SWRS123D July   2013  – October 2014 CC1200

PRODUCTION DATA.  

  1. 1 Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Diagram
    2. 3.2 Pin Configuration
  4. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Handling Ratings
    3. 4.3  Recommended Operating Conditions (General Characteristics)
    4. 4.4  Thermal Resistance Characteristics for RHB Package
    5. 4.5  RF Characteristics
    6. 4.6  Regulatory Standards
    7. 4.7  Current Consumption, Static Modes
    8. 4.8  Current Consumption, Transmit Modes
      1. 4.8.1 868-, 915-, and 920-MHz Bands (High-Performance Mode)
      2. 4.8.2 433-MHz Band (High-Performance Mode)
      3. 4.8.3 169-MHz Band (High-Performance Mode)
      4. 4.8.4 Low-Power Mode
    9. 4.9  Current Consumption, Receive Modes
      1. 4.9.1 High-Performance Mode
      2. 4.9.2 Low-Power Mode
    10. 4.10 Receive Parameters
      1. 4.10.1 General Receive Parameters (High-Performance Mode)
      2. 4.10.2 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)
      3. 4.10.3 RX Performance in 433-MHz Band (High-Performance Mode)
      4. 4.10.4 RX Performance in 169-MHz Band (High-Performance Mode)
      5. 4.10.5 RX Performance in Low-Power Mode
    11. 4.11 Transmit Parameters
    12. 4.12 PLL Parameters
      1. 4.12.1 High-Performance Mode
      2. 4.12.2 Low-Power Mode
    13. 4.13 Wake-up and Timing
    14. 4.14 40-MHz Crystal Oscillator
    15. 4.15 40-MHz Clock Input (TCXO)data to TCXO table
    16. 4.16 32-kHz Clock Input
    17. 4.17 40-kHz RC Oscillator
    18. 4.18 I/O and Reset
    19. 4.19 Temperature Sensor
    20. 4.20 Typical Characteristics
  5. 5Detailed Description
    1. 5.1 Block Diagram
    2. 5.2 Frequency Synthesizer
    3. 5.3 Receiver
    4. 5.4 Transmitter
    5. 5.5 Radio Control and User Interface
    6. 5.6 Enhanced Wake-On-Radio (eWOR)
    7. 5.7 RX Sniff Mode
    8. 5.8 Antenna Diversity
    9. 5.9 WaveMatch
  6. 6Typical Application Circuit
  7. 7Device and Documentation Support
    1. 7.1 Device Support
      1. 7.1.1 Development Support
        1. 7.1.1.1 Configuration Software
      2. 7.1.2 Device and Development-Support Tool Nomenclature
    2. 7.2 Documentation Support
    3. 7.3 Community Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  8. 8Mechanical Packaging and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Specifications

All measurements performed on CC1200EM_868_930 rev.1.0.0, CC1200EM_420_470 rev.1.0.1, or CC1200EM_169 rev.1.2.

4.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN MAX UNIT CONDITION
Supply voltage (VDD, AVDD_x) –0.3 3.9 V All supply pins must have the same voltage
Input RF level +10 dBm
Voltage on any digital pin –0.3 VDD+0.3 V max 3.9 V
Voltage on analog pins
(including DCPL pins)		 –0.3 2.0 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under general characteristics is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.

4.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –40 125 °C
VESD Electrostatic discharge (ESD) performance: Human body model (HBM), per ANSI/ESDA/JEDEC JS001(1) –2 2 kV
Charged device model (CDM), per JESD22-C101(2) All pins –500 500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER MIN TYP MAX UNIT CONDITION
Voltage supply range 2.0 3.6 V All supply pins must have the same voltage
Voltage on digital inputs 0 VDD V
Temperature range –40 85 °C Ambient

