SLUSFC9 December   2023 BQ76972

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information BQ76952
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  LD Pin
    8. 6.8  Precharge (PCHG) and Predischarge (PDSG) FET Drive
    9. 6.9  FUSE Pin Functionality
    10. 6.10 REG18 LDO
    11. 6.11 REG0 Pre-regulator
    12. 6.12 REG1 LDO
    13. 6.13 REG2 LDO
    14. 6.14 Voltage References
    15. 6.15 Coulomb Counter
    16. 6.16 Coulomb Counter Digital Filter (CC1)
    17. 6.17 Current Measurement Digital Filter (CC2)
    18. 6.18 Current Wake Detector
    19. 6.19 Analog-to-Digital Converter
    20. 6.20 Cell Voltage Measurement Accuracy
    21. 6.21 Cell Balancing
    22. 6.22 Cell Open Wire Detector
    23. 6.23 Internal Temperature Sensor
    24. 6.24 Thermistor Measurement
    25. 6.25 Internal Oscillators
    26. 6.26 High-side NFET Drivers
    27. 6.27 Comparator-Based Protection Subsystem
    28. 6.28 Timing Requirements - I2C Interface, 100kHz Mode
    29. 6.29 Timing Requirements - I2C Interface, 400kHz Mode
    30. 6.30 Timing Requirements - HDQ Interface
    31. 6.31 Timing Requirements - SPI Interface
    32. 6.32 Interface Timing Diagrams
    33. 6.33 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1  Overview
    2. 7.2  Functional Block Diagram
    3. 7.3  BQ76972 Device Versions
    4. 7.4  Diagnostics
    5. 7.5  Device Configuration
      1. 7.5.1 Commands and Subcommands
      2. 7.5.2 Configuration Using OTP or Registers
      3. 7.5.3 Device Security
      4. 7.5.4 Scratchpad Memory
    6. 7.6  Measurement Subsystem
      1. 7.6.1  Voltage Measurement
        1. 7.6.1.1 Voltage Measurement Schedule
        2. 7.6.1.2 Usage of VC Pins for Cells Versus Interconnect
        3. 7.6.1.3 Cell 1 Voltage Validation During SLEEP Mode
      2. 7.6.2  General Purpose ADCIN Functionality
      3. 7.6.3  Coulomb Counter and Digital Filters
      4. 7.6.4  Synchronized Voltage and Current Measurement
      5. 7.6.5  Internal Temperature Measurement
      6. 7.6.6  Thermistor Temperature Measurement
      7. 7.6.7  Factory Trim of Voltage ADC
      8. 7.6.8  Cell Voltage Measurement Accuracy
        1. 7.6.8.1 Fixed Offset Adjustment
        2. 7.6.8.2 Cell Offset Calibration
      9. 7.6.9  Voltage Calibration (ADC Measurements)
      10. 7.6.10 Voltage Calibration (COV and CUV Protections)
      11. 7.6.11 Current Calibration
      12. 7.6.12 Temperature Calibration
    7. 7.7  Primary and Secondary Protection Subsystems
      1. 7.7.1 Protections Overview
      2. 7.7.2 Primary Protections
      3. 7.7.3 Secondary Protections
      4. 7.7.4 High-Side NFET Drivers
      5. 7.7.5 Protection FETs Configuration and Control
        1. 7.7.5.1 FET Configuration
        2. 7.7.5.2 PRECHARGE and PREDISCHARGE Modes
      6. 7.7.6 Load Detect Functionality
    8. 7.8  Device Hardware Features
      1. 7.8.1  Voltage References
      2. 7.8.2  ADC Multiplexer
      3. 7.8.3  LDOs
        1. 7.8.3.1 Preregulator Control
        2. 7.8.3.2 REG1 and REG2 LDO Controls
      4. 7.8.4  Standalone Versus Host Interface
      5. 7.8.5  Multifunction Pin Controls
      6. 7.8.6  RST_SHUT Pin Operation
      7. 7.8.7  CFETOFF, DFETOFF, and BOTHOFF Pin Functionality
      8. 7.8.8  ALERT Pin Operation
      9. 7.8.9  DDSG and DCHG Pin Operation
      10. 7.8.10 Fuse Drive
      11. 7.8.11 Cell Open Wire
      12. 7.8.12 Low Frequency Oscillator
      13. 7.8.13 High Frequency Oscillator
    9. 7.9  Device Functional Modes
      1. 7.9.1 Overview
      2. 7.9.2 NORMAL Mode
      3. 7.9.3 SLEEP Mode
      4. 7.9.4 DEEPSLEEP Mode
      5. 7.9.5 SHUTDOWN Mode
      6. 7.9.6 CONFIG_UPDATE Mode
    10. 7.10 Serial Communications Interface
      1. 7.10.1 Serial Communications Overview
      2. 7.10.2 I2C Communications
      3. 7.10.3 SPI Communications
        1. 7.10.3.1 SPI Protocol
      4. 7.10.4 HDQ Communications
    11. 7.11 Cell Balancing
      1. 7.11.1 Cell Balancing Overview
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Example)
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Calibration Process
    3. 8.3 Random Cell Connection Support
    4. 8.4 Startup Timing
    5. 8.5 FET Driver Turn-Off
    6. 8.6 Unused Pins
    7. 8.7 Power Supply Requirements
    8. 8.8 Layout
      1. 8.8.1 Layout Guidelines
      2. 8.8.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.7.5.1 FET Configuration

The BQ76972 device supports both a series configuration and a parallel configuration for the protection FETs in the system, as well as a system that does not use one or both FETs. When a series FET configuration is used, the BQ76972 device provides body diode protection for the case when one FET is off and one FET is on.

If the CHG FET is off, the DSG or PDSG FET is on, and a discharge current greater in magnitude than a programmable threshold (that is, a significant discharging current) is detected, the device will turn on the CHG FET, to avoid current flowing through the CHG FET body diode and damaging the FET. When the current rises above the threshold (that is, less discharge current flowing), the CHG FET will be turned off again if the reasons for its turn-off are still present.

If the DSG FET is off, the CHG or PCHG FET is on, and a current in excess of a programmable threshold (that is, a significant charging current) is detected, the device will turn on the DSG FET, to avoid current flowing through the DSG FET body diode and damaging the FET. When the current falls below the threshold (that is, less charging current flowing), the DSG FET will be turned off again if the reasons for its turn-off are still present.

When a parallel configuration is used, the body diode protection is disabled.