SLUSFF9 November   2023 BQ27Z558

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Supply Current
    6. 6.6  Internal 1.8-V LDO (REG18)
    7. 6.7  I/O (PULS, INT)
    8. 6.8  Chip Enable (CE)
    9. 6.9  Internal Temperature Sensor
    10. 6.10 NTC Thermistor Measurement Support
    11. 6.11 Coulomb Counter (CC)
    12. 6.12 Analog Digital Converter (ADC)
    13. 6.13 Internal Oscillator Specifications
    14. 6.14 Voltage Reference1 (REF1)
    15. 6.15 Voltage Reference2 (REF2)
    16. 6.16 Flash Memory
    17. 6.17 I2C I/O
    18. 6.18 I2C Timing — 100 kHz
    19. 6.19 I2C Timing — 400 kHz
    20. 6.20 HDQ Timing
    21. 6.21 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  BQ27Z558 Processor
      2. 7.3.2  Battery Parameter Measurements
        1. 7.3.2.1 Coulomb Counter (CC)
        2. 7.3.2.2 CC Digital Filter
        3. 7.3.2.3 ADC Multiplexer
        4. 7.3.2.4 Analog-to-Digital Converter (ADC)
        5. 7.3.2.5 Internal Temperature Sensor
        6. 7.3.2.6 External Temperature Sensor Support
      3. 7.3.3  Power Supply Control
      4. 7.3.4  Bus Communication Interface
      5. 7.3.5  Low Frequency Oscillator
      6. 7.3.6  High Frequency Oscillator
      7. 7.3.7  1.8-V Low Dropout Regulator
      8. 7.3.8  Internal Voltage References
      9. 7.3.9  Gas Gauging
      10. 7.3.10 Charge Control Features
      11. 7.3.11 Authentication
    4. 7.4 Device Functional Modes
      1. 7.4.1 Lifetime Logging Features
      2. 7.4.2 Configuration
        1. 7.4.2.1 Coulomb Counting
        2. 7.4.2.2 Cell Voltage Measurements
        3. 7.4.2.3 Auto Calibration
        4. 7.4.2.4 Temperature Measurements
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Default)
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Changing Design Parameters
      3. 8.2.3 Calibration Process
      4. 8.2.4 Gauging Data Updates
        1. 8.2.4.1 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Device Functional Modes

This device supports five modes, but the current consumption varies, based on firmware control of certain functions and modes of operation:

  • NORMAL mode: In this mode, the device performs measurements, calculations, protections, and data updates in 250-ms intervals. Between these intervals, the device is operating in a reduced power stage to minimize total average current consumption.
  • SLEEP mode: In this mode, the device performs measurements, calculations, and data updates in adjustable time intervals. Between these intervals, the device is operating in a reduced power stage to minimize total average current consumption.
  • DEEP SLEEP mode: In this mode, the current is reduced slightly while current and voltage are still measured periodically, with a user-defined time between reads.
  • HIBERNATE mode: In this mode, the device is completely disabled with CE remaining high. This mode is exited upon two valid communications within a specified time window.
  • OFF mode: The device is completely disabled by pulling CE low. CE disables the internal voltage rail. All nonvolatile memory is unprotected.