4.4 Thermal Resistance Characteristics for RHB Package

°C/W(1) AIR FLOW (m/s)(2)
RθJC Junction-to-case (top) 21.1 0.00
RθJB Junction-to-board 5.3 0.00
RθJA Junction-to-free air 31.3 0.00
PsiJT Junction-to-package top 0.2 0.00
PsiJB Junction-to-board 5.3 0.00
RθJC Junction-to-case (bottom) 0.8 0.00
(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.
(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency bands 820 950 MHz
410 475 MHz
164 190 MHz
(274) (316.6) MHz Contact TI for more information about the use of these frequency bands.
(205) (237.5) MHz
(137) (158.3) MHz
Frequency resolution 30 Hz In 820–950 MHz band
15 Hz In 410–475 MHz band
6 Hz In 164–190 MHz band
Data rate 0 1250 kbps Packet mode
0 625 kbps Transparent mode

4.6 Regulatory Standards

PERFORMANCE MODE FREQUENCY BAND SUITABLE FOR COMPLIANCE WITH COMMENTS
High-performance mode 820–950 MHz ARIB STD-T108
ETSI EN 300 220 receiver,
categories 2 and 3
FCC Part 15.247
FCC Part 15.249
FCC Part 90 Mask G
FCC Part 90 Mask J 		Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190 device
410–475 MHz ARIB STD-T67
ARIB RCR STD-T30
ETSI EN 300 220 receiver,
categories 2 and 3
FCC Part 90 Mask D
FCC Part 90 Mask G 		Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
164–190 MHz ETSI EN 300 220 receiver, category 1
FCC Part 90 Mask D 		Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
Low-power mode 820–950 MHz ETSI EN 300 220 receiver,
categories 2 and 3
FCC Part 15.247
FCC Part 15.249
410–475 MHz ETSI EN 300 220 receiver,
categories 2 and 3
164–190 MHz ETSI EN 300 220

4.7 Current Consumption, Static Modes

TA = 25°C, VDD = 3.0 V if nothing else stated
PARAMETER MIN TYP MAX UNIT CONDITION
Power down with retention 0.12 1 µA
0.5 µA Low-power RC oscillator running
XOFF mode 180 µA Crystal oscillator / TCXO disabled
IDLE mode 1.5 mA Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 868-, 915-, and 920-MHz Bands (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +14 dBm 46 mA
TX current consumption +10 dBm 36 mA

4.8.2 433-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 49 mA
TX current consumption +14 dBm 46 mA
TX current consumption +10 dBm 35 mA

4.8.3 169-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +15 dBm 54 mA
TX current consumption +14 dBm 50 mA
TX current consumption +10 dBm 39 mA

4.8.4 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
TX current consumption +10 dBm 33.6 mA

4.9 Current Consumption, Receive Modes

4.9.1 High-Performance Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
RX Wait for sync Using RX sniff mode, where the receiver wakes up at regular intervals looking for an incoming packet.
Sniff mode configured to terminate on Carrier Sense, and is measured using RSSI_VALID _COUNT = 1 (0 for 1.2 kbps with 50 kHz Channel Filter Bandwidth), AGC_WIN_SIZE = 0, and SETTLE_WAIT = 1.(1)
1.2 kbps, 4-byte preamble (50 kHz Channel Filter Bandwidth) 0.5 mA
1.2 kbps, 3-byte preamble (11 kHz Channel Filter Bandwidth) 3.1 mA
38.4 kbps, 12-byte preamble 3.4 mA
50 kbps, 24-byte preamble 2.1 mA
RX Peak Current Peak current consumption during packet reception
1.2kbps 23.5 mA
Average current consumption
Check for data packet every 1 second using Wake on Radio		 8 µA 50 kbps, 5-byte preamble, 40-kHz RC oscillator used as sleep timer
(1) See the sniff mode design note for more information (SWRA428).

4.9.2 Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
RX Peak Current Low-power RX mode Peak current consumption during packet reception at the sensitivity limit
1.2 kbps 19 mA

4.10 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%. Selectivity and blocking is measured with the desired signal 3 dB greater than the sensitivity level.

