SLUSFK8 April   2024 BQ25770G

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics BQ25770G
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power-Up Sequence
      2. 7.3.2  MODE Pin Detection
      3. 7.3.3  REGN Regulator (REGN LDO)
      4. 7.3.4  Independent Comparator Function
      5. 7.3.5  Battery Charging Management
        1. 7.3.5.1 Autonomous Charging Cycle
        2. 7.3.5.2 Battery Charging Profile
        3. 7.3.5.3 Charging Termination
        4. 7.3.5.4 Charging Safety Timer
      6. 7.3.6  Temperature Regulation (TREG)
      7. 7.3.7  Vmin Active Protection (VAP) When Battery Only Mode
      8. 7.3.8  Two Level Battery Discharge Current Limit
      9. 7.3.9  Fast Role Swap Feature
      10. 7.3.10 CHRG_OK Indicator
      11. 7.3.11 Input and Charge Current Sensing
      12. 7.3.12 Input Current and Voltage Limit Setup
      13. 7.3.13 Battery Cell Configuration
      14. 7.3.14 Device HIZ State
      15. 7.3.15 USB On-The-Go (OTG)
      16. 7.3.16 Quasi Dual Phase Converter Operation
      17. 7.3.17 Continuous Conduction Mode (CCM)
      18. 7.3.18 Pulse Frequency Modulation (PFM)
      19. 7.3.19 Switching Frequency and Dithering Feature
      20. 7.3.20 Current and Power Monitor
        1. 7.3.20.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 7.3.20.2 High-Accuracy Power Sense Amplifier (PSYS)
      21. 7.3.21 Input Source Dynamic Power Management
      22. 7.3.22 Integrated 16-Bit ADC for Monitoring
      23. 7.3.23 Input Current Optimizer (ICO)
      24. 7.3.24 Two-Level Adapter Current Limit (Peak Power Mode)
      25. 7.3.25 Processor Hot Indication
        1. 7.3.25.1 PROCHOT During Low Power Mode
        2. 7.3.25.2 PROCHOT Status
      26. 7.3.26 Device Protection
        1. 7.3.26.1  Watchdog Timer (WD)
        2. 7.3.26.2  Input Overvoltage Protection (ACOV)
        3. 7.3.26.3  Input Overcurrent Protection (ACOC)
        4. 7.3.26.4  System Overvoltage Protection (SYSOVP)
        5. 7.3.26.5  Battery Overvoltage Protection (BATOVP)
        6. 7.3.26.6  Battery Charge Overcurrent Protection (BATCOC)
        7. 7.3.26.7  Battery Discharge Overcurrent Protection (BATDOC)
        8. 7.3.26.8  BATFET Charge Current Clamp Protection under LDO Regulation Mode
        9. 7.3.26.9  Sleep Comparator Protection Between VBUS and ACP_A (SC_VBUSACP)
        10. 7.3.26.10 High Duty Buck Exit Comparator Protection (HDBCP)
        11. 7.3.26.11 REGN Power Good Protection (REGN_PG)
        12. 7.3.26.12 System Under Voltage Lockout (VSYS_UVP) and Hiccup Mode
        13. 7.3.26.13 OTG Mode Over Voltage Protection (OTG_OVP)
        14. 7.3.26.14 OTG Mode Under Voltage Protection (OTG_UVP)
        15. 7.3.26.15 Thermal Shutdown (TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Forward Mode
        1. 7.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 7.4.1.2 Battery Charging
      2. 7.4.2 USB On-The-Go Mode
      3. 7.4.3 Pass Through Mode (PTM)-Patented Technology
      4. 7.4.4 Learn Mode
    5. 7.5 Programming
      1. 7.5.1 SMBus Interface
        1. 7.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 7.5.1.2 Timing Diagrams
    6. 7.6 BQ25770G Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 ACP-ACN Input Filter
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Input Capacitor
        4. 8.2.2.4 Output Capacitor
        5. 8.2.2.5 Power MOSFETs Selection
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Layout Example Reference Top View
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • REE|36
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.1 ACP-ACN Input Filter

The BQ25770G input current sensing through ACP_A-ACN_A and ACP_B-ACN_B are critical to ensure IINDPM/IOTG regulation stability. Parasitic inductance on board will generate high frequency ringing on ACP_A-ACN_A and ACP_B-ACN_B which overwhelms converter sensed inductor current information. Larger parasitic inductance will generate larger sense current ringing which could cause the average current control loop to go into oscillation. Therefore ACP_A-ACN_A and ACP_B-ACN_B sensing information need to be conditioned.

For real system board condition, we suggest using below circuit design to get best result and filter noise induced from different PCB parasitic factor. The filter is effective and the delay of on the sensed signal is small, therefore there is no concern for average current mode control. On ACN_A and ACN_B side the maximum capacitance is 1*10-μF MLCC shown below, the 10 nF + 1 nF EMI filtering capacitance can be neglected comparing to the 10-μF MLCC. When the 10-μF MLCC is used on ACN_A and ACN_B, then differential 100-nF ~ 220-nF filter capacitors are recommended for ACP_A-ACN_A and ACP_B-ACN_B to prevent pulse reverse current through RAC.

BQ25770G ACN-ACP Input Filter Figure 8-2 ACN-ACP Input Filter