SLUSFA3B June 2023 – February 2024 BQ25622E
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
QUIESCENT CURRENTS | ||||||
IQ_BAT | Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC disabled, system is powered by battery. -40 °C < TJ < 60 °C | 1.5 | 3 | µA | |
IQ_BAT_ADC | Quiescent battery current (BAT, SYS, SW) when the charger is in the battery only mode, BATFET is enabled, ADC is enabled | VBAT = 4V, No VBUS, BATFET is enabled, I2C enabled, ADC enabled, system is powered by battery. -40 °C < TJ < 60 °C | 260 | µA | ||
IQ_BAT_SD | Quiescent battery current (BAT) when the charger is in shutdown mode, BATFET is disabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in shutdown mode, ADC disabled, TJ < 60 °C | 0.1 | 0.2 | µA | |
IQ_BAT_SHIP | Quiescent battery current (BAT) when the charger is in ship mode, BATFET is disabled, ADC is disabled | VBAT = 4V, No VBUS, BATFET is disabled, I2C disabled, in ship mode, ADC disabled, TJ < 60 °C | 0.15 | 0.5 | µA | |
IQ_VBUS | Quiescent input current (VBUS) | VBUS = 5V, VBAT = 4V, charge disabled, converter switching, ISYS = 0A, PFM enabled | 450 | µA | ||
IQ_VBUS_HIZ | Quiescent input current (VBUS) in HIZ | VBUS = 5V, VBAT = 4V, HIZ mode, ADC disabled | 5 | 20 | µA | |
VBUS = 15V, VBAT = 4V, HIZ mode, ADC disabled | 20 | 35 | µA | |||
VBUS / VBAT SUPPLY | ||||||
VVBUS_OP | VBUS operating range | 3.9 | 18 | V | ||
VVBUS_UVLO | VBUS falling to turn off I2C, no battery | VBUS falling | 3.0 | 3.15 | 3.3 | V |
VVBUS_UVLOZ | VBUS rising for active I2C, no battery | VBUS rising | 3.2 | 3.35 | 3.5 | V |
VVBUS_OVP | VBUS overvoltage rising threshold | VBUS rising, VBUS_OVP = 0 | 6.1 | 6.4 | 6.7 | V |
VVBUS_OVPZ | VBUS overvoltage falling hreshold | VBUS rising, VBUS_OVP = 0 | 5.8 | 6.0 | 6.2 | V |
VVBUS_OVP | VBUS overvoltage rising threshold | VBUS rising, VBUS_OVP = 1 | 18.2 | 18.5 | 18.8 | V |
VVBUS_OVPZ | VBUS overvoltage falling threshold | VBUS falling, VBUS_OVP = 1 | 17.4 | 17.7 | 18.0 | V |
VSLEEP | Enter Sleep mode threshold | (VBUS - VBAT), VBUS falling | 9 | 45 | 85 | mV |
VSLEEPZ | Exit Sleep mode threshold | (VBUS - VBAT), VBUS rising | 115 | 220 | 340 | mV |
VBAT_UVLOZ | BAT voltage for active I2C, turn on BATFET, no VBUS | VBAT rising | 2.3 | 2.4 | 2.5 | V |
VBAT_UVLO | BAT voltage to turnoff I2C, turn off BATFET, no VBUS | VBAT falling, VBAT_UVLO = 0 | 2.1 | 2.2 | 2.3 | V |
VBAT falling, VBAT_UVLO = 1 | 1.7 | 1.8 | 1.9 | V | ||
VPOORSRC | Bad adapter detection threshold | VBUS falling | 3.6 | 3.7 | 3.75 | V |
IPOORSRC | Bad adapter detection current source | 10 | mA | |||
POWER-PATH MANAGEMENT | ||||||
VSYS_REG_ACC | Typical system voltage regulation | ISYS = 0A, VBAT > VSYSMIN, Charge Disabled. Offset above VBAT | 50 | mV | ||
ISYS = 0A, VBAT < VSYSMIN, Charge Disabled. Offset above VSYSMIN | 230 | mV | ||||
VSYSMIN_RNG | VSYSMIN register range | 2.56 | 3.84 | V | ||
VSYSMIN_REG_STEP | VSYSMIN register step size | 80 | mV | |||
VSYSMIN_REG_ACC | Minimum DC system voltage output | ISYS = 0A, VBAT < VSYSMIN = B00h (3.52V), Charge Disabled | 3.52 | 3.75 | V | |
VSYS_SHORT | VSYS short voltage falling threshold to enter forced PFM | 0.9 | V | |||
VSYS_SHORTZ | VSYS short voltage rising threshold to exit forced PFM | 1.1 | V | |||
BATTERY CHARGER | ||||||
