SLUSFD7 April   2024 BQ25308

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Description (continued)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Power Up
        1. 8.3.1.1 Power-On-Reset (POR)
        2. 8.3.1.2 REGN Regulator Power Up
        3. 8.3.1.3 Charger Power Up
        4. 8.3.1.4 Charger Enable and Disable by EN Pin
        5. 8.3.1.5 Device Unplugged From Input Source
      2. 8.3.2 Battery Charging Management
        1. 8.3.2.1 Battery Charging Profile
        2. 8.3.2.2 Battery Charging Profile for LiFePO4
        3. 8.3.2.3 Precharge
        4. 8.3.2.4 Charging Termination
        5. 8.3.2.5 Battery Recharge
        6. 8.3.2.6 Charging Safety Timer
        7. 8.3.2.7 Thermistor Temperature Monitoring
      3. 8.3.3 Charging Status Indicator (STAT)
      4. 8.3.4 Protections
        1. 8.3.4.1 Voltage and Current Monitoring
          1. 8.3.4.1.1 Input Over-Voltage Protection
          2. 8.3.4.1.2 Input Voltage Dynamic Power Management (VINDPM)
          3. 8.3.4.1.3 Input Current Limit
          4. 8.3.4.1.4 Cycle-by-Cycle Current Limit
        2. 8.3.4.2 Thermal Regulation and Thermal Shutdown
        3. 8.3.4.3 Battery Protection
          1. 8.3.4.3.1 Battery Over-Voltage Protection (VBAT_OVP)
          2. 8.3.4.3.2 Dead Battery Charge Inhibit
        4. 8.3.4.4 ICHG Pin Open and Short Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Mode, HiZ Mode, Sleep Mode, Charge Mode, Termination Mode, and Fault Mode
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Charge Voltage Settings
          2. 9.2.1.2.2 Charge Current Setting
          3. 9.2.1.2.3 Inductor Selection
          4. 9.2.1.2.4 Input Capacitor
          5. 9.2.1.2.5 Output Capacitor
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Typical Application with External Power Path
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RTE|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the components to minimize high frequency current path loop (see Figure 11-1) is important to prevent electrical and magnetic field radiation and high frequency resonant problems. Follow this specific order carefully to achieve the proper layout.

  • Place input capacitor as close as possible to PMID pin and use shortest thick copper trace to connect input capacitor to PMID pin and GND plane.
  • It is critical that the exposed thermal pad on the backside of the device be soldered to the PCB ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers. Connect the GND pins to thermal pad on the top layer.
  • Put output capacitor near to the inductor output terminal and the charger device. Ground connections need to be tied to the IC ground with a short copper trace or GND plane
  • Place inductor input terminal to SW pin as close as possible and limit SW node copper area to lower electrical and magnetic field radiation. Do not use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other trace or plane.
  • Route analog ground separately from power ground if possible. Connect analog ground and power ground together using thermal pad as the single ground connection point under the charger device. It is acceptable to connect all grounds to a single ground plane if multiple ground planes are not available.
  • Decoupling capacitors should be placed next to the device pins and make trace connection as short as possible.
  • For high input voltage and high charge current applications, sufficient copper area on GND should be budgeted to dissipate heat from power losses.
  • Ensure that the number and sizes of vias allow enough copper for a given current path
GUID-15A23959-E6EB-455F-B539-E71B054BDBA6-low.gif Figure 11-1 High Frequency Current Path