SLPS585 March   2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Powering bq500101 And Gate Drivers
      2. 7.3.2 Undervoltage Lockout Protection (UVLO)
      3. 7.3.3 Integrated Boost-Switch
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application Curves
    3. 8.3 System Example
      1. 8.3.1 Power Loss Curves
      2. 8.3.2 Safe Operating Area (SOA) Curves
      3. 8.3.3 Normalized Curves
        1. 8.3.3.1 Calculating Power Loss and SOA
          1. 8.3.3.1.1 Design Example
          2. 8.3.3.1.2 Calculating Power Loss
          3. 8.3.3.1.3 Calculating SOA Adjustments
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Trademarks
    2. 10.2 Electrostatic Discharge Caution
    3. 10.3 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Drawing
    2. 11.2 Recommended PCB Land Pattern
    3. 11.3 Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPC|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Device and Documentation Support

10.1 Trademarks

NexFET is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

10.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

10.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.