SLUSCM3K June   2016  – July 2020 BQ77904 , BQ77905

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Device Functionality Summary
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Protection Summary
      2. 8.3.2  Fault Operation
        1. 8.3.2.1  Operation in OV
        2. 8.3.2.2  Operation in UV
        3. 8.3.2.3  Operation in OW
        4. 8.3.2.4  Operation in OCD1
        5. 8.3.2.5  Operation in OCD2
        6. 8.3.2.6  Operation in SCD
        7. 8.3.2.7  Overcurrent Recovery Timer
        8. 8.3.2.8  Load Removal Detection
        9. 8.3.2.9  Load Removal Detection in UV
        10. 8.3.2.10 Operation in OTC
        11. 8.3.2.11 Operation in OTD
        12. 8.3.2.12 Operation in UTC
        13. 8.3.2.13 Operation in UTD
      3. 8.3.3  Protection Response and Recovery Summary
      4. 8.3.4  Configuration CRC Check and Comparator Built-In-Self-Test
      5. 8.3.5  Fault Detection Method
        1. 8.3.5.1 Filtered Fault Detection
      6. 8.3.6  State Comparator
      7. 8.3.7  DSG FET Driver Operation
      8. 8.3.8  CHG FET Driver Operation
      9. 8.3.9  External Override of CHG and DSG Drivers
      10. 8.3.10 Configuring 3-S, 4-S, or 5-S Mode
      11. 8.3.11 Stacking Implementations
      12. 8.3.12 Zero-Volt Battery Charging Inhibition
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Modes
        1. 8.4.1.1 Power-On Reset (POR)
        2. 8.4.1.2 FAULT Mode
        3. 8.4.1.3 SHUTDOWN Mode
        4. 8.4.1.4 Customer Fast Production Test Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended System Implementation
        1. 9.1.1.1 CHG and DSG FET Rise and Fall Time
        2. 9.1.1.2 Protecting CHG and LD
        3. 9.1.1.3 Protecting CHG FET
        4. 9.1.1.4 Using Load Detect for UV Fault Recovery
        5. 9.1.1.5 Temperature Protection
        6. 9.1.1.6 Adding Filter to Sense Resistor
        7. 9.1.1.7 Using a State Comparator in an Application
          1. 9.1.1.7.1 Examples
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Example
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Links
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

DSG FET Driver Operation

The DSG pin is driven high only when no related faults (UV, OW, OTD, UTD, OCD1, OCD2, SCD, and CTRD are disabled) are present. It is a fast switching driver with a target on resistance of about 15–20 Ω and an off resistance of RDSGOFF. It is designed to allow users to select the optimized RGS value to archive the desirable FET rise and fall time per the application requirement and the choice of FET characteristics. When the DSG FET is turned off, the DSG pin drives low and all overcurrent protections (OCD1, OCD2, SCD) are disabled to better conserve power. These resume operation when the DSF FET is turned on. The device provides FET body diode protection through the state comparator if one FET driver is on and the other FET driver is off.

The DSG driver may be turned on to prevent FET damage if the battery pack is charging while a discharge inhibit fault condition is present. This is done with the state comparator. The state comparator (with the VSTATE_C threshold) remains on for the entire duration of a DSG fault with no CHG fault event.

  • If (SRP-SRN) ≤ VSTATE_C and no charge event is detected, the DSG FET output will remain OFF due to the present of a DSG fault.
  • If (SRP-SRN) > VSTATE_C and a charge event is detected, the DSG FET output will turn ON for body diode protection.

See the Section 8.3.6 section for details.

The presence of any related faults, as shown in Figure 8-6, results in the DSGFET_OFF signal .

GUID-A6AB92F4-5B1B-4EC7-A93E-C4EDE5B51509-low.gifFigure 8-6 Faults that Can Qualify DSGFET_OFF