SLUSE22B February   2020  – November 2022 BQ27Z561-R2

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current
    6. 7.6  Internal 1.8-V LDO (REG18)
    7. 7.7  I/O (PULS, INT)
    8. 7.8  Chip Enable (CE)
    9. 7.9  Internal Temperature Sensor
    10. 7.10 NTC Thermistor Measurement Support
    11. 7.11 Coulomb Counter (CC)
    12. 7.12 Analog Digital Converter (ADC)
    13. 7.13 Internal Oscillator Specifications
    14. 7.14 Voltage Reference1 (REF1)
    15. 7.15 Voltage Reference2 (REF2)
    16. 7.16 Flash Memory
    17. 7.17 I2C I/O
    18. 7.18 I2C Timing — 100 kHz
    19. 7.19 I2C Timing — 400 kHz
    20. 7.20 HDQ Timing
    21. 7.21 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  BQ27Z561-R2 Processor
      2. 8.3.2  Battery Parameter Measurements
        1. 8.3.2.1 Coulomb Counter (CC)
        2. 8.3.2.2 CC Digital Filter
        3. 8.3.2.3 ADC Multiplexer
        4. 8.3.2.4 Analog-to-Digital Converter (ADC)
        5. 8.3.2.5 Internal Temperature Sensor
        6. 8.3.2.6 External Temperature Sensor Support
      3. 8.3.3  Power Supply Control
      4. 8.3.4  Bus Communication Interface
      5. 8.3.5  Low Frequency Oscillator
      6. 8.3.6  High Frequency Oscillator
      7. 8.3.7  1.8-V Low Dropout Regulator
      8. 8.3.8  Internal Voltage References
      9. 8.3.9  Gas Gauging
      10. 8.3.10 Charge Control Features
      11. 8.3.11 Authentication
    4. 8.4 Device Functional Modes
      1. 8.4.1 Lifetime Logging Features
      2. 8.4.2 Configuration
        1. 8.4.2.1 Coulomb Counting
        2. 8.4.2.2 Cell Voltage Measurements
        3. 8.4.2.3 Auto Calibration
        4. 8.4.2.4 Temperature Measurements
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements (Default)
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Changing Design Parameters
      3. 9.2.3 Calibration Process
      4. 9.2.4 Gauging Data Updates
        1. 9.2.4.1 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.16 Flash Memory

Unless otherwise noted, characteristics noted under conditions of TA = –40℃ to 85℃
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Data retention10100Years
Flash programming write cyclesData Flash20000Cycles
Instruction Flash1000Cycles
t(ROWPROG)Row programming time40µs
t(MASSERASE)Mass-erase timeTA = –40°C to 85°C40ms
t(PAGEERASE)Page-erase timeTA = –40°C to 85°C40ms
IFLASHREADFlash read currentTA = –40°C to 85°C1mA
IFLASHWRTIEFlash write currentTA = –40°C to 85°C5mA
IFLASHERASEFlash erase currentTA = –40°C to 85°C15mA