

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Overvoltage-Protection (OVP) - Continuously Monitored
      2. 8.3.2  CHG Pin Indication (bq25101, bq25101H)
      3. 8.3.3  CHG Pin LED Pull-up Source (bq25101, bq25101H)
      4. 8.3.4  IN-DPM (VIN-DPM or IN-DPM)
      5. 8.3.5  OUT
      6. 8.3.6  ISET
      7. 8.3.7  PRE_TERM - Pre-Charge and Termination Programmable Threshold
      8. 8.3.8  TS
      9. 8.3.9  Timers
      10. 8.3.10 Termination
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down or Undervoltage Lockout (UVLO)
      2. 8.4.2 Power-up
      3. 8.4.3 Sleep Mode
      4. 8.4.4 New Charge Cycle
      5. 8.4.5 Termination and Timer Disable Mode (TTDM) - TS Pin High
      6. 8.4.6 Battery Detect Routine
      7. 8.4.7 Refresh Threshold
      8. 8.4.8 Starting a Charge on a Full Battery
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application - Charger Application Design Example
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedures
        1. 9.2.2.1 Calculations
          1. 9.2.2.1.1 Program the Fast Charge Current, ISET:
          2. 9.2.2.1.2 Program the Termination Current Threshold, ITERM:
          3. 9.2.2.1.3 TS Function
          4. 9.2.2.1.4 Selecting IN and OUT Pin Capacitors
      3. 9.2.3 bq25100 Application Performance Plots
  10. 10Power Supply Recommendations
    1. 10.1 Leakage Current Effects on Battery Capacity
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Package
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input voltage IN (with respect to VSS) –0.3 30 V
OUT (with respect to VSS) –0.3 7 V
PRE-TERM, ISET, TS, CHG
(with respect to VSS)		 –0.3 7 V
Input current IN 300 mA
Output current (continuous) OUT 300 mA
Output sink current CHG 15 mA
TJ Junction temperature –40 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.

7.2 Handling Ratings

MIN MAX UNIT
ESD Electrostatic discharge (IEC61000-4-2)(1) IN, OUT, TS 1 µF between IN and GND,
1 µF between TS and GND,
2 µF between OUT and GND,
x5R Ceramic or equivalent		 8 contact
15 Air 		kV
TSTG Storage temperature –65 150 °C
(1) The test was performed on IC pins that may potentially be exposed to the customer at the product level. The bq2510x IC requires a minimum of the listed capacitance, external to the IC, to pass the ESD test.

7.3 Recommended Operating Conditions (1)

MIN NOM UNIT
VIN IN voltage range 3.5 28 V
IN operating voltage range, Restricted by VDPM and VOVP 4.45 6.45 V
IIN Input current, IN pin 250 mA
IOUT Current, OUT pin 250 mA
TJ Junction temperature 0 125 °C
RPRE-TERM Programs precharge and termination current thresholds 0.6 30 kΩ
RISET Fast-charge current programming resistor 0.54 13.5 kΩ
RTS 10k NTC thermistor range without entering BAT_EN or TTDM 1.66 258 kΩ
(1) Operation with VIN less than 4.5V or in drop-out may result in reduced performance.