VREG_RANGE | Typical charge voltage regulation range | 3.50 | 4.80 | V | ||
VREG_STEP | Typical charge voltage step | 10 | mV | |||
VREG_ACC | Charge voltage accuracy | TJ = 25°C | –0.3 | 0.3 | % | |
TJ = –10°C - 85°C | –0.4 | 0.4 | % | |||
ICHG_RANGE | Typical charge current regulation range | 0.08 | 3.04 | A | ||
ICHG_STEP | Typical charge current regulation step | 80 | mA | |||
ICHG_ACC | Charge current accuracy | VBAT = 3.1V or 3.8V, ICHG = 1760mA, TJ = –10°C - 85°C | –5 | 5 | % | |
VBAT = 3.1V or 3.8V, ICHG = 1040mA, TJ = –10°C - 85°C | –5.5 | 5.5 | % | |||
VBAT = 3.1V or 3.8V, ICHG = 320mA, TJ = –10°C - 85°C | –5.5 | 5.5 | % | |||
IPRECHG_RANGE | Typical pre-charge current range | 20 | 620 | mA | ||
IPRECHG_STEP | Typical pre-charge current step | 20 | mA | |||
IPRECHG_ACC | Pre-charge current accuracy when VBAT below VSYSMIN setting | VBAT = 2.5V, IPRECHG = 500mA, TJ = –10°C - 85°C | –12 | 12 | % | |
VBAT = 2.5V, IPRECHG = 200mA, TJ = –10°C - 85°C | –12 | 12 | % | |||
VBAT = 2.5V, IPRECHG = 100mA, TJ = –10°C - 85°C | –15 | 15 | % | |||
ITERM_RANGE | Typical termination current range | 10 | 620 | mA | ||
ITERM_STEP | Typical termination current step | 10 | mA | |||
ITERM_ACC | Termination current accuracy | ITERM = 20mA, TJ = –10°C - 85°C | –60 | 60 | % | |
ITERM = 100mA, TJ = –10°C - 85°C | –15 | 15 | % | |||
ITERM = 300mA, TJ = –10°C - 85°C | –13 | 13 | % | |||
VBAT_SHORTZ | Battery short voltage rising threshold to start pre-charge | VBAT rising | 2.25 | V | ||
VBAT_SHORT | Battery short voltage falling threshold to stop pre-charge | VBAT falling, VBAT_UVLO=0 | 2.05 | V | ||
VBAT_SHORT | Battery short voltage falling threshold to stop pre-charge | VBAT falling, VBAT_UVLO=1 | 1.85 | V | ||
IBAT_SHORT | Battery short trickle charging current | VBAT < VBAT_SHORTZ, ITRICKLE = 0 | 15 | 25 | 35 | mA |
VBAT < VBAT_SHORTZ, ITRICKLE = 1 | 62 | 82 | 102 | mA | ||
VBAT_LOWVZ | Battery voltage rising threshold | Transition from pre-charge to fast charge | 2.9 | 3.0 | 3.1 | V |
VBAT_LOWV | Battery voltage falling threshold | Transition from fast charge to pre-charge | 2.7 | 2.8 | 2.9 | V |
VRECHG | Battery recharge threshold below VREG | VBAT falling, VRECHG = 0 | 100 | mV | ||
VBAT falling, VRECHG = 1 | 200 | mV | ||||
IPMID_LOAD | PMID discharge load current | 20 | 30 | mA | ||
IBAT_LOAD | Battery discharge load current | 20 | 30 | mA | ||
ISYS_LOAD | System discharge load current | 20 | 30 | mA | ||
BATFET | ||||||
RBATFET | MOSFET on resistance from SYS to BAT | 15 | 25 | mΩ | ||
BATTERY PROTECTIONS | ||||||
VBAT_OVP | Battery overvoltage rising threshold | As percentage of VREG | 103 | 104 | 105 | % |
VBAT_OVPZ | Battery overvoltage falling threshold | As percentage of VREG | 101 | 102 | 103 | % |
IBATFET_OCP | BATFET over-current rising threshold | 6 | A | |||
IBAT_PK | Battery discharging peak current rising threshold | IBAT_PK = 00 | 1.5 | A | ||
IBAT_PK = 01 | 3 | A | ||||
IBAT_PK = 10 | 6 | A | ||||
IBAT_PK = 11 | 12 | A | ||||
INPUT VOLTAGE / CURRENT REGULATION | ||||||
VINDPM_RANGE | Typical input voltage regulation range | 3.8 | 16.8 | V | ||
VINDPM_STEP | Typical input voltage regulation step | 40 | mV | |||
VINDPM_ACC | Input voltage regulation accuracy | VINDPM=4.6V | –4 | 4 | % | |
VINDPM=8V | –3 | 3 | % | |||
VINDPM=16V | –2 | 2 | % | |||
