SWRS176 Data sheet

SWRS176B February 2015 – July 2016 CC2640

PRODUCTION DATA.

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)

RSM|32
RGZ|48
RHB|32

Thermal pad, mechanical data (Package|Pins)

RGZ|48
- QFND031W
RSM|32
- QFND112H
RHB|32
- QFND029X

Orderable Information

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Supply voltage (VDDS, VDDS2, and VDDS3)	VDDR supplied by internal DC-DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB.	–0.3	4.1	V
Supply voltage (VDDS⁽³⁾ and VDDR)	External regulator mode (VDDS and VDDR pins connected on PCB)	–0.3	2.25	V
Voltage on any digital pin⁽⁴⁾⁽⁵⁾		–0.3	VDDSx + 0.3, max 4.1	V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P		–0.3	VDDR + 0.3, max 2.25	V
Voltage on ADC input (V_in)	Voltage scaling enabled	–0.3	VDDS	V
	Voltage scaling disabled, internal reference	–0.3	1.49
	Voltage scaling disabled, VDDS as reference	–0.3	VDDS / 2.9
Input RF level			5	dBm
T_stg	Storage temperature	–40	150	°C

(1) All voltage values are with respect to ground, unless otherwise noted.

(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(3) In external regulator mode, VDDS2 and VDDS3 must be at the same potential as VDDS.

(4) Including analog-capable DIO.

(5) Each pin is referenced to a specific VDDSx (VDDS, VDDS2 or VDDS3). For a pin-to-VDDS mapping table, see Table 6-3.

5.2 ESD Ratings

				VALUE	UNIT
V_ESD	Electrostatic discharge (ESD) performance	Human body model (HBM), per ANSI/ESDA/JEDEC JS001⁽¹⁾	All pins	±2500	V
		Charged device model (CDM), per JESD22-C101⁽²⁾	RF pins	±750
		Charged device model (CDM), per JESD22-C101⁽²⁾	Non-RF pins	±750

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Ambient temperature range		–40	85	°C
Operating supply voltage (VDDS and VDDR), external regulator mode	For operation in 1.8-V systems (VDDS and VDDR pins connected on PCB, internal DC-DC cannot be used)	1.7	1.95	V
Operating supply voltage VDDS	For operation in battery-powered and 3.3-V systems (internal DC-DC can be used to minimize power consumption)	1.8	3.8	V
Operating supply voltages VDDS2 and VDDS3		0.7 × VDDS, min 1.8	3.8	V

5.4 Power Consumption Summary

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V with internal DC-DC converter, unless otherwise noted.

PARAMETER		TEST CONDITIONS	TYP	UNIT
I_core	Core current consumption	Reset. RESET_N pin asserted or VDDS below Power-on-Reset threshold	100	nA
		Shutdown. No clocks running, no retention	150	nA
		Standby. With RTC, CPU, RAM and (partial) register retention. RCOSC_LF	1	µA
		Standby. With RTC, CPU, RAM and (partial) register retention. XOSC_LF	1.2
		Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF	2.5
		Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF	2.7
		Idle. Supply Systems and RAM powered.	550
		Active. Core running CoreMark	1.45 mA + 31 µA/MHz
		Radio RX ⁽¹⁾	5.9	mA
		Radio RX⁽²⁾	6.1
		Radio TX, 0-dBm output power⁽¹⁾	6.1
		Radio TX, 5-dBm output power⁽²⁾	9.1
Peripheral Current Consumption (Adds to core current I_core for each peripheral unit activated)⁽³⁾
I_peri	Peripheral power domain	Delta current with domain enabled	20	µA
	Serial power domain	Delta current with domain enabled	13	µA
	RF Core	Delta current with power domain enabled, clock enabled, RF core idle	237	µA
	µDMA	Delta current with clock enabled, module idle	130	µA
	Timers	Delta current with clock enabled, module idle	113	µA
	I²C	Delta current with clock enabled, module idle	12	µA
	I2S	Delta current with clock enabled, module idle	36	µA
	SSI	Delta current with clock enabled, module idle	93	µA
	UART	Delta current with clock enabled, module idle	164	µA

(1) Single-ended RF mode is optimized for size and power consumption. Measured on CC2650EM-4XS.

