SLUSAH0G october   2011  – august 2023 BQ25504

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Maximum Power Point Tracking
      2. 8.3.2 Battery Undervoltage Protection
      3. 8.3.3 Battery Overvoltage Protection
      4. 8.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 8.3.5 Nano-Power Management and Efficiency
    4. 8.4 Device Functional Modes
      1. 8.4.1 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      2. 8.4.2 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      3. 8.4.3 Thermal Shutdown
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Storage Element Selection
      2. 9.1.2 Inductor Selection
      3. 9.1.3 Capacitor Selection
        1. 9.1.3.1 VREF_SAMP Capacitance
        2. 9.1.3.2 VIN_DC Capacitance
        3. 9.1.3.3 VSTOR Capacitance
        4. 9.1.3.4 Additional Capacitance on VSTOR or VBAT
    2. 9.2 Typical Applications
      1. 9.2.1 Solar Application Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TEG Application Circuit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 MPPT Disabled, Low Impedance Source Application Circuit
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Zip Files
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.1.2 Detailed Design Procedure

The recommended L1 = 22 µH, CBYP = 0.01 µF and low leakage CREF = 10 nF are selected. In order to ensure the fastest recovery of the harvester output voltage to the MPPT level following power extraction, the minimum recommended CIN = 4.7 µF is selected. Because no large system load transients are expected and to ensure fast charge time during cold start, the minimum recommended CSTOR = 4.7 µF. To stop charging when the IC junction temperature is above 65°C, the OT_PROG pin is tied to ground.

  • With VBAT_UV < VBAT_OV ≤ 5.5 V, to size the VBAT_OV resistors, first choose RSUMOV = ROV1 + ROV2 = 10 MΩ then solve Equation 3 for
    Equation 10. GUID-2D89B9B4-C9AD-4248-A1A5-10C607F2A085-low.gif
  • ROV2 = RSUMOV - ROV1 = 10 MΩ - 5.95 MΩ = 4.05 MΩ → 4.02 MΩ resulting in VBAT_OV = 3.15 V
  • To size the VBAT_UV resistors, first choose RSUMUV = RUV1 + RUV2 = 10 MΩ then solve Equation 2 for
    Equation 11. GUID-CBC3EEC5-55D6-4AD8-89C3-283BF8DF486C-low.gif
  • RUV2 = RSUMUV - RUV1 = 10 MΩ - 5.60 MΩ = 4.4 MΩ → 4.42 MΩ closest 1% resistor resulting in
    VBAT_UV = 2.2 V.
  • With VBAT_OV ≥ VBAT_OK_HYST > VBAT_OK ≥ VBAT_UV, to size the VBAT_OK and VBAT_OK_HYST resistors,
    first choose RSUMOK = ROK1 + ROK2 + ROK3 = 10 MΩ then solve Equation 4 and Equation 5 for
    Equation 12. GUID-D9F913E2-296E-404D-A648-80A4DED4EDD1-low.gif
    Equation 13. GUID-F59A2864-B890-4C58-923E-A909935B89E0-low.gif
  • ROK3 = RSUMOK - ROK1 - ROK2 = 10 MΩ - 4.42 MΩ - 4.22 MΩ = 1.36 MΩ → 1.43 MΩ to give
    VBAT_OK = 2.44 V and VBAT_OK_HYST = 2.85 V.
  • Keeping in mind that VREF_SAMP stores the MPP voltage for the harvester, first choose RSUMOC = ROC1 + ROC2 = 20 MΩ then solve Equation 1 for
    Equation 14. GUID-901FD073-B7A9-46DC-AA61-491E15CB0AF9-low.gif
    Equation 15. GUID-7D59A6CC-F52F-45BE-B1CD-CF0A602EBC35-low.gif
  • SLURAQ1 provides help on sizing and selecting the resistors.