SWRS181D
September 2015 – July 2018
CC1310
PRODUCTION DATA.
1
Device Overview
1.1
Features
1.2
Applications
1.3
Description
1.4
Functional Block Diagram
2
Revision History
3
Device Comparison
3.1
Related Products
4
Terminal Configuration and Functions
4.1
Pin Diagram – RSM Package
4.2
Signal Descriptions – RSM Package
4.3
Pin Diagram – RHB Package
4.4
Signal Descriptions – RHB Package
4.5
Pin Diagram – RGZ Package
4.6
Signal Descriptions – RGZ Package
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Power Consumption Summary
5.5
RF Characteristics
5.6
Receive (RX) Parameters, 861 MHz to 1054 MHz
5.7
Receive (RX) Parameters, 431 MHz to 527 MHz
5.8
Transmit (TX) Parameters, 861 MHz to 1054 MHz
5.9
Transmit (TX) Parameters, 431 MHz to 527 MHz
5.10
PLL Parameters
5.11
ADC Characteristics
5.12
Temperature Sensor
5.13
Battery Monitor
5.14
Continuous Time Comparator
5.15
Low-Power Clocked Comparator
5.16
Programmable Current Source
5.17
DC Characteristics
5.18
Thermal Characteristics
5.19
Timing and Switching Characteristics
5.19.1
Reset Timing
Table 5-1
Reset Timing
5.19.2
Wakeup Timing
Table 5-2
Wakeup Timing
5.19.3
Clock Specifications
Table 5-3
24-MHz Crystal Oscillator (XOSC_HF)
Table 5-4
32.768-kHz Crystal Oscillator (XOSC_LF)
Table 5-5
48-MHz RC Oscillator (RCOSC_HF)
Table 5-6
32-kHz RC Oscillator (RCOSC_LF)
5.19.4
Flash Memory Characteristics
Table 5-7
Flash Memory Characteristics
5.19.5
Synchronous Serial Interface (SSI) Characteristics
Table 5-8
Synchronous Serial Interface (SSI) Characteristics
5.20
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Main CPU
6.3
RF Core
6.4
Sensor Controller
6.5
Memory
6.6
Debug
6.7
Power Management
6.8
Clock Systems
6.9
General Peripherals and Modules
6.10
Voltage Supply Domains
6.11
System Architecture
7
Application, Implementation, and Layout
7.1
Application Information
7.2
TI Design or Reference Design
8
Device and Documentation Support
8.1
Device Nomenclature
8.2
Tools and Software
8.3
Documentation Support
8.4
Texas Instruments Low-Power RF Website
8.5
Additional Information
8.6
Community Resources
8.7
Trademarks
8.8
Electrostatic Discharge Caution
8.9
Export Control Notice
8.10
Glossary
9
Mechanical, Packaging, and Orderable Information
9.1
Packaging Information
Package Options
Mechanical Data (Package|Pins)
RGZ|48
MPQF123F
RSM|32
MPQF195B
RHB|32
MPQF130D
Thermal pad, mechanical data (Package|Pins)
RGZ|48
QFND031W
RSM|32
QFND112H
RHB|32
QFND029X
Orderable Information
swrs181d_oa
swrs181d_pm
Table 5-2
Wakeup Timing
Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with T
c
= 25°C, V
DDS
= 3.0 V, unless otherwise noted. The times listed here do not include RTOS overhead.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MCU, Idle → Active
14
µs
MCU, Standby → Active
174
µs
MCU, Shutdown → Active
1097
µs