(2) Differential RF mode is optimized for RF performance. Measured on CC2650EM-5XD.

(3) I_peri is not supported in Standby or Shutdown.

5.5 General Characteristics

Measured on the TI CC2650EM-5XD reference design with T_c= 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	UNIT
FLASH MEMORY
Supported flash erase cycles before failure		100		k Cycles
Flash page/sector erase current	Average delta current		12.6	mA
Flash page/sector size			4	KB
Flash write current	Average delta current, 4 bytes at a time		8.15	mA
Flash page/sector erase time⁽¹⁾			8	ms
Flash write time⁽¹⁾	4 bytes at a time		8	µs

(1) This number is dependent on Flash aging and will increase over time and erase cycles.

5.6 1-Mbps GFSK (Bluetooth low energy Technology) – RX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Receiver sensitivity	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		–97		dBm
Receiver sensitivity	Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10^–3		–96		dBm
Receiver saturation	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		4		dBm
Receiver saturation	Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10^–3		0		dBm
Frequency error tolerance	Difference between the incoming carrier frequency and the internally generated carrier frequency	–350		350	kHz
Data rate error tolerance	Difference between incoming data rate and the internally generated data rate	–750		750	ppm
Co-channel rejection ⁽²⁾	Wanted signal at –67 dBm, modulated interferer in channel, BER = 10^–3		–6		dB
Selectivity, ±1 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10^–3		7 / 3⁽¹⁾		dB
Selectivity, ±2 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±2 MHz, BER = 10^–3		34 / 25⁽¹⁾		dB
Selectivity, ±3 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10^–3		38 / 26⁽¹⁾		dB
Selectivity, ±4 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10^–3		42 / 29⁽¹⁾		dB
Selectivity, ±5 MHz or more⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ≥ ±5 MHz, BER = 10^–3		32		dB
Selectivity, Image frequency⁽²⁾	Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10^–3		25		dB
Selectivity, Image frequency ±1 MHz⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10^–3		3 / 26⁽¹⁾		dB
Out-of-band blocking ⁽³⁾	30 MHz to 2000 MHz		–20		dBm
Out-of-band blocking	2003 MHz to 2399 MHz		–5		dBm
Out-of-band blocking	2484 MHz to 2997 MHz		–8		dBm
Out-of-band blocking	3000 MHz to 12.75 GHz		–8		dBm
Intermodulation	Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level		–34		dBm
Spurious emissions, 30 to 1000 MHz	Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66		–71		dBm
Spurious emissions, 1 to 12.75 GHz	Conducted measurement in a 50 Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66		–62		dBm
RSSI dynamic range			70		dB
RSSI accuracy			±4		dB

(1) X / Y, where X is +N MHz and Y is –N MHz.

(2) Numbers given as I/C dB.

(3) Excluding one exception at F_wanted / 2, per Bluetooth Specification.

5.7 1-Mbps GFSK (Bluetooth low energy Technology) – TX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	TYP	UNIT
Output power, highest setting	Differential mode, delivered to a single-ended 50-Ω load through a balun	5	dBm
Output power, highest setting	Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load	2	dBm
Output power, lowest setting	Delivered to a single-ended 50-Ω load through a balun	–21	dBm
Spurious emission conducted measurement⁽¹⁾	f < 1 GHz, outside restricted bands	–43	dBm
	f < 1 GHz, restricted bands ETSI	–65	dBm
	f < 1 GHz, restricted bands FCC	–76	dBm
	f > 1 GHz, including harmonics	–46	dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