VINDPM_BAT_TRACK | Battery tracking VINDPM accuracy | VBAT = 3.9V, VINDPM_BAT_TRACK=1, VINDPM = 4V | 4.15 | 4.3 | 4.45 | V |
IINDPM_RANGE | Typical input current regulation range | 0.1 | 3.2 | A | ||
IINDPM_STEP | Typical input current regulation step | 20 | mA | |||
IINDPM_ACC | Input current regulation accuracy | IINDPM = 500mA, VBUS=5V | 450 | 475 | 500 | mA |
IINDPM = 900mA, VBUS=5V | 810 | 855 | 900 | mA | ||
IINDPM = 1500mA, VBUS=5V | 1350 | 1425 | 1500 | mA | ||
KILIM | ILIM Pin Scale Factor, IINREG = KILIM / RILIM | INREG = 1.6 A | 2250 | 2500 | 2750 | AΩ |
THERMAL REGULATION AND THERMAL SHUTDOWN | ||||||
TREG | Junction temperature regulation accuracy | TREG = 1 | 120 | °C | ||
TREG = 0 | 60 | °C | ||||
TSHUT | Thermal Shutdown Rising Threshold | Temperature Increasing | 140 | °C | ||
TSHUT_HYS | Thermal Shutdown Falling Hysteresis | Temperature Decreasing by TSHUT_HYS | 30 | °C | ||
THERMISTOR COMPARATORS (CHARGE MODE) | ||||||
VTS_COLD | TS pin rising voltage threshold for TH1 comparator to transition from TS_COOL to TS_COLD. Charge suspended above this voltage. | As Percentage to TS pin bias reference (-5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110 | 75.0 | 75.5 | 76.0 | % |
As Percentage to TS pin bias reference (0°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111 | 72.8 | 73.3 | 73.8 | % | ||
VTS_COLDZ | TS pin falling voltage threshold for TH1 comparator to transition from TS_COLD to TS_COOL. TS_COOL charge settings resume below this voltage. | As Percentage to TS pin bias reference (-2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 100, 101, 110 | 73.9 | 74.4 | 74.9 | % |
As Percentage to TS pin bias reference (2.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 010, 011, 111 | 71.7 | 72.2 | 72.7 | % | ||
VTS_COOL | TS pin rising voltage threshold for TH2 comparator to transition from TS_PRECOOL to TS_COOL. TS_COOL charging settings used above this voltage. | As Percentage to TS pin bias reference (5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 100 | 70.6 | 71.1 | 71.6 | % |
As Percentage to TS pin bias reference (10°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 111 | 67.9 | 68.4 | 68.9 | % | ||
As Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 010 | 65.0 | 65.5 | 66.0 | % | ||
As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 011 | 61.9 | 62.4 | 62.9 | % | ||
VTS_COOLZ | TS pin falling voltage threshold for TH2 comparator to transition from TS_COOL to TS_PRECOOL. TS_PRECOOL charging settings resume below this voltage. | As Percentage to TS pin bias reference (7.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 100 | 69.3 | 69.8 | 70.3 | % |
As Percentage to TS pin bias reference (12.5°C w/ 103AT), TS_TH1_TH2_TH3 = 001, 101, 110, 111 | 66.6 | 67.1 | 67.6 | % | ||
As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010 | 63.7 | 64.2 | 64.7 | % | ||
As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 011 | 60.6 | 61.1 | 61.6 | % | ||
VTS_PRECOOL | TS pin rising voltage threshold for TH3 comparator to transition from TS_NORMAL to TS_PRECOOL. TS_PRECOOL charge settings used above this voltage. | As Percentage to TS pin bias reference (15°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101 | 65.0 | 65.5 | 66.0 | % |