4.10.1 General Receive Parameters (High-Performance Mode)

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Saturation +10 dBm
Digital channel filter programmable bandwidth 9.5 1600 kHz
IIP3 –14 dBm At maximum gain
Data rate offset tolerance ±14 % With carrier sense detection enabled
±1600 ppm With carrier sense detection disabled
Spurious emissions Radiated emissions measured according to ETSI EN 300 220, fc = 869.5 MHz
1–13 GHz (VCO leakage at 3.5 GHz) < –56 dBm
30 MHz to 1 GHz < –57 dBm
Optimum source impedance (Differential or single-ended RX configurations)
868-, 915-, and 920-MHz bands 60 + j60 / 30 + j30 Ω
433-MHz band 100 + j60 / 50+ j30 Ω
169-MHz band 140 + j40 / 70 + j20 Ω

4.10.2 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity –122 dBm 1.2 kbps 2-FSK, DEV=4 kHz CHF=11 kHz(1)
–113 dBm 4.8 kbps OOK
–108 dBm 32.768 kbps 2-GFSK, DEV=50 kHz CHF=208 kHz(1)
–110 dBm 38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz(1)
–109 dBm 50 kbps 2-GFSK, DEV=25 kHz, CHF=104 kHz(1)
-107 dBm 100-kbps 2-GFSK, DEV=50 kHz, CHF=208 kHz(1)
–97 dBm 500 kbps 2-GMSK, CHF=833 kHz(1)
–97 dBm 1 Mbps 4-GFSK, DEV=400 kHz, CHF=1.66 MHz(1)
Blocking and Selectivity
1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 11-kHz channel filter		 54 dB ± 12.5 kHz (adjacent channel)
55 dB ± 25 kHz (alternate channel)
77 dB ± 2 MHz
82 dB ± 10 MHz
Blocking and Selectivity
32.768-kbps 2-GFSK, 200-kHz channel separation, 50-kHz deviation, 208-kHz channel filter		 38 dB ± 200 kHz
46 dB ± 400 kHz
66 dB ± 2 MHz
70 dB ± 10 MHz
Blocking and Selectivity
38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 104-kHz channel filter		 44 dB + 100 kHz (adjacent channel)
44 dB ± 200 kHz (alternate channel)
64 dB ± 2 MHz
72 dB ± 10 MHz
Blocking and Selectivity
50-kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 104-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode)		 41 dB ± 200 kHz (adjacent channel)
46 dB ± 400 kHz (alternate channel)
65 dB ± 2 MHz
71 dB ± 10 MHz
Blocking and Selectivity
100-kbps 2-GFSK, 50-kHz deviation,
208-kHz channel filter		 45 dB ± 400 kHz (adjacent channel)
54 dB ± 800 kHz (alternate channel)
63 dB ± 2 MHz
68 dB ± 10 MHz
Blocking and Selectivity
500-kbps GMSK, 833-kHz channel filter		 42 dB + 1 MHz (adjacent channel)
42 dB ± 2 MHz (alternate channel)
57 dB ± 10 MHz
Blocking and Selectivity
1-Mbps 4-GFSK, 400-kHz deviation,
1.6-MHz channel filter		 46 dB ± 2 MHz (adjacent channel)
52 dB ± 4 MHz (alternate channel)
59 dB ± 10 MHz
Image rejection
(Image compensation enabled) 		56 dB 1.2 kbps, DEV=4 kHz, CHF=10 kHz, image at –125 kHz
(1) DEV is short for deviation, CHF is short for Channel Filter Bandwidth

4.10.3 RX Performance in 433-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity –123 dBm 1.2 kbps 2-FSK, DEV=4 kHz
CHF=11 kHz(1)
–111 dBm 38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz(1)
Blocking and Selectivity
1.2-kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 11-kHz channel filter		 60 dB ± 12.5 kHz (adjacent channel)
61 dB ± 25 kHz (alternate channel)
82 dB ± 2 MHz
85 dB ± 10 MHz
Blocking and Selectivity
38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 104-kHz channel filter		 49 dB + 100 kHz (adjacent channel)
48 dB ± 200 kHz (alternate channel)
66 dB ± 2 MHz
74 dB ± 10 MHz

