SLUSC67B March   2016  – October 2017

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Supply Current
    6. 6.6  Electrical Characteristics: Power Supply Control
    7. 6.7  Electrical Characteristics: AFE Power-On Reset
    8. 6.8  Electrical Characteristics: AFE Watchdog Reset and Wake Timer
    9. 6.9  Electrical Characteristics: Current Wake Comparator
    10. 6.10 Electrical Characteristics: VC1, VC2, VC3, VC4, BAT, PACK
    11. 6.11 Electrical Characteristics: SMBD, SMBC
    12. 6.12 Electrical Characteristics: PRES, BTP_INT, DISP
    13. 6.13 Electrical Characteristics: LEDCNTLA, LEDCNTLB, LEDCNTLC
    14. 6.14 Electrical Characteristics: Coulomb Counter
    15. 6.15 Electrical Characteristics: CC Digital Filter
    16. 6.16 Electrical Characteristics: ADC
    17. 6.17 Electrical Characteristics: ADC Digital Filter
    18. 6.18 Electrical Characteristics: CHG, DSG FET Drive
    19. 6.19 Electrical Characteristics: PCHG FET Drive
    20. 6.20 Electrical Characteristics: FUSE Drive
    21. 6.21 Electrical Characteristics: Internal Temperature Sensor
    22. 6.22 Electrical Characteristics: TS1, TS2, TS3, TS4
    23. 6.23 Electrical Characteristics: PTC, PTCEN
    24. 6.24 Electrical Characteristics: Internal 1.8-V LDO
    25. 6.25 Electrical Characteristics: High-Frequency Oscillator
    26. 6.26 Electrical Characteristics: Low-Frequency Oscillator
    27. 6.27 Electrical Characteristics: Voltage Reference 1
    28. 6.28 Electrical Characteristics: Voltage Reference 2
    29. 6.29 Electrical Characteristics: Instruction Flash
    30. 6.30 Electrical Characteristics: Data Flash
    31. 6.31 Electrical Characteristics: OCD, SCC, SCD1, SCD2 Current Protection Thresholds
    32. 6.32 Timing Requirements: OCD, SCC, SCD1, SCD2 Current Protection Timing
    33. 6.33 Timing Requirements: SMBus
    34. 6.34 Timing Requirements: SMBus XL
    35. 6.35 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Primary (1st Level) Safety Features
      2. 7.3.2  Secondary (2nd Level) Safety Features
      3. 7.3.3  Charge Control Features
      4. 7.3.4  Gas Gauging
      5. 7.3.5  Configuration
        1. 7.3.5.1 Oscillator Function
        2. 7.3.5.2 System Present Operation
        3. 7.3.5.3 Emergency Shutdown
        4. 7.3.5.4 1-Series, 2-Series, 3-Series, or 4-Series Cell Configuration
        5. 7.3.5.5 Cell Balancing
      6. 7.3.6  Battery Parameter Measurements
        1. 7.3.6.1 Charge and Discharge Counting
      7. 7.3.7  Battery Trip Point (BTP)
      8. 7.3.8  Lifetime Data Logging Features
      9. 7.3.9  Authentication
      10. 7.3.10 LED Display
      11. 7.3.11 Voltage
      12. 7.3.12 Current
      13. 7.3.13 Temperature
      14. 7.3.14 Communications
        1. 7.3.14.1 SMBus On and Off State
        2. 7.3.14.2 SBS Commands
    4. 7.4 Device Functional Modes
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 High-Current Path
          1. 8.2.2.1.1 Protection FETs
          2. 8.2.2.1.2 Chemical Fuse
          3. 8.2.2.1.3 Lithium-Ion Cell Connections
          4. 8.2.2.1.4 Sense Resistor
          5. 8.2.2.1.5 ESD Mitigation
        2. 8.2.2.2 Gas Gauge Circuit
          1. 8.2.2.2.1 Coulomb-Counting Interface
          2. 8.2.2.2.2 Power Supply Decoupling and PBI
          3. 8.2.2.2.3 System Present
          4. 8.2.2.2.4 SMBus Communication
          5. 8.2.2.2.5 FUSE Circuitry
        3. 8.2.2.3 Secondary-Current Protection
          1. 8.2.2.3.1 Cell and Battery Inputs
          2. 8.2.2.3.2 External Cell Balancing
          3. 8.2.2.3.3 PACK and FET Control
          4. 8.2.2.3.4 Temperature Output
          5. 8.2.2.3.5 LEDs
          6. 8.2.2.3.6 Safety PTC Thermistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Protector FET Bypass and Pack Terminal Bypass Capacitors
      2. 10.1.2 ESD Spark Gap
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation, see the bq4050 Technical Reference Manual (SLUUAQ3).

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

Windows is a registered trademark of Microsoft.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.