As Percentage to TS pin bias reference (20°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111 | 61.9 | 62.4 | 62.9 | % | ||
VTS_PRECOOLZ | TS pin falling voltage threshold for TH3 comparator to transition from TS_PRECOOL to TS_NORMAL. Normal charging resumes below this voltage. | As Percentage to TS pin bias reference (17.5°C w/ 103AT), TS_TH1_TH2_TH3 = 000, 001, 100, 101 | 63.7 | 64.2 | 64.7 | % |
As Percentage to TS pin bias reference (22.5°C w/ 103AT), TS_TH1_TH2_TH3 = 010, 011, 110, 111 | 60.6 | 61.1 | 61.6 | % | ||
VTS_PREWARM | TS pin falling voltage threshold for TH4 comparator to transition from TS_NORMAL to TS_PREWARM. TS_PREWARM charging settings used below this voltage. | As Percentage to TS pin bias reference (35°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101 | 51.5 | 52.0 | 52.5 | % |
As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111 | 47.9 | 48.4 | 48.9 | % | ||
VTS_PREWARMZ | TS pin rising voltage threshold for TH4 comparator to transition from TS_PREWARM to TS_NORMAL. Normal charging resumes above this voltage. | As Percentage to TS pin bias reference (32.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 100, 101 | 53.3 | 53.8 | 54.3 | % |
As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011, 110, 111 | 49.2 | 49.7 | 50.2 | % | ||
VTS_WARM |
TS pin falling voltage threshold for TH5 comparator to transition from TS_PREWARM to TS_WARM. TS_WARM charging settings used below this voltage. | As Percentage to TS pin bias reference (40°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 100 | 47.9 | 48.4 | 48.9 | % |
As Percentage to TS pin bias reference (45°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 110 | 44.3 | 44.8 | 45.3 | % | ||
As Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 111 | 40.7 | 41.2 | 41.7 | % | ||
As Percentage to TS pin bias reference (55°C w/ 103AT), TS_TH4_TH5_TH6 = 011 | 37.2 | 37.7 | 38.2 | % | ||
VTS_WARMZ | TS pin rising voltage threshold for TH5 comparator to transition from TS_WARM to TS_PREWARM. TS_PREWARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (37.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 100 | 49.2 | 49.7 | 50.2 | % |
As Percentage to TS pin bias reference (42.5°C w/ 103AT), TS_TH4_TH5_TH6 = 001, 101, 110 | 45.6 | 46.1 | 46.6 | % | ||
As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 010, 111 | 42.0 | 42.5 | 43.0 | % | ||
As Percentage to TS pin bias reference (52.5°C w/ 103AT), TS_TH4_TH5_TH6 = 011 | 38.5 | 39 | 39.5 | % | ||
VTS_HOT | TS pin falling voltage threshold for TH6 comparator to transition from TS_WARM to TS_HOT. Charging is suspended below this voltage. | As Percentage to TS pin bias reference (50°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101 | 40.7 | 41.2 | 41.7 | % |
As Percentage to TS pin bias reference (60°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111 | 33.9 | 34.4 | 34.9 | % | ||
VTS_HOTZ | TS pin rising voltage threshold for TH6 comparator to transition from TS_HOT to TS_WARM. TS_WARM charging settings resume above this voltage. | As Percentage to TS pin bias reference (47.5°C w/ 103AT), TS_TH4_TH5_TH6 = 100 or 101 | 42.0 | 42.5 | 43.0 | % |
As Percentage to TS pin bias reference (57.5°C w/ 103AT), TS_TH4_TH5_TH6 = 000, 001, 010, 011, 110 or 111 | 35.2 | 35.7 | 36.2 | % | ||
SWITCHING CONVERTER | ||||||
