SBOS765 January   2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High Input Common-Mode Range
      2. 7.3.2 High Current-Sense Accuracy Over a Wide Dynamic Range
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
        1. 7.4.1.1 Device Power-Up
        2. 7.4.1.2 Input Differential Overload
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage 7 V
Analog inputs, VIN+, VIN–(2) Differential (VIN+) – (VIN–) –26 26 V
Common-mode(3) GND – 0.3 26
Output(3) GND – 0.3 (V+) + 0.3 V
Input current Into all pins(3) 5 mA
Temperature Operating, TA –40 125 °C
Junction, TJ 150
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input voltage 12 V
VS Operating supply voltage (applied to V+) 3.3 V
TA Operating free-air temperature –40 105 °C

6.4 Thermal Information

THERMAL METRIC(1) bq500100 UNIT
DCK (SC70)
6 PINS
RθJA Junction-to-ambient thermal resistance 227.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 79.5 °C/W
RθJB Junction-to-board thermal resistance 72.1 °C/W
ψJT Junction-to-top characterization parameter 3.6 °C/W
ψJB Junction-to-board characterization parameter 70.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

at TA = 25°C, V+ = 5 V, VIN+ = 12 V, and VSENSE = VIN+ – VIN– (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range TA = –40°C to +105°C 0 20 V
CMR Common-mode rejection VIN+ = 0 V to 20 V,
TA = –40°C to +105°C		 100 120 dB
VOS Offset voltage, RTI(1) ±5 ±150 μV
dVOS/dT Offset voltage, RTI vs temperature TA = –40°C to +105°C 0.1 0.5 μV/°C
PSR Power-supply rejection V+ = 2.7 V to 6 V, VIN+ = 18 V ±0.1 μV/V
IB Input bias current 28 μA
IOS Input offset current ±0.02 μA
OUTPUT
G Gain 49 50 51 V/V
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2)
Swing to V+ power-supply rail RL = 10 kΩ to GND,
TA = –40°C to +105°C		 (V+) – 0.05 (V+) – 0.2 V
Swing to GND RL = 10 kΩ to GND,
TA = –40°C to +105°C		 (VGND) + 0.005 (VGND) + 0.05 V
FREQUENCY RESPONSE
GBW Bandwidth CLOAD = 10 pF 80 kHz
SR Slew rate 0.4 V/μs
NOISE, RTI(1)
Voltage noise density 25 nV/√Hz
POWER SUPPLY
VS Operating voltage range (applied to V+) TA = –40°C to +105°C 2.7 6 V
IQ Quiescent current VSENSE = 0 mV 65 100 μA
TA = –40°C to +105°C 115
TEMPERATURE RANGE
Specified range –40 105 °C
Operating range –40 125 °C
(1) RTI = Referred-to-input.
(2) See typical characteristic curve, Output Voltage Swing vs Output Current (Figure 1).

6.6 Typical Characteristics

performance measured at TA = 25°C, V+ = 5 V, and VIN+ = 12 V (unless otherwise noted)
bq500100 tc_claw_sbos765.gif
Figure 1. Output Voltage Swing vs Output Current
bq500100 tc_ibc-cmvsv_sbos765.gif
V+ = 0 V
Figure 3. Input Bias Current vs Common-Mode Voltage
(Shutdown)
bq500100 tc_qc-tmp_bos469.gif
Figure 5. Quiescent Current vs Temperature
bq500100 tc_ibc-cvsv_sbos765.gif
V+ = 5 V
Figure 2. Input Bias Current vs Common-Mode Voltage
bq500100 tc_ibc-tmp_bos469.gif
Figure 4. Input Bias Current vs Temperature