SLUSE96 November   2023 BQ76907

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information bq76907
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  REGOUT LDO
    8. 6.8  Voltage References
    9. 6.9  Coulomb Counter
    10. 6.10 Coulomb Counter Digital Filter
    11. 6.11 Current Wake Detector
    12. 6.12 Analog-to-Digital Converter
    13. 6.13 Cell Balancing
    14. 6.14 Internal Temperature Sensor
    15. 6.15 Thermistor Measurement
    16. 6.16 Hardware Overtemperature Detector
    17. 6.17 Internal Oscillator
    18. 6.18 Charge and Discharge FET Drivers
    19. 6.19 Comparator-Based Protection Subsystem
    20. 6.20 Timing Requirements - I2C Interface, 100kHz Mode
    21. 6.21 Timing Requirements - I2C Interface, 400kHz Mode
    22. 6.22 Timing Diagram
    23. 6.23 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Configuration
      1. 7.3.1 Commands and Subcommands
      2. 7.3.2 Configuration Using OTP or Registers
      3. 7.3.3 Device Security
    4. 7.4 Device Hardware Features
      1. 7.4.1  Voltage ADC
      2. 7.4.2  Coulomb Counter and Digital Filters
      3. 7.4.3  Protection FET Drivers
      4. 7.4.4  Voltage References
      5. 7.4.5  Multiplexer
      6. 7.4.6  LDOs
      7. 7.4.7  Standalone Versus Host Interface
      8. 7.4.8  ALERT Pin Operation
      9. 7.4.9  Low Frequency Oscillator
      10. 7.4.10 I2C Serial Communications Interface
    5. 7.5 Measurement Subsystem
      1. 7.5.1 Voltage Measurement
        1. 7.5.1.1 Voltage ADC Scheduling
        2. 7.5.1.2 Unused VC Pins
        3. 7.5.1.3 General Purpose ADCIN Functionality
      2. 7.5.2 Current Measurement and Charge Integration
      3. 7.5.3 Internal Temperature Measurement
      4. 7.5.4 Thermistor Temperature Measurement
      5. 7.5.5 Factory Trim and Calibration
    6. 7.6 Protection Subsystem
      1. 7.6.1 Protections Overview
      2. 7.6.2 Primary Protections
      3. 7.6.3 CHG Detector
      4. 7.6.4 Cell Open-Wire Protection
      5. 7.6.5 Diagnostic Checks
    7. 7.7 Cell Balancing
    8. 7.8 Device Operational Modes
      1. 7.8.1 Overview of Operational Modes
      2. 7.8.2 NORMAL Mode
      3. 7.8.3 SLEEP Mode
      4. 7.8.4 DEEPSLEEP Mode
      5. 7.8.5 SHUTDOWN Mode
      6. 7.8.6 CONFIG_UPDATE Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Random Cell Connection Support
      5. 8.2.5 Startup Timing
      6. 8.2.6 FET Driver Turn-Off
      7. 8.2.7 Usage of Unused Pins
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Introduction to Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.9 Coulomb Counter

Typical values stated where TA = 25°C and VBAT = 25.9 V, min/max values stated where TA = -40°C to 110°C and VBAT = 3 V to 38.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(CC_IN) Input voltage range for measurements(3) VSRP - VSRN –0.2 0.2 V
V(CC_IN) Input voltage range for measurements(3) VSRP, VSRN –0.2 0.2 V
B(CM_INL) Integral nonlinearity(2) 16-bit, best fit straight line over input voltage range of -200 mV to 0 mV, using Current() command data with Curr Gain = 32, such that 1-LSB ≈ 7.52 µV, at 25℃ ±0.42 ±1.23 LSB(1)
B(CM_INL) Integral nonlinearity(2) 16-bit, best fit straight line over input voltage range of -200 mV to 100 mV, using Current() command data with Curr Gain = 32, such that 1-LSB ≈ 7.52 µV, at 25℃ ±0.86 ±3.2 LSB(1)
V(CM_OFF) Offset error 16-bit, uncalibrated, using Current() command data with Curr Gain = 32, such that 1-LSB ≈ 7.52 µV -1.37 0.033 1.49 µV
V(CM_OFF_DRIFT) Offset error drift(2) 16-bit, uncalibrated, using Current() command data with Curr Gain = 32, such that 1-LSB ≈ 7.52 µV –0.032 0.032 µV/°C
B(CM_GAIN) Gain(2) Using 16-bit data from Current() command, with Curr Gain = 32, VSRP - VSRN = ±0.2V 131949 132910 133981 LSB/V(1)
B(CM_GAIN) Gain drift (2) Using 16-bit data from Current() command, with Curr Gain = 32, VSRP - VSRN = ±0.2V -19 0.72 16 LSB/V/°C(1)
R(CM_IN) Effective input resistance(3)(4) 2 MΩ
(1) 1 LSB = VREF2 / (5 x 2N-1) ≈ 1.227 / (5 x 215) = 7.49µV
(2) Specified by characterization
(3) Specified by design.
(4) Average effective differential input resistance with device operating in NORMAL mode, 0.1 V differential input applied.