SLUSDW2A November   2021  – February 2022 BQ27Z746

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1 Supply Current
      2. 6.5.2 Common Analog (LDO, LFO, HFO, REF1, REF2, I-WAKE)
      3. 6.5.3 Battery Protection (CHG, DSG)
      4. 6.5.4 Cell Sensing Output (BAT_SP, BAT_SN)
      5. 6.5.5 Gauge Measurements (ADC, CC, Temperature)
      6. 6.5.6 Flash Memory
    6. 6.6 Digital I/O: DC Characteristics
    7. 6.7 Digital I/O: Timing Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  BQ27Z746 Processor
      2. 7.3.2  Battery Parameter Measurements
        1. 7.3.2.1 Coulomb Counter (CC) and Digital Filter
        2. 7.3.2.2 ADC Multiplexer
        3. 7.3.2.3 Analog-to-Digital Converter (ADC)
        4. 7.3.2.4 Internal Temperature Sensor
        5. 7.3.2.5 External Temperature Sensor Support
      3. 7.3.3  Power Supply Control
      4. 7.3.4  Bus Communication Interface
      5. 7.3.5  Low Frequency Oscillator
      6. 7.3.6  High Frequency Oscillator
      7. 7.3.7  1.8-V Low Dropout Regulator
      8. 7.3.8  Internal Voltage References
      9. 7.3.9  Overcurrent in Discharge Protection
      10. 7.3.10 Overcurrent in Charge Protection
      11. 7.3.11 Short-Circuit Current in Discharge Protection
      12. 7.3.12 Primary Protection Features
      13. 7.3.13 Battery Sensing
      14. 7.3.14 Gas Gauging
      15. 7.3.15 Zero Volt Charging (ZVCHG)
      16. 7.3.16 Charge Control Features
      17. 7.3.17 Authentication
    4. 7.4 Device Functional Modes
      1. 7.4.1 Lifetime Logging Features
      2. 7.4.2 Configuration
        1. 7.4.2.1 Coulomb Counting
        2. 7.4.2.2 Cell Voltage Measurements
        3. 7.4.2.3 Auto Calibration
        4. 7.4.2.4 Temperature Measurements
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Default)
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Changing Design Parameters
      3. 8.2.3 Calibration Process
      4. 8.2.4 Gauging Data Updates
        1. 8.2.4.1 Application Curve
  9. 9 Power Supply Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Orderable, and Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YAH|15
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5.6 Flash Memory

Unless otherwise noted, characteristics noted under conditions of TA = –40 to 85℃
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Data retention10100Years
Flash programming write cyclesData Flash20000Cycles
Instruction Flash1000Cycles
t(ROWPROG)Row programming time40µs
t(MASSERASE)Mass-erase timeTA = –40°C to 85°C40ms
t(PAGEERASE)Page-erase timeTA = –40°C to 85°C40ms
IFLASHREADFlash Read CurrentTA = –40°C to 85°C1mA
IFLASHWRTIEFlash Write CurrentTA = –40°C to 85°C5mA
IFLASHERASEFlash Erase CurrentTA = –40°C to 85°C15mA