7.4 Thermal Information

THERMAL METRIC(1) bq25100 UNIT
YFP (6 PINS)
RθJA Junction-to-ambient thermal resistance 132.9 °C/W
RθJCtop Junction-to-case (top) thermal resistance 1.3
RθJB Junction-to-board thermal resistance 21.8
ψJT Junction-to-top characterization parameter 5.6
ψJB Junction-to-board characterization parameter 21.8
RθJCbot Junction-to-case (bottom) thermal resistance n/a
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
UVLO Undervoltage lock-out exit VIN: 0 V → 4 V 3.15 3.3 3.45 V
VHYS_UVLO Hysteresis on VUVLO_RISE falling VIN: 4 V→0 V;
VUVLO_FALL = VUVLO_RISE – VHYS-UVLO		 250 mV
VIN-DT Input power good detection threshold is VOUT + VIN-DT Input power good if VIN > VOUT + VIN-DT;
VOUT = 3.6 V; VIN: 3.5 V → 4 V		 15 60 130 mV
VHYS-INDT Hysteresis on VIN-DT falling VOUT = 3.6 V; VIN: 4 V → 3.5 V 31 mV
tDGL(PG_PWR) Deglitch time on exiting sleep Time measured from VIN: 0 V → 5 V 1-μs rise-time to charge enables; VOUT = 3.6 V 29 ms
tDGL(PG_NO-PWR) Deglitch time on VHYS-INDT power down. Same as entering sleep. Time measured from VIN: 5 V → 3.2 V 1-μs fall-time to charge disables; VOUT = 3.6 V 29 ms
VOVP Input over-voltage protection threshold VIN: 5 V → 12 V 6.52 6.67 6.82 V
tDGL(OVP-SET) Input over-voltage blanking time VIN: 5 V → 12 V 113 μs
VHYS-OVP Hysteresis on OVP VIN: 11 V → 5 V 110 mV
tDGL(OVP-REC) Deglitch time exiting OVP Time measured from VIN: 12 V → 5 V 1-μs fall-time to charge enables 450 μs
VIN-DPM Low input voltage protection. Restricts lout at VIN-DPM Limit input source current to 50 mA;
VOUT = 3.5 V; RISET = 1.35 kΩ		 4.25 4.31 4.37 V
ISET SHORT CIRCUIT TEST
RISET_SHORT Highest resistor value considered a fault (short). RISET: 540 Ω → 250 Ω, Iout latches off;
Cycle power to reset		 420 450 Ω
tDGL_SHORT Deglitch time transition from ISET short to Iout disable Clear fault by disconnecting IN or cycling (high / low) TS/BAT_EN 1 ms
IOUT_CL Maximum OUT current limit regulation (Clamp) VIN = 5 V; VOUT = 3.6 V; RISET: 540 Ω → 250 Ω; IOUT latches off after tDGL-SHORT 550 600 650 mA
BATTERY SHORT PROTECTION
VOUT(SC) OUT pin short-circuit detection threshold/ precharge threshold VOUT:3 V → 0.5 V; No deglitch 0.75 0.8 0.85 V
VOUT(SC-HYS) OUT pin Short hysteresis Recovery ≥ VOUT(SC) + VOUT(SC-HYS); Rising; No deglitch 77 mV
IOUT(SC) Source current to OUT pin during short-circuit detection 9 11 13 mA
QUIESCENT CURRENT
IOUT(PDWN) Battery current into OUT pin VIN = 0 V; 0°C to 125°C 75 nA
VIN = 0 V; 0°C to 85°C 50
IOUT(DONE) OUT pin current, charging terminated VIN = 6 V; VOUT > VOUT(REG) 6 μA
IIN(STDBY) Standby current into IN pin TS = GND; VIN ≤ 6 V 125 μA
ICC Active supply current, IN pin TS = open, VIN = 6 V;
TTDM – no load on OUT pin; VOUT > VOUT(REG); IC enabled		 0.75 1 mA
BATTERY CHARGER FAST-CHARGE
VOUT(REG) Output voltage TJ = 0°C to 125°C; IOUT = 0 mA to 250 mA;
VIN = 5.0 V; VTS-45°C≤ VTS ≤ VTS-0°C (bq25100/101)		 4.16 4.2 4.23 V
TJ = 0°C to 125°C; IOUT = 0 mA to 250 mA;
VIN = 5.0 V; VTS-45°C≤ VTS ≤ VTS-0°C (bq25100A)		 4.26 4.3 4.33
TJ = 0°C to 125°C; IOUT = 0 mA to 250 mA;
VIN = 5.0 V; VTS-45°C≤ VTS ≤ VTS-0°C (bq25100H/101H)		 4.31 4.35 4.38
TJ = -5°C to 55°C; IOUT = 10mA to 75 mA;
VIN = 5.0 V; VTS-45°C≤ VTS ≤ VTS-0°C (bq25100A)		 4.275 4.3 4.325
VO_HT(REG) Battery hot regulation voltage VIN = 5.0 V; IOUT =10 mA to 250 mA;
VTS-60°C≤ VTS ≤ VTS-45°C (bq25100/101)		 4.02 4.06 4.1 V