5.8 2-Mbps GFSK (Bluetooth 5) – RX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Receiver sensitivity	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		–92		dBm
Receiver saturation	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		4		dBm
Frequency error tolerance	Difference between the incoming carrier frequency and the internally generated carrier frequency	–300		500	kHz
Data rate error tolerance	Difference between incoming data rate and the internally generated data rate	–1000		1000	ppm
Co-channel rejection ⁽²⁾	Wanted signal at –67 dBm, modulated interferer in channel, BER = 10^–3		–7		dB
Selectivity, ±2 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at -2 MHz BER = 10^–3		8 / 4⁽¹⁾		dB
Selectivity, ±4 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10^–3		31 / 26⁽¹⁾		dB
Selectivity, ±6 MHz ⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ±6 MHz, BER = 10^–3		37 / 38⁽¹⁾		dB
Alternate channel rejection, ±7 MHz⁽²⁾	Wanted signal at –67 dBm, modulated interferer at ≥ ±7 MHz, BER = 10^–3		37 / 36⁽¹⁾		dB
Selectivity, Image frequency⁽²⁾	Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10^–3		4		dB
Selectivity, Image frequency ±2 MHz⁽²⁾	Note that Image frequency + 2 MHz is the Co-channel. Wanted signal at –67 dBm, modulated interferer at ±2 MHz from image frequency, BER = 10^–3		-7 / 26⁽¹⁾		dB
Out-of-band blocking ⁽³⁾	30 MHz to 2000 MHz		–33		dBm
Out-of-band blocking	2003 MHz to 2399 MHz		–15		dBm
Out-of-band blocking	2484 MHz to 2997 MHz		–12		dBm
Out-of-band blocking	3000 MHz to 12.75 GHz		–10		dBm
Intermodulation	Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level		–45		dBm

(1) X / Y, where X is +N MHz and Y is –N MHz.

(2) Numbers given as I/C dB.

(3) Excluding one exception at F_wanted / 2, per Bluetooth Specification.

5.9 2-Mbps GFSK (Bluetooth 5) – TX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	TYP	UNIT
Output power, highest setting	Differential mode, delivered to a single-ended 50-Ω load through a balun	5	dBm
Output power, highest setting	Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load	2	dBm
Output power, lowest setting	Delivered to a single-ended 50-Ω load through a balun	–21	dBm
Spurious emission conducted measurement⁽¹⁾	f < 1 GHz, outside restricted bands	–43	dBm
	f < 1 GHz, restricted bands ETSI	–65	dBm
	f < 1 GHz, restricted bands FCC	–76	dBm
	f > 1 GHz, including harmonics	–46	dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

5.10 5-Mbps (Proprietary) – RX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Receiver sensitivity	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		–81		dBm
Receiver saturation	Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10^–3		-11		dBm
Frequency error tolerance	Difference between the incoming carrier frequency and the internally generated carrier frequency	–300		300	kHz
Data rate error tolerance	Difference between incoming data rate and the internally generated data rate	–200		200	ppm
Co-channel rejection ⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer in channel, BER = 10^–3		–19		dB
Selectivity, ±4 MHz ⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±4 MHz BER = 10^–3		9 / 9⁽¹⁾		dB
Selectivity, ±5 MHz ⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±5 MHz, BER = 10^–3		19 / 19⁽¹⁾		dB
Selectivity, ±8 MHz ⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±8 MHz, BER = 10^–3		28 / 28⁽¹⁾		dB
Selectivity, ±10 MHz⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±10 MHz, BER = 10^–3		33 / 33⁽¹⁾		dB
Selectivity, ±12 MHz⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±12 MHz, BER = 10^–3		37/ 37⁽¹⁾		dB
Selectivity, ±15 MHz⁽²⁾	Wanted signal 11 dB above sensitivity level, modulated interferer at ±15 MHz, BER = 10^–3		43/ 43⁽¹⁾		dB
Blocker rejection ±10 MHz and above ⁽²⁾	Wanted signal 3dB above sensitivity limit , CW interferer at ±10 MHz and above, BER = 10^–3		40		dB

(1) X / Y, where X is +N MHz and Y is –N MHz.

(2) Numbers given as I/C dB.

