SLUSE64 May   2021 BQ25723

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up Sequence
      2. 9.3.2  Vmin Active Protection (VAP) with Battery only
      3. 9.3.3  Two-Level Battery Discharge Current Limit
      4. 9.3.4  Fast Role Swap Feature
      5. 9.3.5  CHRG_OK Indicator
      6. 9.3.6  Input and Charge Current Sensing
      7. 9.3.7  Input Voltage and Current Limit Setup
      8. 9.3.8  Battery Cell Configuration
      9. 9.3.9  Device HIZ State
      10. 9.3.10 USB On-The-Go (OTG)
      11. 9.3.11 Converter Operation
      12. 9.3.12 Inductance Detection Through IADPT Pin
      13. 9.3.13 Converter Compensation
      14. 9.3.14 Continuous Conduction Mode (CCM)
      15. 9.3.15 Pulse Frequency Modulation (PFM)
      16. 9.3.16 Switching Frequency and Dithering Feature
      17. 9.3.17 Current and Power Monitor
        1. 9.3.17.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.17.2 High-Accuracy Power Sense Amplifier (PSYS)
      18. 9.3.18 Input Source Dynamic Power Management
      19. 9.3.19 Input Current Optimizer (ICO)
      20. 9.3.20 Two-Level Adapter Current Limit (Peak Power Mode)
      21. 9.3.21 Processor Hot Indication
        1. 9.3.21.1 PROCHOT During Low Power Mode
        2. 9.3.21.2 PROCHOT Status
      22. 9.3.22 Device Protection
        1. 9.3.22.1 Watchdog Timer
        2. 9.3.22.2 Input Overvoltage Protection (ACOV)
        3. 9.3.22.3 Input Overcurrent Protection (ACOC)
        4. 9.3.22.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.22.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.22.6 Battery Discharge Overcurrent Protection (BATOC)
        7. 9.3.22.7 Battery Short Protection (BATSP)
        8. 9.3.22.8 System Undervoltage Lockout (VSYS_UVP) and Hiccup Mode
        9. 9.3.22.9 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
        1. 9.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 9.4.1.2 Battery Charging
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)-Patented Technology
    5. 9.5 Programming
      1. 9.5.1 I2C Serial Interface
        1. 9.5.1.1 Timing Diagrams
        2. 9.5.1.2 Data Validity
        3. 9.5.1.3 START and STOP Conditions
        4. 9.5.1.4 Byte Format
        5. 9.5.1.5 Acknowledge (ACK) and Not Acknowledge (NACK)
        6. 9.5.1.6 Target Address and Data Direction Bit
        7. 9.5.1.7 Single Read and Write
        8. 9.5.1.8 Multi-Read and Multi-Write
        9. 9.5.1.9 Write 2-Byte I2C Commands
    6. 9.6 Register Map
      1. 9.6.1  ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
      2. 9.6.2  ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
        1. 9.6.2.1 Battery Pre-Charge Current Clamp
      3. 9.6.3  ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
      4. 9.6.4  ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
      5. 9.6.5  ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
      6. 9.6.6  IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
      7. 9.6.7  ADCVBUS/PSYS Register (I2C address = 27/26h)
      8. 9.6.8  ADCIBAT Register (I2C address = 29/28h)
      9. 9.6.9  ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
      10. 9.6.10 ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
      11. 9.6.11 ChargeOption1 Register (I2C address = 31/30h) [reset = 3300h]
      12. 9.6.12 ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
      13. 9.6.13 ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
      14. 9.6.14 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~4s) 4A09(1S)]
      15. 9.6.15 ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
      16. 9.6.16 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
      17. 9.6.17 ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
      18. 9.6.18 Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~4s)/0004h(1S)]
      19. 9.6.19 OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
      20. 9.6.20 OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
      21. 9.6.21 InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
      22. 9.6.22 VSYS_MIN Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
      23. 9.6.23 IIN_HOST Register (I2C address = 0F/0Eh) [reset = 4100h]
      24. 9.6.24 ID Registers
        1. 9.6.24.1 ManufactureID Register (I2C address = 2Eh) [reset = 40h]
        2. 9.6.24.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = E0h]
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 ACP-ACN Input Filter
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Input Capacitor
        4. 10.2.2.4 Output Capacitor
        5. 10.2.2.5 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Description (continued)

The NVDC configuration allows the system to be regulated based on battery voltage, but not drop below system minimum voltage. The system keeps operating even when the battery is completely discharged or removed. When load power exceeds input source rating, the battery goes into supplement mode and prevents the system from crashing.

During power up, the charger sets the converter to a buck, boost, or buck-boost configuration based on the input source and battery conditions. The charger seamlessly transitions between the buck, boost, and buck-boost operation modes without host control.

In the absence of an input source, the BQ25723 supports the USB On-the-Go (OTG) function from a 1- to 4-cell battery to generate an adjustable 3-V to 24-V output on VBUS with 8-mV resolution. The OTG output voltage transition slew rate can be configured to comply with the USB-PD 3.0 PPS specification.

When only a battery powers the system and no external load is connected to the USB OTG port, the BQ25723 implements the latest Intel Vmin Active Protection (VAP) feature, in which the device charges up the VBUS voltage from the battery to store some energy in the input decoupling capacitors. During a system peak power spike, the energy stored in the input capacitors supplements the system, to prevent the system voltage from dropping below the minimum system voltage and causing a system crash.

The BQ25723 monitors adapter current, battery current, and system power. The flexibly programmed PROCHOT output goes directly to the CPU for throttle back when needed.

The latest version of the USB-C PD specification includes Fast Role Swap (FRS) to ensure power role swapping occurs in a timely fashion so that the device(s) connected to the dock can avoid experiencing momentary power loss or glitching. This device integrates FRS in compliance with the PD specification.

TI patented switching frequency dithering pattern can significantly reduce EMI noise over the whole conductive EMI frequency range (150 kHz to 30 MHz). Multiple dithering scale options are available to provide flexibility for different applications to simplify EMI noise filter design.

The charger can be operated in the TI patented Pass Through Mode (PTM) to improve efficiency over the full load range. In PTM, input power is directly passed through the charger to the system. Switching losses of the MOSFETs and inductor core loss can be saved for high efficiency operation.

The BQ25723 is available in a 32-pin 4 mm × 4 mm WQFN package.