VIN = 5.0 V; IOUT =10 mA to 250 mA;
VTS-60°C≤ VTS ≤ VTS-45°C (bq25100H/101H)		 4.16 4.2 4.24
IOUT(RANGE) Programmed output “fast charge” current range VOUT(REG) > VOUT > VLOWV; VIN = 5 V;
RISET = 0.54 kΩ to 13.5 kΩ		 10 250 mA
VDO(IN-OUT) Drop-Out, VIN – VOUT Adjust VIN down until IOUT = 0.2 A; VOUT = 4.15 V; RISET = 680 Ω; TJ ≤ 100°C 220 400 mV
IOUT Output “fast charge” formula VOUT(REG) > VOUT > VLOWV; VIN = 5 V KISET/RISET A
KISET Fast charge current factor RISET = KISET /IOUT; 20 < IOUT < 250 mA 129 135 145 AΩ
RISET = KISET /IOUT; 5 < IOUT < 20 mA 125 135 145
PRECHARGE – SET BY PRETERM PIN
VLOWV Pre-charge to fast-charge transition threshold 2.4 2.5 2.6 V
tDGL1(LOWV) Deglitch time on pre-charge to fast-charge transition 57 μs
tDGL2(LOWV) Deglitch time on fast-charge to pre-charge transition 32 ms
IPRE-TERM Refer to the Termination Section
%PRECHG Pre-charge current, default setting VOUT < VLOWV; RISET = 2.7 kΩ; RPRE-TERM= High Z or for BQ25101/101H 18 20 22 %IOUT-CC
Pre-charge current formula RPRE-TERM = KPRE-CHG (Ω/%) × %PRE-CHG (%) RPRE-TERM/KPRE-CHG%
KPRE-CHG % Pre-charge Factor VOUT < VLOWV; VIN = 5 V;
RPRE-TERM = 6 kΩ to 30 kΩ;
RISET = 1.8 kΩ;
RPRE-TERM = KPRE-CHG × %IPRE-CHG,
where %IPRE-CHG is 20 to 100%		 280 300 320 Ω/%
VOUT < VLOWV; VIN = 5 V;
RPRE-TERM = 3 kΩ to 6 kΩ;
RISET = 1.8 kΩ;
RPRE-TERM = KPRE-CHG × %IPRE-CHG,
where %IPRE-CHG is 10% to 20%		 265 300 340 Ω/%
TERMINATION – SET BY PRE-TERM PIN
%TERM Termination threshold current, default setting VOUT > VRCH; RISET = 2.7 kΩ; RPRE-TERM = High Z or for BQ25101/101H 9 10 11 %IOUT-CC
Termination current threshold formula RPRE-TERM = KTERM (Ω/%) × %TERM (%) RPRE-TERM/ KTERM
KTERM % Term factor VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 6 kΩ to 30 kΩ;
RISET = 1.8 kΩ, RPRE-TERM=KTERM × %ITERM, where %ITERM is 10 to 50%		 575 600 640 Ω/%
VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 3 kΩ to 6 kΩ ;
RISET = 1.8 kΩ, RPRE-TERM= KTERM × %ITERM, where %ITERM is 5 to 10%		 555 620 685
VOUT > VRCH; VIN = 5 V;
RPRE-TERM = 750 Ω to 3 kΩ;
RISET = 1.8 kΩ, RPRE-TERM= KTERM × %ITERM, where %ITERM is 1.25% to 5%		 352 680 1001
IPRE-TERM Current for programming the term. and pre-chg with resistor, ITerm-Start is the initial PRE-TERM current RPRE-TERM = 6 kΩ; VOUT = 4.15 V 23 25 27 μA
ITERM Termination current range Minimum absolute termination current 1 mA
%TERM Termination current formula RTERM/ KTERM %
tDGL(TERM) Deglitch time, termination detected 29 ms
RECHARGE OR REFRESH
VRCH Recharge detection threshold – normal temp VIN = 5 V; VTS = 0.5 V;
VOUT: 4.25 V → VRCH (bq25100);
VOUT: 4.35 V → VRCH (bq25100A);
VOUT: 4.40 V → VRCH (bq25100H)		 VO(REG)
–0.125		 VO(REG)–0.095 VO(REG)–0.075 V
Recharge detection threshold – hot temp VIN = 5 V; VTS = 0.2 V;
VOUT: 4.15 V → VRCH (bq25100);
VOUT: 4.25 V → VRCH (bq25100H)		 VO_HT(REG)
–0.130		 VO_HT(REG)
–0.105		 VO_HT(REG)
–0.080		 V
tDGL1(RCH) Deglitch time, recharge threshold detected VIN = 5 V; VTS = 0.5 V;
VOUT: 4.25 V → 3.5V in 1 μs;
tDGL(RCH) is time to ISET ramp		 29 ms
tDGL2(RCH) Deglitch time, recharge threshold detected in OUT-Detect Mode VIN = 5 V; VTS = 0.5 V;
VOUT = 3.5 V inserted;
tDGL(RCH) is time to ISET ramp		 29 ms
BATTERY DETECT ROUTINE – (NOTE: In Hot mode VO(REG) becomes VO_HT(REG))
VREG-BD VOUT reduced regulation during battery detect bq25100/101/bq25100H/101H;