5.11 5-Mbps (Proprietary) – TX

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, f_RF = 2440 MHz, unless otherwise noted.

PARAMETER	TEST CONDITIONS	TYP	UNIT
Output power, highest setting	Differential mode, delivered to a single-ended 50-Ω load through a balun	5	dBm
Output power, highest setting	Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load	2	dBm
Output power, lowest setting	Delivered to a single-ended 50-Ω load through a balun	–21	dBm
Occupied bandwidth	95% BW	2.4	MHz
Occupied bandwidth	99% BW	3.7	MHz
Spurious emission conducted measurement⁽¹⁾	f < 1 GHz, outside restricted bands	–43	dBm
	f < 1 GHz, restricted bands ETSI	–65	dBm
	f < 1 GHz, restricted bands FCC	–76	dBm
	f > 1 GHz, including harmonics	–46	dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

5.12 24-MHz Crystal Oscillator (XOSC_HF)

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.⁽¹⁾

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
ESR Equivalent series resistance⁽²⁾	6 pF < C_L ≤ 9 pF		20	60	Ω
ESR Equivalent series resistance⁽²⁾	5 pF < C_L ≤ 6 pF			80	Ω
L_M Motional inductance⁽²⁾	Relates to load capacitance (C_L in Farads)		< 1.6 × 10^–24 / C_L²		H
C_L Crystal load capacitance⁽²⁾		5		9	pF
Crystal frequency⁽²⁾⁽³⁾			24		MHz
Crystal frequency tolerance⁽²⁾⁽⁴⁾		–40		40	ppm
Start-up time⁽³⁾⁽⁵⁾			150		µs

(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.

(2) The crystal manufacturer's specification must satisfy this requirement

(3) Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V

(4) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per Bluetooth specification.

(5) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.

5.13 32.768-kHz Crystal Oscillator (XOSC_LF)

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	MIN	TYP	MAX	UNIT
Crystal frequency⁽¹⁾		32.768		kHz
Crystal frequency tolerance, Bluetooth low-energy applications⁽¹⁾⁽²⁾	–500		500	ppm
ESR Equivalent series resistance⁽¹⁾		30	100	kΩ
C_L Crystal load capacitance⁽¹⁾	6		12	pF

(1) The crystal manufacturer's specification must satisfy this requirement

(2) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per Bluetooth specification.

5.14 48-MHz RC Oscillator (RCOSC_HF)

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TYP	UNIT
Frequency	48	MHz
Uncalibrated frequency accuracy	±1%
Calibrated frequency accuracy⁽¹⁾	±0.25%
Start-up time	5	µs

(1) Accuracy relative to the calibration source (XOSC_HF).

5.15 32-kHz RC Oscillator (RCOSC_LF)

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Calibrated frequency⁽¹⁾			32.8		kHz
Temperature coefficient			50		ppm/°C

(1) The frequency accuracy of the Real Time Clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC Oscillator. The RTC can be calibrated to an accuracy within ±500 ppm of 32.768 kHz by measuring the frequency error of RCOSC_LF relative to XOSC_HF and compensating the RTC tick speed. The procedure is explained in Running Bluetooth^® Low Energy on CC2640 Without 32 kHz Crystal.

