SLUSFD7 April 2024 BQ25308
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
QUIESCENT CURRENT | ||||||
IVBUS_REVS | VBUS reverse current from BAT/SW to VBUS, TJ = -40°C - 85°C | VBAT = VSW = 4.5V, VBUS is shorted to GND, measure VBUS reverse current | 0.07 | 3 | µA | |
IQ_VBUS_DIS | VBUS leakage current in disable mode, TJ = -40°C - 85°C | VBUS = 5V, VBAT = 4V, charger is disabled, /EN is pulled high | 3.5 | 4.25 | µA | |
IQ_BAT_HIZ | BAT and SW pin leakage current in HiZ mode, TJ = -40°C - 65°C | VBAT = VSW = 4.5V, VBUS floating | 0.17 | 1 | µA | |
VBUS POWER UP | ||||||
VVBUS_OP | VBUS operating range | 4.1 | 17 | V | ||
VVBUS_UVLOZ | VBUS power on reset | VBUS rising | 3 | 3.8 | V | |
VVBUS_UVLOZ_HYS | VBUS power on reset hysteresis | VBUS falling | 250 | mV | ||
VVBUS_LOWV | A condition to turnon REGN | VBUS rising, REGN turns on, VBAT = 3.2V | 3.8 | 3.9 | 4 | V |
VVBUS_LOWV_HYS | A condition to turnon REGN, hysteresis | VBUS falling, REGN turns off, VBAT = 3.2V | 300 | mV | ||
VSLEEP | Enter sleep mode threshold | VBUS falling, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 30 | 60 | 100 | mV |
VSLEEPZ | Exit sleep mode threshold | VBUS rising, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 110 | 157 | 295 | mV |
VVBUS_OVP_RISE | VBUS overvoltage rising threshold | VBUS rising, converter stops switching | 17 | 17.4 | 17.8 | V |
VVBUS_OVP_HYS | VBUS overvoltage falling hysteresis | VBUS falling, converter stops switching | 750 | mV | ||
MOSFETS | ||||||
RDSON_Q1 | Top reverse blocking MOSFET on-resistance between VBUS and PMID (Q1) | VREGN = 5V | 40 | 65 | mΩ | |
RDSON_Q2 | High-side switching MOSFET on-resistance between PMID and SW (Q2) | VREGN = 5V | 50 | 82 | mΩ | |
RDSON_Q3 | Low-side switching MOSFET on-resistance between SW and GND (Q3) | VREGN = 5V | 45 | 72 | mΩ | |
BATTERY CHARGER | ||||||
VBATREG | Charge voltage regulation | VSET pin floating, TJ = -40°C to +85°C | 3.582 | 3.6 | 3.618 | V |
VSET pin is grounded, TJ = -40°C to +85°C | 4.03 | 4.05 | 4.07 | V | ||
Connect VSET pin to 51kΩ resistor, TJ = -40°C to +85°C | 4.13 | 4.15 | 4.17 | V | ||
Connect VSET pin to 10kΩ resistor, TJ = -40°C to +85°C | 4.179 | 4.2 | 4.221 | V | ||
ICHG | Charge current regulation | ICHG set at 1.72A with RICHG=23.2kΩ | 1.55 | 1.72 | 1.89 | A |
ICHG set at 1.0A with RICHG=40.2kΩ | 0.9 | 1 | 1.1 | A | ||
ICHG set at 0.5A with RICHG=78.7kΩ | 0.4 | 0.5 | 0.6 | A | ||
ITERM | Termination current | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ | 138 | 172 | 206 | mA |
ICHG = 1.0A, 10% of ICHG, RICHG=40.2kΩ | 70 | 100 | 130 | mA | ||
ICHG = 0.5A, ITERM =63mA RICHG=78.7kΩ | 33 | 63 | 93 | mA | ||
IPRECHG | Precharge current | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ | 115 | 172 | 225 | mA |
ICHG = 1.0A, 10% of ICHG, RICHG=40.2kΩ | 50 | 100 | 150 | mA | ||
ICHG = 0.5A, 10% of ICHG, RICHG=78.7kΩ | 28 | 63 | 98 | mA | ||
VBAT_PRECHG_RISE_LFP | VBAT precharge rising threshold for LiFePO4 | Trickle to precharge, VBATREG = 3.6V | 2.05 | 2.2 | 2.35 | V |
VBAT_PRECHG_FALL_LFP | VBAT precharge rising threshold for LiFePO4 | Precharge to trickle, VBATREG = 3.6V | 1.85 | 2 | 2.15 | V |
IBAT_TRICKLE_LFP | Trickle charge current for LiFePO4 | VBAT < VBAT_PRECHG_FALL, VBATREG = 3.6V | 25 | 35 | 46 | mA |
VBAT_SHORT_RISE_LFP | VBAT short rising threshold for LiFePO4 | Short to trickle, VBATREG = 3.6V | 1.1 | 1.2 | 1.3 | V |
VBAT_SHORT_RISE | VBAT short rising threshold | Short to precharge, VBATREG = 4.05V / 4.15V / 4.2V | 2.05 | 2.2 | 2.35 | V |
VBAT_SHORT_FALL_LFP | VBAT short falling threshold for LiFePO4 | Trickle to short, VBATREG = 3.6V | 0.9 | 1 | 1.1 | V |
VBAT_SHORT_FALL | VBAT short falling threshold | Precharge to short, VBATREG = 4.05V / 4.15V / 4.2V | 1.85 | 2 | 2.15 | V |