4.10.4 RX Performance in 169-MHz Band (High-Performance Mode)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity –122 dBm 1.2 kbps 2-FSK, DEV=4 kHz CHF=11 kHz(1)
Blocking and Selectivity
1.2 kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 11-kHz channel filter		 59 dB ± 12.5 kHz (adjacent channel)
64 dB ± 25 kHz (alternate channel)
84 dB ± 2 MHz
86 dB ± 10 MHz
Spurious response rejection
1.2 kbps 2-FSK, 12.5-kHz channel separation, 4-kHz deviation, 11-kHz channel filter		 68 dB Spurious at ± 40 MHz from carrier
Image rejection
(Image compensation enabled)		 68 dB 1.2 kbps, DEV=4 kHz, CHF=10 kHz, image at –125 kHz

4.10.5 RX Performance in Low-Power Mode

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Sensitivity –110 dBm 1.2 kbps 2-FSK, DEV=4 kHz
CHF=11 kHz(1)
–96 dBm 50 kbps 2-GFSK, DEV=25 kHz, CHF=119 kHz(1)
Blocking and Selectivity
50 kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 104-kHz channel filter
(Same modulation format as 802.15.4g Mandatory Mode)		 41 dB + 200 kHz (adjacent channel)
45 dB + 400 kHz (alternate channel)
62 dB ± 2 MHz
60 dB ± 10 MHz
Saturation +10 dBm

4.11 Transmit Parameters

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Max output power +14 dBm At 915- and 920-MHz
+15 dBm At 915- and 920-MHz with VDD = 3.6 V
+15 dBm At 868 MHz
+16 dBm At 868 MHz with VDD = 3.6 V
+15 dBm At 433 MHz
+16 dBm At 433 MHz with VDD = 3.6 V
+15 dBm At 169 MHz
+16 dBm At 169 MHz with VDD = 3.6 V
Min output power –12 dBm Within fine step size range
–38 dBm Within coarse step size range
Output power step size 0.4 dB Within fine step size range
Adjacent channel power –60 dBc 4-GFSK 9.6 kbps in 12.5-kHz channel, measured in 8.75-kHz bandwidth (ETSI 300 220 compliant)
Spurious emissions
(Excluding harmonics)		 Transmission at +14 dBm
Suitable for systems targeting compliance with ETSI EN 300 220, ETSI EN 54-25, FCC Part 15, FCC Part 90, ARIB STD-T108, ARIB STD-T67, ARIB RCR STD-30
Measured in 1-MHz bandwidth
30 MHz–1 GHz < –57 dBm
1–12.75 GHz < –50 dBm
Harmonics

Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design


Suitable for systems targeting compliance with ETSI EN 300-220, ETSI EN 54-25, FCC Part 15, FCC Part 90, ARIB STD-T108, ARIB STD-T67, ARIB RCR STD-30
Second Harm, 169 MHz (ETSI) –43 dBm
Third Harm, 169 MHz (ETSI) –57 dBm
Fourth Harm, 169 MHz (ETSI) –63 dBm
Second Harm, 433 MHz (ETSI) –59 dBm
Third Harm, 433 MHz (ETSI) –51 dBm
Fourth Harm, 433 MHz (ETSI) –63 dBm
Second Harm, 868 MHz (ETSI) –50 dBm
Third Harm, 868 MHz (ETSI) –44 dBm
Fourth Harm, 868 MHz (ETSI) –56 dBm
Second Harm, 915 MHz (FCC) –58 dBm
Third Harm, 915 MHz (FCC) –46 dBm
Fourth Harm, 915 MHz (FCC) –62 dBm
Second Harm, 920 MHz (ARIB) –65 dBm
Third Harm, 920 MHz (ARIB) –60 dBm
Optimum load impedance
868-, 915-, and 920-MHz bands 35 + j35 Ω
433-MHz band 55 + j25 Ω
169-MHz band 80 + j0 Ω