FSW | PWM switching frequency | Oscillator frequency | 1.35 | 1.5 | 1.65 | MHz |
MOSFET TURN-ON RESISTANCE | ||||||
RQ1_ON | VBUS to PMID on resistance | Tj = –40°C-85°C | 26 | 34 | mΩ | |
RQ2_ON | Buck high-side switching MOSFET turn on resistance between PMID and SW | Tj = –40°C-85°C | 55 | 78 | mΩ | |
RQ3_ON | Buck low-side switching MOSFET turn on resistance between SW and PGND | Tj = –40°C-85°C | 60 | 90 | mΩ | |
REGN LDO | ||||||
VREGN | REGN LDO output voltage | VVBUS = 5V, IREGN = 20mA | 4.4 | 4.6 | V | |
VVBUS = 9V, IREGN = 20mA | 4.8 | 5.0 | 5.2 | V | ||
VREGNZ_OK | REGN not good falling threshold | Converter switching | 3.2 | V | ||
Converter not switching | 2.3 | V | ||||
IREGN_LIM | REGN LDO current limit | VVBUS = 5V, VREGN = 4.3V | 20 | mA | ||
ITS_BIAS_FAULT | Rising threshold to transition from TSBIAS good condition to fault condition | REGN=5V; ISINK applied on TS_BIAS pin | 2.5 | 4.5 | 8 | mA |
ITS_BIAS_FAULTZ | Falling threshold to transition from TSBIAS fault condition to good condition | REGN=5V; ISINK applied on TS_BIAS pin | 2 | 3.85 | 7 | mA |
ADC MEASUREMENT ACCURACY AND PERFORMANCE | ||||||
tADC_CONV | Conversion-time, Each Measurement | ADC_SAMPLE = 00 | 24 | ms | ||
ADC_SAMPLE = 01 | 12 | ms | ||||
ADC_SAMPLE = 10 | 6 | ms | ||||
ADC_SAMPLE = 11 | 3 | ms | ||||
ADCRES | Effective Resolution | ADC_SAMPLE = 00 | 11 | 12 | bits | |
ADC_SAMPLE = 01 | 10 | 11 | bits | |||
ADC_SAMPLE = 10 | 9 | 10 | bits | |||
ADC_SAMPLE = 11 | 8 | 9 | bits | |||
ADC MEASUREMENT RANGE AND LSB | ||||||
IBUS_ADC | ADC Bus Current Reading | Range | –4 | 4 | A | |
LSB | 2 | mA | ||||
VBUS_ADC | ADC VBUS Voltage Reading | Range | 0 | 18.00 | V | |
LSB | 3.97 | mV | ||||
VPMID_ADC | ADC PMID Voltage Reading | Range | 0 | 18.00 | V | |
LSB | 3.97 | mV | ||||
VBAT_ADC | ADC BAT Voltage Reading | Range | 0 | 5.572 | V | |
LSB | 1.99 | mV | ||||
VSYS_ADC | ADC SYS Voltage Reading | Range | 0 | 5.572 | V | |
LSB | 1.99 | mV | ||||
IBAT_ADC | ADC BAT Current Reading | Range | -7.5 | 4.0 | A | |
LSB | 4 | mA | ||||
TS_ADC | ADC TS Voltage Reading | Range as a percent of REGN (–40 ℃ to 85 ℃ for 103AT) | 20.9 | 83.2 | % | |
ADC TS Voltage Reading | LSB | 0.0961 | % | |||
TDIE_ADC | ADC Die Temperature Reading | Range | –40 | 140 | °C | |
LSB | 0.5 | °C | ||||
I2C INTERFACE (SCL, SDA) | ||||||
VIH | Input high threshold level, SDA and SCL | 0.78 | V | |||
VIL | Input low threshold level, SDA and SCL | 0.42 | V | |||
VOL_SDA | Output low threshold level | Sink current = 5mA, 1.2V VDD | 0.3 | V | ||
IBIAS | High-level leakage current | Pull up rail 1.8V | 1 | µA | ||
CBUS | Capacitive load for each bus line | 400 | pF | |||
LOGIC OUTPUT PIN (INT, PG, STAT) | ||||||
VOL | Output low threshold level | Sink current = 5mA | 0.3 | V | ||
IOUT_BIAS | High-level leakage current | Pull up rail 1.8V | 1 | µA | ||
LOGIC INPUT PIN (CE, QON) | ||||||
VIH_CE | Input high threshold level, /CE | 0.78 | V | |||
VIL_CE | Input low threshold level, /CE | 0.4 | V | |||
IIN_BIAS_CE | High-level leakage current, /CE | Pull up rail 1.8V | 1 | µA | ||
VIH_QON | Input high threshold level, /QON | 1.3 | V | |||
VIL_QON | Input low threshold level, /QON | 0.4 | V | |||
VQON | Internal /QON pull up | /QON is pulled up internally | 5 | V | ||
RQON | Internal /QON pull up resistance | 250 | kΩ |