VIN = 5 V; VTS = 0.5 V, Battery absent		 VO(REG)-0.450 VO(REG)-0.400 VO(REG)-0.350 V
bq25100A;
VIN = 5 V; VTS = 0.5 V; Battery absent		 VO(REG)-0.550 VO(REG)-0.500 VO(REG)-0.450
IBD-SINK Sink current during VREG-BD VIN = 5 V; VTS = 0.5 V; Battery absent 2 mA
tDGL(HI/LOW REG) Regulation time at VREG or VREG-BD VIN = 5 V; VTS = 0.5 V; Battery absent 25 ms
VBD-HI High battery detection threshold VIN = 5 V; VTS = 0.5 V; Battery absent VO(REG) -0.150 VO(REG)-0.100 VO(REG)-0.050 V
VBD-LO Low battery detection threshold VIN = 5 V; VTS = 0.5 V; Battery absent VREG-BD
+0.05		 VREG-BD +0.1 VREG-BD
+0.15		 V
BATTERY CHARGING TIMERS AND FAULT TIMERS
tPRECHG Pre-charge safety timer value Restarts when entering pre-charge;
Always enabled when in pre-charge.		 1700 1940 2250 s
tMAXCH Charge safety timer value Clears fault or resets at UVLO, TS disable, OUT Short, exiting LOWV and Refresh 34000 38800 45000 s
BATTERY-PACK NTC MONITOR (see Note 1); TS pin: 10k NTC
INTC-10k NTC bias current VTS = 0.3 V 48.5 50.5 52.5 μA
INTC-DIS-10k 10k NTC bias current when charging is disabled VTS = 0 V 27 30 33 μA
INTC-FLDBK-10k INTC is reduced prior to entering TTDM to keep cold thermistor from entering TTDM VTS: Set to 1.525 V 4 5 6.5 μA
VTTDM(TS) Termination and timer disable mode Threshold – Enter VTS: 0.5 V → 1.7 V; Timer held in reset 1550 1600 1650 mV
VHYS-TTDM(TS) Hysteresis exiting TTDM VTS: 1.7 V → 0.5 V; Timer enabled 100 mV
VCLAMP(TS) TS maximum voltage clamp VTS = Open (float) 1900 1950 2000 mV
tDGL(TTDM) Deglitch exit TTDM between states 57 ms
Deglitch enter TTDM between states 8 μs
VTS_I-FLDBK TS voltage where INTC is reduce to keep thermistor from entering TTDM INTC adjustment (90 to 10%; 45 to 6.6 uA) takes place near this spec threshold;
VTS: 1.425 V → 1.525 V		 1475 mV
CTS Optional capacitance – ESD 0.22 μF
VTS-0°C Low temperature CHG pending Low temp charging to pending;
VTS: 1 V → 1.5 V		 1230 1255 1280 mV
VHYS-0°C Hysteresis At 0°C;
Charge pending to low temp charging;
VTS: 1.5 V → 1 V		 100 mV
VTS-10°C Low temperature, half charge Normal charging to low temp charging;
VTS: 0.5 V → 1 V		 775 800 830 mV
VHYS-10°C Hysteresis At 10°C;
Low temp charging to normal CHG;
VTS: 1 V → 0.5 V		 55 mV
VTS-45°C High temperature At 4.1V (bq25100/101) or 4.2V (bq25100H/101H);
Normal charging to high temp CHG;
VTS: 0.5 V → 0.2 V		 253 268 283 mV
VHYS-45°C Hysteresis At 45°C;
High temp charging to normal CHG;
VTS: 0.2 V → 0.5 V		 20 mV
VTS-60°C High temperature disable bq25100/01/100H/101H/100L;
High temp charge to pending;
VTS: 0.2 V → 0.1 V		 160 170 180 mV
VHYS-60°C Hysteresis At 60°C (bq25100/01/100H/101H/100L);
Charge pending to high temp CHG;
VTS: 0.1 V → 0.2 V		 20 mV
tDGL(TS_10C) Deglitch for TS thresholds: 10C Normal to cold operation; VTS: 0.6 V → 1 V 50 ms
Cold to normal operation; VTS: 1 V → 0.6 V 12
tDGL(TS) Deglitch for TS thresholds: 0/45/60C Battery charging 30 ms
VTS-EN-10k Charge enable threshold, (10k NTC) VTS: 0 V → 0.175 V 84 92 100 mV
VTS-DIS_HYS-10k HYS below VTS-EN-10k to disable, (10k NTC) VTS: 0.125 V → 0 V 12 mV
THERMAL REGULATION
TJ(REG) Temperature regulation limit 125 °C
TJ(OFF) Thermal shutdown temperature 155 °C
TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C
LOGIC LEVELS ON /CHG
VOL Output low voltage ISINK = 5 mA 0.4 V
ILEAK Leakage current into IC VCHG = 5 V 1 μA