4.12 PLL Parameters

4.12.1 High-Performance Mode

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 868-, 915-, and 920-MHz bands
200-kHz loop bandwidth setting		 –94 dBc/Hz ± 10 kHz offset
–96 dBc/Hz ± 100 kHz offset
–123 dBc/Hz ± 1 MHz offset
–137 dBc/Hz ± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands
300-kHz loop bandwidth setting		 –100 dBc/Hz ± 10 kHz offset
–102 dBc/Hz ± 100 kHz offset
–121 dBc/Hz ± 1 MHz offset
–136 dBc/Hz ± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands
400-kHz loop bandwidth setting		 –103 dBc/Hz ± 10 kHz offset
–104 dBc/Hz ± 100 kHz offset
–119 dBc/Hz ± 1 MHz offset
–133 dBc/Hz ± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz bands
500-kHz loop bandwidth setting		 –104 dBc/Hz ± 10 kHz offset
–106 dBc/Hz ± 100 kHz offset
–116 dBc/Hz ± 1 MHz offset
–130 dBc/Hz ± 10 MHz offset
Phase noise in 433-MHz band
300-kHz loop bandwidth setting		 –106 dBc/Hz ± 10 kHz offset
–107 dBc/Hz ± 100 kHz offset
–127 dBc/Hz ± 1 MHz offset
–141 dBc/Hz ± 10 MHz offset
Phase noise in 169-MHz band
300-kHz loop bandwidth setting		 –114 dBc/Hz ± 10 kHz offset
–114 dBc/Hz ± 100 kHz offset
–132 dBc/Hz ± 1 MHz offset
–142 dBc/Hz ± 10 MHz offset

4.12.2 Low-Power Mode

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Phase noise in 868-, 915-, and 920-MHz bands
200-kHz loop bandwidth setting		 –99 dBc/Hz ± 10 kHz offset
–101 dBc/Hz ± 100 kHz offset
–121 dBc/Hz ± 1 MHz offset
–135 dBc/Hz ± 10 MHz offset

4.13 Wake-up and Timing

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

The turnaround behavior to and from RX and/or TX is highly configurable, and the time it takes will depend on how the device is set up. See the CC120X user guide (SWRU346) for more information.

PARAMETER MIN TYP MAX UNIT CONDITION
Powerdown to IDLE 0.24 ms Depends on crystal
IDLE to RX/TX 133 µs Calibration disabled
369 µs Calibration enabled
RX/TX turnaround 43 µs
RX-to-RX turnaround 369 µs With PLL calibration
0 µs Without PLL calibration
TX-to-TX turnaround 369 µs With PLL calibration
0 µs Without PLL calibration
RX/TX to IDLE time 237 µs Calibrate when leaving RX/TX enabled
0 µs Calibrate when leaving RX/TX disabled
Frequency synthesizer calibration 314 µs When using SCAL strobe
Minimum required number of preamble bytes 0.5 bytes Required for RF front-end gain settling only. Digital demodulation does not require preamble for settling.
Time from start RX until valid RSSI(1)
Including gain settling (function of channel bandwidth. Programmable for trade-off between speed and accuracy)		 4.2 ms 12.5-kHz channels
0.25 ms 120-kHz channels
(1) See the design note on RSSI and response time. It is written for the CC112X devices, but the same principles apply for the CC1200 device.

4.14 40-MHz Crystal Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Crystal frequency 38.4 40 MHz It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (CL) 10 pF
ESR 60 Ω Simulated over operating conditions
Start-up time 0.24 ms Depends on crystal

4.15 40-MHz Clock Input (TCXO)

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency 38.4   40 MHz  
TCXO with CMOS output TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage 1.4 VDD V
Low input voltage 0 0.6 V
Rise / Fall time 2 ns
Clipped sine output TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak) 0.8 1.5 V

4.16 32-kHz Clock Input

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Clock frequency 32 kHz
32-kHz clock input pin input high voltage 0.8 x VDD V
32-kHz clock input pin input low voltage 0.2 x VDD V