5.16 ADC Characteristics

T_c = 25°C, V_DDS = 3.0 V and voltage scaling enabled, unless otherwise noted.⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
	Input voltage range		0		VDDS	V
	Resolution			12		Bits
	Sample rate				200	ksps
	Offset	Internal 4.3-V equivalent reference⁽²⁾		2		LSB
	Gain error	Internal 4.3-V equivalent reference⁽²⁾		2.4		LSB
DNL⁽⁴⁾	Differential nonlinearity			>–1		LSB
INL⁽⁵⁾	Integral nonlinearity			±3		LSB
ENOB	Effective number of bits	Internal 4.3-V equivalent reference⁽²⁾, 200 ksps, 9.6-kHz input tone		9.8		Bits
		VDDS as reference, 200 ksps, 9.6-kHz input tone		10
		Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone		11.1
THD	Total harmonic distortion	Internal 4.3-V equivalent reference⁽²⁾, 200 ksps, 9.6-kHz input tone		–65		dB
		VDDS as reference, 200 ksps, 9.6-kHz input tone		–69
		Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone		–71
SINAD, SNDR	Signal-to-noise and Distortion ratio	Internal 4.3-V equivalent reference⁽²⁾, 200 ksps, 9.6-kHz input tone		60		dB
		VDDS as reference, 200 ksps, 9.6-kHz input tone		63
		Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone		69
SFDR	Spurious-free dynamic range	Internal 4.3-V equivalent reference⁽²⁾, 200 ksps, 9.6-kHz input tone		67		dB
		VDDS as reference, 200 ksps, 9.6-kHz input tone		72
		Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone		73
	Conversion time	Serial conversion, time-to-output, 24-MHz clock		50		clock-cycles
	Current consumption	Internal 4.3-V equivalent reference⁽²⁾		0.66		mA
	Current consumption	VDDS as reference		0.75		mA
	Reference voltage	Equivalent fixed internal reference (input voltage scaling enabled). For best accuracy, the ADC conversion should be initiated through the TIRTOS API in order to include the gain/offset compensation factors stored in FCFG1.		4.3⁽²⁾⁽³⁾		V
	Reference voltage	Fixed internal reference (input voltage scaling disabled). For best accuracy, the ADC conversion should be initiated through the TIRTOS API in order to include the gain/offset compensation factors stored in FCFG1. This value is derived from the scaled value (4.3V) as follows: Vref=4.3V*1408/4095		1.48		V
	Reference voltage	VDDS as reference (Also known as RELATIVE) (input voltage scaling enabled)		VDDS		V
	Reference voltage	VDDS as reference (Also known as RELATIVE) (input voltage scaling disabled)		VDDS / 2.82⁽³⁾		V
	Input Impedance	200 ksps, voltage scaling enabled. Capacitive input, Input impedance depends on sampling frequency and sampling time		>1		MΩ

(1) Using IEEE Std 1241™-2010 for terminology and test methods.

(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.

(3) Applied voltage must be within absolute maximum ratings (Section 5.1) at all times.

(4) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see Figure 5-22).

(5) For a typical example, see Figure 5-23.

5.17 Temperature Sensor

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	MIN	TYP	MAX	UNIT
Resolution		4		°C
Range	–40		85	°C
Accuracy		±5		°C
Supply voltage coefficient⁽¹⁾		3.2		°C/V

(1) Automatically compensated when using supplied driver libraries.

5.18 Battery Monitor

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	MIN	TYP	MAX	UNIT
Resolution		50		mV
Range	1.8		3.8	V
Accuracy		13		mV

5.19 Continuous Time Comparator

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Input voltage range		0		VDDS	V
External reference voltage		0		VDDS	V
Internal reference voltage	DCOUPL as reference		1.27		V
Offset			3		mV
Hysteresis			<2		mV
Decision time	Step from –10 mV to 10 mV		0.72		µs
Current consumption when enabled⁽¹⁾			8.6		µA

(1) Additionally, the bias module must be enabled when running in standby mode.

5.20 Low-Power Clocked Comparator

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Input voltage range		0		VDDS	V
Clock frequency			32		kHz
Internal reference voltage, VDDS / 2			1.49 – 1.51		V
Internal reference voltage, VDDS / 3			1.01 – 1.03		V
Internal reference voltage, VDDS / 4			0.78 – 0.79		V
Internal reference voltage, DCOUPL / 1			1.25 – 1.28		V
Internal reference voltage, DCOUPL / 2			0.63 – 0.65		V
Internal reference voltage, DCOUPL / 3			0.42 – 0.44		V
Internal reference voltage, DCOUPL / 4			0.33 – 0.34		V
Offset			<2		mV
Hysteresis			<5		mV
Decision time	Step from –50 mV to 50 mV		<1		clock-cycle
Current consumption when enabled			362		nA

5.21 Programmable Current Source

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	TYP	UNIT
Current source programmable output range		0.25 – 20	µA
Resolution		0.25	µA
Current consumption⁽¹⁾	Including current source at maximum programmable output	23	µA

(1) Additionally, the bias module must be enabled when running in standby mode.

