SWRS210H January   2018  – November 2020 CC1312R

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Functional Block Diagram
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Terminal Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 143 MHz to 176 MHz - Receive (RX)
    18. 8.18 143 MHz to 176 MHz  - Transmit (TX) 
    19. 8.19 143 MHz to 176 MHz - PLL Phase Noise
    20. 8.20 Timing and Switching Characteristics
      1. 8.20.1 Reset Timing
      2. 8.20.2 Wakeup Timing
      3. 8.20.3 Clock Specifications
        1. 8.20.3.1 48 MHz Clock Input (TCXO)
        2. 8.20.3.2 48 MHz Crystal Oscillator (XOSC_HF)
        3. 8.20.3.3 48 MHz RC Oscillator (RCOSC_HF)
        4. 8.20.3.4 2 MHz RC Oscillator (RCOSC_MF)
        5. 8.20.3.5 32.768 kHz Crystal Oscillator (XOSC_LF)
        6. 8.20.3.6 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.20.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.20.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       43
      5. 8.20.5 UART
        1. 8.20.5.1 UART Characteristics
    21. 8.21 Peripheral Characteristics
      1. 8.21.1 ADC
        1. 8.21.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.21.2 DAC
        1. 8.21.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.21.3 Temperature and Battery Monitor
        1. 8.21.3.1 Temperature Sensor
        2. 8.21.3.2 Battery Monitor
      4. 8.21.4 Comparators
        1. 8.21.4.1 Low-Power Clocked Comparator
        2. 8.21.4.2 Continuous Time Comparator
      5. 8.21.5 Current Source
        1. 8.21.5.1 Programmable Current Source
      6. 8.21.6 GPIO
        1. 8.21.6.1 GPIO DC Characteristics
    22. 8.22 Typical Characteristics
      1. 8.22.1 MCU Current
      2. 8.22.2 RX Current
      3. 8.22.3 TX Current
      4. 8.22.4 RX Performance
      5. 8.22.5 TX Performance
      6. 8.22.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Sensor Controller
    6. 9.6  Cryptography
    7. 9.7  Timers
    8. 9.8  Serial Peripherals and I/O
    9. 9.9  Battery and Temperature Monitor
    10. 9.10 µDMA
    11. 9.11 Debug
    12. 9.12 Power Management
    13. 9.13 Clock Systems
    14. 9.14 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
    2. 10.2 Junction Temperature Calculation
  11. 11Device and Documentation Support
    1. 11.1 Tools and Software
      1. 11.1.1 SimpleLink™ Microcontroller Platform
    2. 11.2 Documentation Support
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGZ|48
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.20.3.2 48 MHz Crystal Oscillator (XOSC_HF)

Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER MIN TYP MAX UNIT
Crystal frequency 48 MHz
ESR Equivalent series resistance
6 pF < CL ≤ 9 pF		 20 60 Ω
ESR Equivalent series resistance
5 pF < CL ≤  6 pF		 80 Ω
LM Motional inductance, relates to the load capacitance that is used for the crystal (CL in Farads)(5) < 3 × 10–25 / CL 2 H
CL Crystal load capacitance(4) 5 7(3) 9 pF
Start-up time(2) 200 µs
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used.
(3) On-chip default connected capacitance including reference design parasitic capacitance. Connected internal capacitance is changed through software in the Customer Configuration section (CCFG).
(4) Adjustable load capacitance is integrated into the device. External load capacitors are required for systems targeting compliance with certain regulations. See the device errata for further details.
(5) The crystal manufacturer's specification must satisfy this requirement for proper operation.