4.17 40-kHz RC Oscillator

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Frequency 40 kHz After calibration (frequency calibrated against the 40-MHz crystal or TCXO)
Frequency accuracy after calibration ±0.1 % Relative to frequency reference (that is, 40-MHz crystal or TCXO)
Initial calibration time 1.32 ms

4.18 I/O and Reset

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Logic input high voltage 0.8 x VDD V
Logic input low voltage 0.2 x VDD V
Logic output high voltage 0.8 x VDD V At 4-mA output load or less
Logic output low voltage 0.2 x VDD V
Power-on reset threshold 1.3 V Voltage on DVDD pin

4.19 Temperature Sensor

TA = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER MIN TYP MAX UNIT CONDITION
Temperature sensor range –40 85 °C
Temperature coefficient 2.66 mV / °C Change in sensor output voltage versus change in temperature
Typical output voltage 794 mV Typical sensor output voltage at TA = 25°C, VDD = 3.0 V
VDD coefficient 1.17 mV / V Change in sensor output voltage versus change in VDD

The CC1200 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (see Section 4.19, Temperature Sensor). For more information, see the temperature sensor design note (SWRA415).

4.20 Typical Characteristics

TA = 25°C, VDD = 3.0 V, fc = 869.5 MHz if nothing else stated

tc01_swrs123.gif
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth
Figure 4-1 Sensitivity vs Temperature (434 MHz)
tc03_swrs123.gif
50 kbps GFSK, 25-kHz Deviation, 104-kHz Channel Filter Bandwidth
Figure 4-3 RSSI vs Input Level
tc05_swrs123.gif
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth; Image Frequency at –0.21-MHz Offset
Figure 4-5 Selectivity vs Offset Frequency (12.5-kHz Channels)
tc07_swrs123.gif
Maximum Output Power Setting (0x7F)
Figure 4-7 Output Power vs Supply Voltage
tc09_swrs123.gif
Figure 4-9 Output Power at 868 MHz
PA Power Setting
tc11_swrs123.gif
1 Mbps 4-GFSK, 400-kHz Deviation, 500-kHz Loop Bandwidth
Figure 4-11 Eye Diagram
tc13_swrs123.gif
50 kbps GFSK, 25-kHz Deviation, 200-kHz Loop Bandwidth
Figure 4-13 Eye Diagram
tc15_swrs123.gif
200-kHz Loop Bandwidth
Figure 4-15 Phase Noise 869.5 MHz (10-kHz to 100-MHz Offset)
tc17_swrs123.gif
400-kHz Loop Bandwidth
Figure 4-17 Phase Noise 869.5 MHz (10-kHz to 100-MHz Offset)
tc02_swrs123.gif
1.2 kbps, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth
Figure 4-2 Sensitivity vs Temperature (434 MHz)
tc04_swrs123.gif
50 kbps, 25-kHz Deviation, 104-kHz Channel Filter Bandwidth; Image Frequency at –0.28-MHz Offset (Compensation Enabled)
Figure 4-4 Selectivity vs Offset Frequency (100-kHz Channels)
tc06_swrs123.gif
1.2 kbps FSK, 4-kHz Deviation, 11-kHz Channel Filter Bandwidth
Figure 4-6 RX Current vs Input Level
tc08_swrs123.gif
Maximum Power Setting (0x7F)
Figure 4-8 Output Power vs Temperature
tc10_swrs123.gif
Figure 4-10 TX Current at 868 MHz
vs PA Power Setting
tc12_swrs123.gif
1 Mbps 4-GFSK, 400-kHz Deviation, 300-kHz Loop Bandwidth
Figure 4-12 Eye Diagram
tc14_swrs123.gif
Figure 4-14 GPIO Output High and Low Voltage
vs Current Being Sourced and Sinked
tc16_swrs123.gif
300-kHz Loop Bandwidth
Figure 4-16 Phase Noise 869.5 MHz (10-kHz to 100-MHz Offset)
tc18_swrs123.gif
500-kHz Loop Bandwidth
Figure 4-18 Phase Noise 869.5 MHz (10-kHz to 100-MHz Offset)