5.22 Synchronous Serial Interface (SSI)

T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
S1⁽¹⁾ t_{clk_per}(SSIClk period)	Device operating as SLAVE	12		65024	system clocks
S2 ⁽¹⁾ t_{clk_high}(SSIClk high time)	Device operating as SLAVE		0.5		t_{clk_per}
S3⁽¹⁾ t_{clk_low}(SSIClk low time)	Device operating as SLAVE		0.5		t_{clk_per}
S1 (TX only)⁽¹⁾ t_{clk_per}(SSIClk period)	One-way communication to SLAVE - Device operating as MASTER	4		65024	system clocks
S1 (TX and RX)⁽¹⁾ t_{clk_per}(SSIClk period)	Normal duplex operation - Device operating as MASTER	8		65024	system clocks
S2 ⁽¹⁾ t_{clk_high}(SSIClk high time)	Device operating as MASTER		0.5		t_{clk_per}
S3 ⁽¹⁾ t_{clk_low}(SSIClk low time)	Device operating as MASTER		0.5		t_{clk_per}

(1) Refer to SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3.

Figure 5-1 SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement

Figure 5-2 SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer

Figure 5-3 SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

5.23 DC Characteristics

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
T_A = 25°C, V_DDS = 1.8 V
GPIO VOH at 8-mA load	IOCURR = 2, high-drive GPIOs only	1.32	1.54		V
GPIO VOL at 8-mA load	IOCURR = 2, high-drive GPIOs only		0.26	0.32	V
GPIO VOH at 4-mA load	IOCURR = 1	1.32	1.58		V
GPIO VOL at 4-mA load	IOCURR = 1		0.21	0.32	V
GPIO pullup current	Input mode, pullup enabled, Vpad = 0 V		71.7		µA
GPIO pulldown current	Input mode, pulldown enabled, Vpad = VDDS		21.1		µA
GPIO high/low input transition, no hysteresis	IH = 0, transition between reading 0 and reading 1		0.88		V
GPIO low-to-high input transition, with hysteresis	IH = 1, transition voltage for input read as 0 → 1		1.07		V
GPIO high-to-low input transition, with hysteresis	IH = 1, transition voltage for input read as 1 → 0		0.74		V
GPIO input hysteresis	IH = 1, difference between 0 → 1 and 1 → 0 points		0.33		V
T_A = 25°C, V_DDS = 3.0 V
GPIO VOH at 8-mA load	IOCURR = 2, high-drive GPIOs only		2.68		V
GPIO VOL at 8-mA load	IOCURR = 2, high-drive GPIOs only		0.33		V
GPIO VOH at 4-mA load	IOCURR = 1		2.72		V
GPIO VOL at 4-mA load	IOCURR = 1		0.28		V
T_A = 25°C, V_DDS = 3.8 V
GPIO pullup current	Input mode, pullup enabled, Vpad = 0 V		277		µA
GPIO pulldown current	Input mode, pulldown enabled, Vpad = VDDS		113		µA
GPIO high/low input transition, no hysteresis	IH = 0, transition between reading 0 and reading 1		1.67		V
GPIO low-to-high input transition, with hysteresis	IH = 1, transition voltage for input read as 0 → 1		1.94		V
GPIO high-to-low input transition, with hysteresis	IH = 1, transition voltage for input read as 1 → 0		1.54		V
GPIO input hysteresis	IH = 1, difference between 0 → 1 and 1 → 0 points		0.4		V
T_A = 25°C
VIH	Lowest GPIO input voltage reliably interpreted as a «High»			0.8	VDDS⁽¹⁾
VIL	Highest GPIO input voltage reliably interpreted as a «Low»	0.2			VDDS⁽¹⁾

(1) Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.3 for more details.