IBAT_SHORT | Leakage current into battery | 0.5V < VBAT < VBAT_SHORT_FALL, TJ = 25°C | -1.5 | 1 | uA | |
0.5V < VBAT < VBAT_SHORT_FALL, TJ = -40°C to +85°C | -1.5 | 5 | uA | |||
VBAT_LOWV_RISE | Rising threshold | Precharge to fast charge | 2.9 | 3 | 3.1 | V |
VBAT_LOWV_FALL | Falling threshold | Fast charge to precharge | 2.6 | 2.7 | 2.8 | V |
VRECHG_HYS | Recharge hysteresis below VBATREG | VBAT falling | 110 | 160 | 216 | mV |
INPUT VOLTAGE / CURRENT REGULATION | ||||||
VINDPM_MIN | Minimum input voltage regulation | VBAT = 3.5V, measured at PMID pin | 3.9 | 4.0 | 4.1 | V |
VINDPM | Input voltage regulation | VBAT = 4V, measured at PMID pin, VINDPM = 1.085*VBAT + 0.025V | 4.27 | 4.37 | 4.47 | V |
IINDPM_3A | Input current regulation | 3 | 3.35 | 3.7 | A | |
BATTERY OVER-VOLTAGE PROTECTION | ||||||
VBAT_OVP_RISE | Battery overvoltage rising threshold |
VBAT rising, as percentage of VBATREG (VBATREG = 4.15V) | 104 | % | ||
VBAT_OVP_RISE | Battery overvoltage rising threshold | VBAT rising, as percentage of VBATREG | 101.9 | 103.5 | 105 | % |
VBAT_OVP_FALL | Battery overvoltage falling threshold | VBAT falling, as percentage of VBATREG | 100.0 | 101.6 | 103.1 | % |
CONVERTER PROTECTION | ||||||
VBTST_REFRESH | Bootstrap refresh comparator threshold | (VBTST - VSW) when LSFET refresh pulse is requested, VBUS = 5V | 2.7 | 3 | 3.3 | V |
IHSFET_OCP | HSFET cycle by cycle over current limit threshold | 5.2 | 6.2 | 6.7 | A | |
STAT INDICATION | ||||||
ISTAT_SINK | STAT pin sink current | 6 | mA | |||
FBLINK | STAT pin blink frequency | 1 | Hz | |||
FBLINK_DUTY | STAT pin blink duty cycle | 50 | % | |||
THERMAL REGULATION AND THERMAL SHUTDOWN | ||||||
TREG | Junction temperature regulation accuracy | 111 | 120 | 133 | °C | |
TSHUT | Thermal shutdown rising threshold | Temperature increasing | 150 | °C | ||
Thermal shutdown falling threshold | Temperature decreasing | 125 | °C | |||
BUCK MODE OPERATION | ||||||
FSW | PWM switching frequency | SW node frequency | 1.02 | 1.2 | 1.38 | MHz |
DMAX | Maximum PWM Duty Cycle | 97 | % | |||
REGN LDO | ||||||
VREGN_UVLO | REGN UVLO | VVBUS rising | 3.85 | V | ||
VREGN | REGN LDO output voltage | VVBUS = 5V, IREGN = 0 to 16mA | 4.2 | 5 | V | |
VREGN | REGN LDO output voltage | VVBUS = 12V, IREGN = 16mA | 4.5 | 5.4 | V | |
ICHG SETTING | ||||||
VICHG | ICHG pin regulated voltage | 993 | 998 | 1003 | mV | |
RICHG_SHORT_FALL | Resistance to disable charge | 1 | kΩ | |||
RICHG_OPEN_RISE | Minimum resistance to disable charge | 565 | kΩ | |||
RICHG | Programmable resistance at ICHG | 11.7 | 250 | kΩ | ||
RICHG_MIN_SLE1 | Minimum programmable resistance at ICHG | 11.7 | kΩ | |||
RICHG_HIGH | ICHG setting resistor threshold to clamp precharge and termination current to 63mA | RICHG > RICHG_HIGH | 60 | 65 | 70 | kΩ |
KICHG | Charge current ratio | ICHG set at 1.72A with RICHG = 23.2kΩ, ICHG = KICHG / RICHG | 36000 | 40000 | 44000 | AxΩ |
ICHG set at 1.0A with RICHG = 40.2kΩ, ICHG = KICHG / RICHG | 36000 | 40280 | 44000 | AxΩ | ||
ICHG set at 0.5A with RICHG = 78.7kΩ, ICHG = KICHG / RICHG | 32000 | 40700 | 48000 | AxΩ | ||
COLD/HOT THERMISTOR COMPARATOR | ||||||
VT1% | TCOLD (0°C) threshold, charge suspended if thermistor temperature is below T1 | VTS rising, as percentage to VREGN | 72.68 | 73.5 | 74.35 | % |
VT1% | VTS falling | As Percentage to VREGN | 70.68 | 71.5 | 72.33 | % |
VT3% | THOT (45°C) threshold, charge suspended if thermistor temperature is above T_HOT | VTS falling, as percentage to VREGN | 46.35 | 47.25 | 48.15 | % |
VT3% | VTS rising | As percentage to VREGN | 47.35 | 48.25 | 49.15 | % |
LOGIC I/O PIN CHARACTERESTICS (POL, EN) | ||||||
VILO | Input low threshold | Falling | 0.4 | V | ||
VIH | Input high threshold | Rising | 1.3 | V | ||
IBIAS | High-level leakage current at /EN pin | /EN pin is pulled up to 1.8 V | 1 | µA |