SWRS181D September   2015  – July 2018 CC1310

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram – RSM Package
    2. 4.2 Signal Descriptions – RSM Package
    3. 4.3 Pin Diagram – RHB Package
    4. 4.4 Signal Descriptions – RHB Package
    5. 4.5 Pin Diagram – RGZ Package
    6. 4.6 Signal Descriptions – RGZ Package
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
    5. 5.5  RF Characteristics
    6. 5.6  Receive (RX) Parameters, 861 MHz to 1054 MHz
    7. 5.7  Receive (RX) Parameters, 431 MHz to 527 MHz
    8. 5.8  Transmit (TX) Parameters, 861 MHz to 1054 MHz
    9. 5.9  Transmit (TX) Parameters, 431 MHz to 527 MHz
    10. 5.10 PLL Parameters
    11. 5.11 ADC Characteristics
    12. 5.12 Temperature Sensor
    13. 5.13 Battery Monitor
    14. 5.14 Continuous Time Comparator
    15. 5.15 Low-Power Clocked Comparator
    16. 5.16 Programmable Current Source
    17. 5.17 DC Characteristics
    18. 5.18 Thermal Characteristics
    19. 5.19 Timing and Switching Characteristics
      1. 5.19.1 Reset Timing
        1. Table 5-1 Reset Timing
      2. 5.19.2 Wakeup Timing
        1. Table 5-2 Wakeup Timing
      3. 5.19.3 Clock Specifications
        1. Table 5-3 24-MHz Crystal Oscillator (XOSC_HF)
        2. Table 5-4 32.768-kHz Crystal Oscillator (XOSC_LF)
        3. Table 5-5 48-MHz RC Oscillator (RCOSC_HF)
        4. Table 5-6 32-kHz RC Oscillator (RCOSC_LF)
      4. 5.19.4 Flash Memory Characteristics
        1. Table 5-7 Flash Memory Characteristics
      5. 5.19.5 Synchronous Serial Interface (SSI) Characteristics
        1. Table 5-8 Synchronous Serial Interface (SSI) Characteristics
    20. 5.20 Typical Characteristics
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Main CPU
    3. 6.3  RF Core
    4. 6.4  Sensor Controller
    5. 6.5  Memory
    6. 6.6  Debug
    7. 6.7  Power Management
    8. 6.8  Clock Systems
    9. 6.9  General Peripherals and Modules
    10. 6.10 Voltage Supply Domains
    11. 6.11 System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 TI Design or Reference Design
  8. 8Device and Documentation Support
    1. 8.1  Device Nomenclature
    2. 8.2  Tools and Software
    3. 8.3  Documentation Support
    4. 8.4  Texas Instruments Low-Power RF Website
    5. 8.5  Additional Information
    6. 8.6  Community Resources
    7. 8.7  Trademarks
    8. 8.8  Electrostatic Discharge Caution
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Ambient temperature –40 85 °C
Operating supply voltage (VDDS) For operation in battery-powered and
3.3-V systems (internal DC/DC can be used to minimize power consumption)		 1.8 3.8 V
Operating supply voltages (VDDS2 and VDDS3) VDDS < 2.7 V 1.8 3.8 V
Operating supply voltages (VDDS2 and VDDS3) VDDS ≥ 2.7 V 1.9 3.8 V
Rising supply voltage slew rate 0 100 mV/µs
Falling supply voltage slew rate 0 20 mV/µs
Falling supply voltage slew rate, with low-power flash setting(1) 3 mV/µs
Positive temperature gradient in standby(2) No limitation for negative temperature gradient, or outside standby mode 5 °C/s
(1) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor must be used to ensure compliance with this slew rate.
(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see ).