5.24 Thermal Resistance Characteristics

NAME	DESCRIPTION	RSM (°C/W)⁽¹⁾⁽²⁾	RHB (°C/W)⁽¹⁾⁽²⁾	RGZ (°C/W)⁽¹⁾⁽²⁾
Rθ_JA	Junction-to-ambient thermal resistance	36.9	32.8	29.6
Rθ_JC(top)	Junction-to-case (top) thermal resistance	30.3	24.0	15.7
Rθ_JB	Junction-to-board thermal resistance	7.6	6.8	6.2
Psi_JT	Junction-to-top characterization parameter	0.4	0.3	0.3
Psi_JB	Junction-to-board characterization parameter	7.4	6.8	6.2
Rθ_JC(bot)	Junction-to-case (bottom) thermal resistance	2.1	1.9	1.9

(1) °C/W = degrees Celsius per watt.

(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [Rθ_JC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:

JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements.

Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.

5.25 Timing Requirements

		MIN	MAX	UNIT
Rising supply-voltage slew rate		0	100	mV/µs
Falling supply-voltage slew rate		0	20	mV/µs
Falling supply-voltage slew rate, with low-power flash settings⁽¹⁾			3	mV/µs
Positive temperature gradient in standby⁽³⁾	No limitation for negative temperature gradient, or outside standby mode		5	°C/s
CONTROL INPUT AC CHARACTERISTICS⁽²⁾
RESET_N low duration		1		µs

(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see Figure 7-1) must be used to ensure compliance with this slew rate.

(2) T_A = –40°C to 85°C, V_DDS = 1.7 V to 3.8 V, unless otherwise noted.

(3) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see Section 5.15).

5.26 Switching Characteristics

Measured on the TI CC2650EM-5XD reference design with T_c = 25°C, V_DDS = 3.0 V, unless otherwise noted.

PARAMETER	TYP	UNIT
WAKEUP AND TIMING
Idle → Active	14	µs
Standby → Active	151	µs
Shutdown → Active	1015	µs

5.27 Typical Characteristics

Figure 5-4 BLE Sensitivity vs Temperature

Figure 5-6 BLE Sensitivity vs Channel Frequency

Figure 5-8 TX Output Power vs Supply Voltage (VDDS)

Figure 5-10 TX Current Consumption
vs Supply Voltage (VDDS)

Figure 5-12 RX Mode Current Consumption vs Temperature

Figure 5-14 Active Mode (MCU Running, No Peripherals)
Current Consumption vs Temperature

Figure 5-16 Standby Mode Current Consumption With RCOSC RTC vs Temperature

Figure 5-18 SoC ADC Output vs Supply Voltage (Fixed Input, Internal Reference, No Scaling)

Figure 5-20 SoC ADC ENOB vs Sampling Frequency
(Input Frequency = FS / 10)

Figure 5-5 BLE Sensitivity vs Supply Voltage (VDDS)

Figure 5-7 TX Output Power vs Temperature

Figure 5-9 TX Output Power
vs Channel Frequency

Figure 5-11 RX Mode Current vs Supply Voltage (VDDS)

Figure 5-13 TX Mode Current Consumption vs Temperature

Figure 5-15 Active Mode (MCU Running, No Peripherals) Current Consumption vs Supply Voltage (VDDS)

Figure 5-17 SoC ADC Effective Number of Bits vs Input Frequency (Internal Reference, No Scaling)

Figure 5-19 SoC ADC Output vs Temperature (Fixed Input, Internal Reference, No Scaling)

Figure 5-21 Standby Mode Supply Current vs Temperature

Figure 5-22 SoC ADC DNL vs ADC Code (Internal Reference, No Scaling)

Figure 5-23 SoC ADC INL vs ADC Code (Internal Reference, No Scaling)