7.6 Typical Characteristics

Setup: Typical Applications Schematic; VIN = 5 V, VBAT = 3.6 V (unless otherwise noted)
scr_fig1_SLUSBV8.gif
No Battery, No Load
Figure 1. Power Up Timing
scr_fig3_SLUSBV8.gif
VIN 0 V -5 V-7 V-5 V
Figure 3. OVP from Normal Power-Up Operation
scr_fig5_SLUSBV8.gif
VIN Regulated
Figure 5. DPM-Adaptor Current Limits
scr_fig7_SLUSBV8.gif
No Load
Figure 7. Battery Removal
scr_fig9_SLUSBV8.gif
20-Ω resistor at OUT, No input, VBAT = 3.7 V
Figure 9. Battery Plug In
scr_fig11_SLUSBV8.gif
Figure 11. ISET Short Prior to Power Up  
D001_SLUSBV8.gif
Figure 13. Load Regulation Over Temperature
D003_SLUSBV8.gif
Figure 15. Current Regulation Over Temperature  
scr_fig2_SLUSBV8.gif
Hot Plug
Figure 2. OVP 7-V Adaptor
scr_fig4_SLUSBV8.gif
Figure 4. TS Enable and Disable
scr_fig6_SLUSBV8.gif
Figure 6. Hot Plug Source   with No Battery - Battery Detection
scr_fig8_SLUSBV8.gif
Figure 8.   ISET Shorted During Normal Operation
scr_fig10_SLUSBV8.gif
20-Ω resistor at OUT, No input, VBAT = 3.7 V
Figure 10. Battery Removal  
scr_fig12_SLUSBV8.gif
90-mA Load, 120-mA ICHG
Figure 12. Power Up
D002_SLUSBV8.gif
Figure 14. Line Regulation Over Temperature  
D004_SLUSBV8.gif
bq25100 charge cycle, ICHG = 75 mA, VBAT_REG = 4.2 V
Figure 16. Battery Voltage vs Charge Current